GaNの話シリコンを粉砕するために捧げたブログ
Term: 窒化ガリウム
20 post(s) found

Intellectual Power Amplifier Module based on GaN FETs

Intellectual Power Amplifier Module based on GaN FETs
5 10 2021

Guest GaN Talk Blog by: Pavel Gurev, Sinftech Rus LLC

This article originally appeared in Bodo’s Power Systems April 2021

In the past few years, gallium-nitride (GaN) FETs have become more widespread in power electronics. Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very high-power densities exceeding 100 W / cm3 and more. The efficiency of converters based on GaN transistors can reach 99.5%. Due to the extension of the conversion frequency towards the MHz range, the magnetic components (chokes, transformers) also decrease in size significantly. However, designers face numerous challenges in implementing practical GaN transistor designs. The best family members are presented in wafer-level chip-scale package; the drivers are also quite miniature.

eToF™ Laser Driver ICs for Advanced Autonomy Lidar

eToF™ Laser Driver ICs for Advanced Autonomy Lidar
3 22 2021

Co-written by Steve Colino

Laser drivers for light distancing and ranging (lidar) are used in a pulsed-power mode. What are the basic requirements for these laser drivers?

A new family of integrated laser driver ICs meets all these requirements.  The first release, the EPC21601 laser driver IC, integrates a 40 V, 10 A FET with integrated gate driver and 3.3 V logic level input in a single chip for time-of-flight (ToF) lidar systems used in robotics, surveillance systems, drones, autonomous cars, and vacuum cleaners. This chip offers frequency capability up to 200 MHz in a low inductance, economical, 1 mm x 1.5 mm BGA package.

Why GaN for DC-DC Space Designs

Why GaN for DC-DC Space Designs
3 03 2021

Power electronics engineers are constantly working towards designs with higher efficiency and higher power density while maintaining high reliability and minimizing cost. Advances in design techniques and improved component technologies enable engineers to consistently achieve these goals. Power semiconductors are at the heart of these designs and their improvements are vital to better performance. In this EPC space blog, we will demonstrate how GaN power semiconductors allow for innovation in the harsh radiation environments of space applications.

GaN power semiconductors offer designers in the high reliability market a sudden and significant improvement in electrical performance over their silicon power MOSFET predecessors. Table 1 compares radiation hardened GaN and Si power semiconductor device characteristics important for circuit designers to increase efficiency and power density in their converter.

How GaN is Revolutionizing Motor Drive Applications

How GaN is Revolutionizing Motor Drive Applications
2 09 2021

Rethinking the Ordinary and Overcoming Mental Biases

Motor drive applications span several markets: industrial, appliance, and automotive. A commonality that occurs regardless of market is that when a new technology is proposed, it faces resistance to its adoption; after all, it is human nature to stick with what is known and resist change.

Reduce Audible Noise in Motor Drive Designs Using eGaN FETs and ICs

Reduce Audible Noise in Motor Drive Designs Using eGaN FETs and ICs
1 15 2021

Brushless DC (BLDC) motors are popular and finding increasing application in robotics, e-mobility, and drones. Such applications have special requirements such as lightweight, small size, low torque ripple, low audible noise, and extreme precision control.  To address these needs, the inverters powering the motors need to operate at higher frequency but require advanced techniques to reduce the resultant higher power loss. Enhancement-mode gallium nitride (eGaN ®) transistors and integrated circuits offer the ability to operate at much higher frequencies without incurring significant losses. 

