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先行している代表的なGaNパワー・メーカー（EPC社、米トランスフォーム社、カナダGaN Systems社、独インフィニオン社、米Navitas社）は、主流の量産アプリケーションに技術を移行させるときに重要な開発の詳細を発表しました。この5社の講演で発表された情報に基づいて、GaNパワー・デバイスの採用が劇的に拡大すると期待される3つの大きな理由があります。
Bodo’s Power Systems誌
2016年6月1日
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過去数年間、確立したシリコンMOSFETの座を奪う窒化ガリウム（GaN）ベースのパワー・トランジスタに関する話がたくさんありました。新たに出現した窒化ガリウム・オン・シリコン（GaNオン・シリコン）・ベースのパワーFETが、主流の電力変換の領域に参入するまでに、いくらかの時間がかかるかもしれません。しかし、その間に、新たに出現した用途のうちの一握りは、この有望なパワー技術の背中をポンと押す態勢を整えています。信頼性が高く商業的に利用可能なことに加えて、これらの新しい用途を育てているユニークなGaNの特性がいくつかあります。
Ashok Bindra
米How2Power Today誌
2012年12月
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With eGaN® FETs' high-performance capabilities, we have seen rapid adoption in applications for efficient DC/DC conversion, POL converters, Class D audio amplifier and high frequency circuits. Texas Instruments’ introduction of the industry's first 100V, half-bridge GaN FET driver (LM5113), optimized for use with enhancement-mode GaN (eGaN) field-effect transistors (FETs),has further propelled such an accelerated adoption pace in applications like high-performance telecom power supplies, networking and datacom centers.
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EDN China April 2012 Print Issue
EDN China April 2012
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Wide-bandgap materials, such as GaN and SiC, are enabling a new generation of power switching devices that switch faster and with fewer losses than the venerable silicon MOSFET, resulting in smaller, more efficient power supplies.
By Margery Conner
EDN
August 25, 2011
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We know Efficient Power Conversion (EPC) has commercialized enhancement-mode GaN-on-Si FETs, or eGaN FETs as EPC calls them, for more than a year now. Concurrently, it has been working with partners to realize dedicated drivers for its eGaN FETs, which offer lower RDS(ON) at higher voltages, lower gate charge, and no reverse recovery loss (QRR)—all these properties from a smaller die size than silicon. In essence, by comparison to silicon MOSFETs, the eGaN FETs offer a dramatic reduction in figures of merit or FOM.
By Ashok Bindra
How2Power
June, 2011
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GaN (Gallium-Nitride) FETs appear poised to eat into silicon FETs market share as switching devices for high-voltage power conversion circuits.
By Margery Conner
EDN
June 20, 2011
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The weather was perfect in Chi-town at the Darnell Power Forum but the technologies were hot including a talk by Alex Lidow CEO of Efficient Power Conversion Corp., who discussed why the power industry should consider GaN for improving performance.
By Paul O’Shea
EEBEAT
September 14, 2010
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A startup led by chip veteran Alex Lidow has officially announced its formation, disclosed its supply-chain partners and unveiled its first products in the emerging gallium nitride (GaN) arena.
By Mark LaPedus
EE Times
March 8, 2010
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The enhancement mode -normally OFF- GaN technology was explicitly developed to replace power MOSFETs. Says Alex Lidow, EPC’s co-founder and CEO, enhancement mode - rather than depletion mode - is essential for GaN to become a broad-scale silicon power MOSFET replacement.
By Margery Conner
EDN
March 5, 2010
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A breakthrough in processing gallium nitride (GaN) on a silicon substrate has produced enhancement-mode FETs with high conductivity and hyperfast switching. Its cost structure and fundamental operating mechanism are similar to silicon-only MOSFET alternate.
Article By Sam Davis, Editor in Chief
Power Electronics Technology
March 1, 2010
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