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Can Gallium Nitride Replace Silicon?

For the past three decades, Silicon-based power management efficiency and cost have shown steady improvement. In the last few years, however, the rate of improvement has slowed as the Silicon power MOSFET has asymptotically approached its theoretical bounds. Gallium Nitride grown on top of a silicon substrate could displace Silicon across a significant portion of the power management market. By Alex Lidow, PhD Power Electronics Europe Issue 2, 2010 Read the article 続きを読む
分類: 記事

Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9002 development board

EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9002 development board to make it easier for users to get started designing with EPC’s 100V enhancement-mode GaN transistor products. The EPC9002 development board is a 50 V maximum input voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC1001 100V GaN Power Transistor. The purpose of this development board is to simplify the evaluation process of the EPC1001 GaN power transistor by including all the critical ... 続きを読む
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