200 VのeGaN® FETを使って、高効率、2.5 kW、汎用入力電圧範囲、力率補正(PFC)の400 Vの整流器を設計する方法

200 VのeGaN<sup>®</sup> FETを使って、高効率、2.5 kW、汎用入力電圧範囲、力率補正(PFC)の400 Vの整流器を設計する方法
11 03 2020

謝辞:このアプリケーション・ノートと関連ハードウエアは、米テキサス大学オースティン校のSemiconductor Power Electronics Center(SPEC)と共同で開発されました。

動機

クラウド・コンピューティング、ウエアラブル、機械学習、自動運転、すべてのモノがインターネットにつながるIoTなどのアプリケーションの拡大によって、データ集約型の世界へと私たちを駆り立て、データセンターと電力消費に対する需要が増大しています [1,2]。交流から直流へのスイッチング電源の効率、電力密度、コストの重要性は、eGaN FETが超高効率力率補正(PFC)のフロントエンド整流器ソリューションを可能にして解決できる革新的なソリューションを牽引し、これに焦点を当てたアプリケーション・ノートHow2AppNoteもあります。

効率95%で48 V入力、1 V / 10 A出力のVRMハイブリッド・コンバータ

効率95%で48 V入力、1 V / 10 A出力のVRMハイブリッド・コンバータ
10 07 2018
Gab-Su Seo1,2、Ratul Das1、and Hanh-Phuc Le1
1米コロラド大学のDepartment of Electrical, Computer, and Energy Engineering
2米国コロラドの国立再生可能エネルギー研究所のPower Systems Engineering Center

クラウド・コンピューティングやビッグデータ処理への需要が劇的に増加していることから、米国のデータセンターの電力消費量は、2020年までに730億kWhに達すると予測されています [1]。これは、米国全体の電力消費量の約10%を占めます。この消費の大部分は、非効率な電力供給アーキテクチャによる損失によって引き起こされ、改善のために大きな注意を払わなければなりません [2],[3]。

チップスケールのeGaN FETを使った製造可能で信頼性の高いプリント回路基板の設計

チップスケールのeGaN FETを使った製造可能で信頼性の高いプリント回路基板の設計
9 07 2017

Michael de RooijとAlana Nakataの共著、Efficient Power Conversion

以下で発表しました:PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of

ランド・グリッド・アレイ(LGA)、および/またはボール・グリッド・アレイ(BGA)の形態として、従来とは異なるチップスケール・パッケージ(CSP)に収めたeGaN FETは、さまざまなアプリケーションにわたって同等のMOSFETよりも電力密度と効率特性が高いというデモを繰り返し示されています [1,2]。これらの特性改善は、不要な寄生要素を最小限に抑える適切なレイアウト方法が広範にわたって文書化されています[1,3]。eGaN FETが市場に初めて投入されて以来7年間、フィールドで実際に使われた合計170億時間以上で、合計127個のデバイスの不具合がありました。そのうちの75個は、アセンブリ技術が不十分だったか、プリント回路基板の設計がうまくなかったことによるものでした [4]。設計者は、製造しやすさに影響するプリント回路基板の設計ルールにもっと精通しなければなりません。MOSFETに比べて、比較的サイズが小さいために許容度があまり大きくありません。この論文では、eGaN FETの性能を最大限に引き出すためのプリント回路基板設計のさまざまなガイドラインと、いまだに既存のプリント回路基板の製造能力に依存する信頼性について説明します。

Four Ways GaN Technology Helps Save the Planet

Four Ways GaN Technology Helps Save the Planet
4 11 2017

Gallium nitride (GaN) is a better semiconductor than silicon. There are many crystals that are better than silicon, but the problem has always been that they are far too expensive to be used in every application where silicon is used. But, GaN can be grown as an inexpensive thin layer on top of a standard silicon wafer enabling devices that are faster, smaller, more efficient, and less costly than their aging silicon counterparts.

How we devised a wirelessly powered television set

How we devised a wirelessly powered television set
3 09 2017

Televisions can get their content wirelessly, but there is one set of wires they still need: those in their power cord. The consumer electronics industry has floated ideas for freeing TVs from their power cords, but this goal remains elusive. There are several reasons, such as the difficultly of meeting high-power requirements for large-screen TVs and the need for identifying an economical technology. Nevertheless, eGaN FETs could play a role in making TVs truly cordless devices.