GaN Talk a blog dedicated to crushing silicon
Term: 電力変換
3 post(s) found

Aug 03, 2022

CEO Corner – Alex Lidow Dispels the Myth that GaN Devices Cost More than Silicon

Alex Lidow, Ph.D., CEO and Co-founder

Back in 2015 Venture Beat published an article on gallium nitride chips taking over from silicon.  In that article I made the assertion that widespread adoption of gallium nitride-based power semiconductors would be possible because GaN FETs would have higher performance AND lower cost than silicon.  Yet, there is still a widespread misconception that GaN has not yet reached that milestone…that is a false myth.  In this blog post, I will attempt to dispel this myth with the caveat that this discussion is limited to devices rated at less than 400 V, as that is the application focus for EPC’s FET and IC products.

It has been more than 12 years since the first GaN-on-Si power transistors started in volume production, and in many applications, such as lidar and space electronics, adoption has been extremely rapid.  But what about other markets such as consumer products, computers, motor drives, and automotive?  Even in each of those areas GaN devices have started to appear in volume as the predicted tipping point of better performance AND lower cost is a reality.

May 10, 2021

Intelligent Power Amplifier Module based on GaN FETs

EPC Guest Blogger,

Guest GaN Talk Blog by: Pavel Gurev, Sinftech Rus LLC

This article originally appeared in Bodo’s Power Systems April 2021

In the past few years, gallium-nitride (GaN) FETs have become more widespread in power electronics. Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very high-power densities exceeding 100 W / cm3 and more. The efficiency of converters based on GaN transistors can reach 99.5%. Due to the extension of the conversion frequency towards the MHz range, the magnetic components (chokes, transformers) also decrease in size significantly. However, designers face numerous challenges in implementing practical GaN transistor designs. The best family members are presented in wafer-level chip-scale package; the drivers are also quite miniature.

Sep 22, 2020

New 100 V eGaN Devices Increase Benchmark Performance Over the Aging Silicon Power MOSFET

Alex Lidow, Ph.D., CEO and Co-founder

Efficient Power Conversion (EPC) is increasing the performance distance between the aging silicon power MOSFET and eGaN transistors with 100 V ratings.  The new fifth-generation “plus” devices have about 20% lower RDS(on) and increased DC ratings compared with the prior fifth-generation products.  This performance boost comes from the addition of a thick metal layer and a conversion from solder balls to solder bars.