GaN Talk a blog dedicated to crushing silicon
Term: GaN
52 post(s) found

Mar 04, 2022

Efficient Motor Drive Performance at Low Cost for e-bikes, Drones, and Robotics with GaN FETs

Marco Palma, Director of Motor Drives Systems and Applications

Mobility is a driving factor in all economies. Electro mobility (or e-Mobility) is a clean and impactful way of keeping the gears of commerce grinding without contributing to the environmental stresses of inefficient motors or fossil fuel burning engines that cause damage to our planet. There is an ever-increasing demand for highly efficient and compact motor drive designs. EPC’s GaN-based motor drive reference designs for eMobility applications are in development to jump-start the competitive and environmentally friendly alternatives that support this trend.

Feb 11, 2022

The 48 V/12 V Automotive Evaluation Power Modules (EPC9137, EPC9163, EPC9165) Utilize the Two-Phase Synchronous Buck/Boost Topology

Yuanzhe Zhang, Director, Applications Engineering at EPC

The 48 V/12 V automotive evaluation power modules (EPC9137, EPC9163, EPC9165, etc) utilize the two-phase synchronous buck/boost topology. The edge connectors and controller card are also designed to operate two modules in parallel with one controller, effectively achieving four-phase and therefore double the rated current and power. An example using EPC9137 modules are shown in Figure 1.

Sep 14, 2021

Motor Drives Showdown – GaN vs. Silicon

Marco Palma, Director of Motor Drives Systems and Applications

This GaN Talk blog discusses the advantages of using GaN-based inverters instead of silicon-based inverters for motor drive designs to operate smoother while reducing size and weight. These advantages are critical for motor drives used in typical applications such as warehousing & logistical robots, servo drives, e-bikes & e-scooters,  collaborative and low voltage robots and medical robotics, industrial drones, and automotive motors.

Omdia forecasts that worldwide shipments of warehousing and logistics robots will grow rapidly over the next 5 years from 194,000 units in 2018 to 938,000 units annually by 2022, with the rate of growth slowing after 2021 as many major players will have adopted robotic systems by then.  Worldwide revenue for this category will increase from $8.3 billion in 2018 to $30.8 billion in 2022, providing significant opportunities for established participants and emerging players.

Jul 29, 2021

High-Quality, Low-Cost Audio Achieved with GaN

Renee Yawger, Director of Marketing

Until recently, to achieve high-quality sound from an audio amplifier cost thousands of dollars and relied on a large, heavy, power-hungry class-A amplifier. Now, the advent of gallium nitride FETs and ICs is ushering the age of high quality, lower cost class-D audio amplifiers. 

Distortion Performance Issues Lowered with GaN

Historically, meeting the required distortion performance targets (THD+N, TIM and IM) for high-quality audio, class-D amplifiers had to resort to incorporating large amounts of feedback circuitry to compensate for poor open-loop performance. The source of this distortion was the silicon power MOSFET.

May 10, 2021

Intelligent Power Amplifier Module based on GaN FETs

EPC Guest Blogger,

Guest GaN Talk Blog by: Pavel Gurev, Sinftech Rus LLC

This article originally appeared in Bodo’s Power Systems April 2021

In the past few years, gallium-nitride (GaN) FETs have become more widespread in power electronics. Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very high-power densities exceeding 100 W / cm3 and more. The efficiency of converters based on GaN transistors can reach 99.5%. Due to the extension of the conversion frequency towards the MHz range, the magnetic components (chokes, transformers) also decrease in size significantly. However, designers face numerous challenges in implementing practical GaN transistor designs. The best family members are presented in wafer-level chip-scale package; the drivers are also quite miniature.

Mar 22, 2021

eToF™ Laser Driver ICs for Advanced Autonomy Lidar

John Glaser , Ph.D., Director of Applications

Co-written by Steve Colino

Laser drivers for light distancing and ranging (lidar) are used in a pulsed-power mode. What are the basic requirements for these laser drivers?

A new family of integrated laser driver ICs meets all these requirements.  The first release, the EPC21601 laser driver IC, integrates a 40 V, 10 A FET with integrated gate driver and 3.3 V logic level input in a single chip for time-of-flight (ToF) lidar systems used in robotics, surveillance systems, drones, autonomous cars, and vacuum cleaners. This chip offers frequency capability up to 200 MHz in a low inductance, economical, 1 mm x 1.5 mm BGA package.

Mar 03, 2021

Why GaN for DC-DC Space Designs

David Reusch, Ph.D., Principal Scientist, VPT

Power electronics engineers are constantly working towards designs with higher efficiency and higher power density while maintaining high reliability and minimizing cost. Advances in design techniques and improved component technologies enable engineers to consistently achieve these goals. Power semiconductors are at the heart of these designs and their improvements are vital to better performance. In this EPC space blog, we will demonstrate how GaN power semiconductors allow for innovation in the harsh radiation environments of space applications.

GaN power semiconductors offer designers in the high reliability market a sudden and significant improvement in electrical performance over their silicon power MOSFET predecessors. Table 1 compares radiation hardened GaN and Si power semiconductor device characteristics important for circuit designers to increase efficiency and power density in their converter.

Feb 09, 2021

How GaN is Revolutionizing Motor Drive Applications

Marco Palma, Director of Motor Drives Systems and Applications

Rethinking the Ordinary and Overcoming Mental Biases

Motor drive applications span several markets: industrial, appliance, and automotive. A commonality that occurs regardless of market is that when a new technology is proposed, it faces resistance to its adoption; after all, it is human nature to stick with what is known and resist change.

Sep 22, 2020

New 100 V eGaN Devices Increase Benchmark Performance Over the Aging Silicon Power MOSFET

Alex Lidow, Ph.D., CEO and Co-founder

Efficient Power Conversion (EPC) is increasing the performance distance between the aging silicon power MOSFET and eGaN transistors with 100 V ratings.  The new fifth-generation “plus” devices have about 20% lower RDS(on) and increased DC ratings compared with the prior fifth-generation products.  This performance boost comes from the addition of a thick metal layer and a conversion from solder balls to solder bars.

Jun 28, 2020

Why GaN in Space?

Alex Lidow, Ph.D., CEO and Co-founder

Packaged SEE Immune and Radiation Hardened enhancement mode gallium nitride (eGaN) devices offer dramatically improved performance over the aging Rad Hard silicon MOSFET, enabling a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before.