ニュース

新製品発表、アプリケーション関連情報など、EPCからの最新ニュースと最新情報を得るために、今、登録してください。 EPCからの電子メール配信に登録する

eGaN® FET-Silicon Power Shoot-Out Part 10: High Frequency Resonant Converters

The advantages provided by eGaN FETs in hard switching isolated and non-isolated applications have been addressed previously. Here, we demonstrate the ability of the eGaN FET to improve efficiency and output power density in a soft switching application, compared to what is achievable with existing power MOSFET devices.

By David Reusch, Ph.D., Director of Applications, EPC
Power Electronics Technology

Read the article