GaN Talk a blog dedicated to crushing silicon
Term: Performance
2 post(s) found

Feb 22, 2024

Why you shouldn’t use Rds(on) to select and compare devices in switching power converters

Andrea Gorgerino, Director of Global Field Application Engineering

Learn why RDS(ON) shouldn't be your main criteria for selecting switching devices. EPC's insights reveal a more effective approach for evaluating GaN FETs.

Aug 21, 2020

New 200 V eGaN Devices Double the Performance Edge Over the Aging Silicon Power MOSFET.

Alex Lidow, Ph.D., CEO and Co-founder

Efficient Power Conversion (EPC) is doubling the performance distance between the aging silicon power MOSFET and eGaN® transistors with 200 V ratings.  The new fifth-generation devices are about half the size of the prior generation.  This performance boost comes from two main design differences, as shown in figure 1.  On the left is a cross-section of the fourth generation 200 V enhancement-mode GaN-on-Si process.  The cross-section on the right is the fifth-generation structure with reduced distance between gate and source electrodes and an added thick metal layer. These improvements, plus many others not shown, have doubled the performance of the new-generation FETs.