MOSFET、IGBT可以休矣，即将成为过去，在这个250亿美元的市场取而代之的将是GaN功率器件——这是EPC首席执行官Alex Lidow日前在接受EDN China专访时的说法。Lidow博士之前在IR担任了12年CEO，在2007年他创立了宜普电源转换公司（Efficient Power Conversion Corporation，EPC），他在斯坦福大学的博士论文就是关于HEXFET功率MOSFET的，是相关专利的发明者之一。在HEXFET专利过期之前，相关版税已超过9亿美元。

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The weather was perfect in Chi-town at the Darnell Power Forum but the technologies were hot including a talk by Alex Lidow CEO of Efficient Power Conversion Corp., who discussed why the power industry should consider GaN for improving performance.

By Paul O’Shea
EEBEAT
September 14, 2010

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The recent introduction of enhancement mode GaN transistors (eGaN™) as power MOSFET/ IGBT replacements in power management applications enables many new products that promise to add great system value. In general, an eGaN transistor behaves much like a power MOSFET with a quantum leap in performance, but to extract all of the newly-available eGaN transistor performance requires designers to understand the differences in drive requirements.

By Johan Strydom and Alex Lidow
September, 2010

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