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Written by Peter Clarke - 3/7/2012 2:20 PM EST
LONDON - The market for power devices implemented in gallium nitride was less than $2.5 million in 2011, according to market research firm Yole Developpement (Lyon, France). However, there is a great deal of R&D activity and Yole sees the power GaN market growing to nearly $0 million in 2012 and $500 million in 2016.
International Rectifier Corp. (El Segundo, Calif.) and Efficient Power Conversion Corp. (El Segundo, Calif.) are likely to remain the two main vendors of GaN power devices in early 2012 and the annual market is likely to ...
Alex Lidow, the co-inventor of the HEXFET power MOSFET and CEO of Efficient Power Conversion (EPC), discusses the market adoption of Enhancement Mode Gallium Nitride Transistors (eGAN FETs) due to their tremendous size and performance advantages over silicon power MOSFETs, eGaN's “disruptive” technological impact on power semiconductor markets and potential applications, and EPC’s upcoming introduction of eGaN power devices for high voltage AC/DC converters and high power motor control applications.