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Accelerated development of eGaN FETs as silicon MOSFET come to the end of the road
Posted 2012年4月9日
With eGaN® FETs' high-performance capabilities, we have seen rapid adoption in applications for efficient DC/DC conversion, POL converters, Class D audio amplifier and high frequency circuits. Texas Instruments’ introduction of the industry's first 100V, half-bridge GaN FET driver (LM5113), optimized for use with enhancement-mode GaN (eGaN) field-effect transistors (FETs),has further propelled such an accelerated adoption pace in applications like high-performance telecom power supplies, networking and datacom centers.
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EDN China April 2012 Print Issue
EDN China April 2012