GaNの話シリコンを粉砕するために捧げたブログ
Term: 衛星
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Why GaN for DC-DC Space Designs

Why GaN for DC-DC Space Designs
3 03 2021

Power electronics engineers are constantly working towards designs with higher efficiency and higher power density while maintaining high reliability and minimizing cost. Advances in design techniques and improved component technologies enable engineers to consistently achieve these goals. Power semiconductors are at the heart of these designs and their improvements are vital to better performance. In this EPC space blog, we will demonstrate how GaN power semiconductors allow for innovation in the harsh radiation environments of space applications.

GaN power semiconductors offer designers in the high reliability market a sudden and significant improvement in electrical performance over their silicon power MOSFET predecessors. Table 1 compares radiation hardened GaN and Si power semiconductor device characteristics important for circuit designers to increase efficiency and power density in their converter.

なぜ宇宙にGaNなのか?

なぜ宇宙にGaNなのか?
6 28 2020

SEE耐性や耐放射線特性を強化し、パッケージ化されたエンハンスメント・モード窒化ガリウム(eGaN)・デバイスは、成熟した耐放射線シリコンMOSFETに比べて、性能が劇的に改善され、これまでにない高周波、高効率、高電力密度で動作する宇宙における新世代のパワー・コンバータを可能にします。