GaNの話シリコンを粉砕するために捧げたブログ
Term: 信頼性
10 post(s) found

驚異的な新技術、GaNベースのパワー・システム・ソリューションに関するユーザーの声

驚異的な新技術、GaNベースのパワー・システム・ソリューションに関するユーザーの声
7 24 2018

エンハンスメント・モードGaNパワー・デバイス(eGaN® FETとIC)は、ユーザーが最終製品を差異化するための道を拓きます。この新技術は、小型機器や電子機器に給電するために、常に存在する電源回路や電力分配回路の効率を大幅に向上させます。

アメリカのセールス・マネージャとして、私は、優れた新しいビジョンを創り出すためにユーザーと協力するという羨ましがられる立場に立っており、彼らは、引き続き市場をリードし、エネルギー消費を削減して消費電力を最適化することに貢献しています。

新しい技術やアプローチを導入するパワー・システムの設計は常に、好奇心と評価で満ちています。ユーザーは常に、新技術の属性と実装に関して、最も根本的で遠大な質問をします。 したがって、私が受けた最も一般的な質問を文書化することは、GaN技術の使用がこの過渡的な技術を、自信を持って採用するための道を開くと考えている人の助けになるだろうと考えました。

チップスケールのeGaN FETを使った製造可能で信頼性の高いプリント回路基板の設計

チップスケールのeGaN FETを使った製造可能で信頼性の高いプリント回路基板の設計
9 07 2017

Michael de RooijとAlana Nakataの共著、Efficient Power Conversion

以下で発表しました:PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of

ランド・グリッド・アレイ(LGA)、および/またはボール・グリッド・アレイ(BGA)の形態として、従来とは異なるチップスケール・パッケージ(CSP)に収めたeGaN FETは、さまざまなアプリケーションにわたって同等のMOSFETよりも電力密度と効率特性が高いというデモを繰り返し示されています [1,2]。これらの特性改善は、不要な寄生要素を最小限に抑える適切なレイアウト方法が広範にわたって文書化されています[1,3]。eGaN FETが市場に初めて投入されて以来7年間、フィールドで実際に使われた合計170億時間以上で、合計127個のデバイスの不具合がありました。そのうちの75個は、アセンブリ技術が不十分だったか、プリント回路基板の設計がうまくなかったことによるものでした [4]。設計者は、製造しやすさに影響するプリント回路基板の設計ルールにもっと精通しなければなりません。MOSFETに比べて、比較的サイズが小さいために許容度があまり大きくありません。この論文では、eGaN FETの性能を最大限に引き出すためのプリント回路基板設計のさまざまなガイドラインと、いまだに既存のプリント回路基板の製造能力に依存する信頼性について説明します。

eGaN Technology Reliability and Physics of Failure – How eGaN FETs are expected to behave as the result of high gate voltage stress conditions

eGaN Technology Reliability and Physics of Failure – How eGaN FETs are expected to behave as the result of high gate voltage stress conditions
2 03 2017

The previous installment in this series focused on the physics of failure surrounding thermo-mechanical reliability of EPC eGaN® wafer level chip-scale packages. A fundamental understanding of the potential failure modes under voltage bias is also important. This installment will provide an overview of the physics of failure associated with voltage bias at the gate electrode of gallium nitride (GaN) field effect transistors (FETs). Here we look at the case of taking the gate control voltage to the specified limit and beyond to investigate how eGaN FETs behave over a projected lifetime.

eGaN Technology Reliability and Physics of Failure - Thermo-mechanical board level reliability of eGaN devices

eGaN Technology Reliability and Physics of Failure - Thermo-mechanical board level reliability of eGaN devices
1 13 2017

