EPC9084: 350 V, 4 Aのハーフブリッジ開発基板


The EPC9084 development board is a 350 V maximum device voltage, 4 A maximum output current, half bridge development board. The EPC9084 board measures 2” x 2” and contains a 350 V EPC2050 enhancement mode (eGaN®) field effect transistor (FET) with the Silicon Labs SI8274GB1 gate driver.

To simplify the evaluation process of the EPC2050 GaN FET, all the critical components are included on a single board that can be easily connected into any existing converter.

This board may be used for applications where high efficiency can enable a significant performance advantage as well as a size and weight reduction such as multi-level AC/DC power supplies, electric vehicle on-board charging, and solar power inverters.

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EPC9084 Parameters Table
1) Maximum input voltage depends on inductive loading, maximum switch node ringing must be kept under 350 V for EPC2050.
(2) Maximum current depends on die temperature – actual maximum current with be subject to switching frequency, bus voltage and thermal cooling.
(3) Limited by time needed to ‘refresh’ high side bootstrap supply voltage.