The first three installments in this series covered field reliability experience and stress test qualification of Efficient Power Conversion (EPC) Corporation’s enhancement-mode gallium nitride (eGaN®) field effect transistors (FETs) and integrated circuits (ICs).  Excellent field reliability that was documented is the result of applying stress tests covering the intended operating conditions the devices will experience within applications.  Of equal importance is understanding the underlying physics of how eGaN® devices will fail when stressed beyond intended operating conditions (e.g. datasheet parameters and safe operating area).  This installment will take a deeper dive into the physics of failure centered around thermo-mechanical reliability of eGaN® wafer level chip-scale packages (WLCSP).

eGaN Technology Reliability and Physics of Failure - eGaN Stress Test Qualification and Capability

eGaN Technology Reliability and Physics of Failure - eGaN Stress Test Qualification and Capability
8 20 2016

The first two installments in this series reported in detail on field reliability experience of Efficient Power Conversion (EPC) Corporation’s enhancement-mode gallium nitride (eGaN®) FETs and integrated circuits (ICs). The excellent field reliability of eGaN® devices demonstrates stress-based qualification testing is capable of ensuring reliability in customer applications. In this installment we will examine the stress tests that EPC devices are subjected to prior to being considered qualified products.

eGaN Technology Reliability and Physics of Failure - Examining eGaN Field Reliability

eGaN Technology Reliability and Physics of Failure - Examining eGaN Field Reliability
7 18 2016

Efficient Power Conversion (EPC) Corporation’s enhancement-mode gallium nitride (eGaN®) FETs and integrated circuits (ICs) are finding their way into many end user applications such as LIDAR, wireless charging, DC-DC conversion, RF base station transmission, satellite systems, and audio amplifiers.

eGaN Technology Reliability and Physics of Failure

eGaN Technology Reliability and Physics of Failure
7 12 2016

Efficient Power Conversion (EPC) Corporation’s enhancement-mode gallium nitride (eGaN®) FETs continue to expand into new market applications due to the competitive performance advantages over traditional power MOSFETs. Wireless power, DC-DC conversion, RF base station transmission, satellite systems, audio amplifiers, and LiDAR are just a few example applications that can take advantage of the superior performance of eGaN FETs.

Emerging Applications in Medical Care Using GaN Technology

Emerging Applications in Medical Care Using GaN Technology
6 28 2016

The contribution that gallium nitride semiconductor technology is making in medical applications can be measured not only in dollars saved, but also more importantly in its contribution to the speed of intervention, diagnostic accuracy and patient comfort. Because of its superior performance and small size, GaN components (FETs and ICs) are enabling end applications such as wireless power charging, higher resolution diagnostics, and precision surgical robotics. These applications are improving ways health care is being provided.

Six Reasons to Rethink Power Semiconductor Packaging

Six Reasons to Rethink Power Semiconductor Packaging
6 08 2016

In my 40 years’ experience in power semiconductors I have visited thousands of customers, big and small, on every continent except Antarctica. When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

  1. Can you make the package smaller?
  2. Can you reduce the package inductance?
  3. Can you make the product with lower conduction losses?
  4. Can you make the package more thermally efficient?
  5. Can you sell the product at a lower price?
  6. Can you make the package more reliable?

eGaN® FETs and integrated circuits from EPC have taken a very different approach to packaging power semiconductors – we have ditched the package altogether!

Revisiting What It Takes for a New Semiconductor Technology to be Disruptive

Revisiting What It Takes for a New Semiconductor Technology to be Disruptive
6 02 2016

In March 2010 Efficient Power Conversion (EPC) proudly launched our GaN technology at the CIPS conference in Nuremberg, Germany.  Parts and development kits were readily available off-the shelf and therefore designers could immediately get started with a new state-of-the-art semiconductor technology.

At that time, we listed four key attributes we believed a new semiconductor technology needed in order to be really disruptive to the end markets.  A lot has happened in the six years since.  GaN has continued to ascend as the presumptive replacement for the aging power MOSFET, yet there are still a few design engineers and technical managers that remain skeptical.  So let’s look again at these four key attributes and see where GaN stands in addressing them.