The Little Box Challenge presented by Google and the IEEE Power Electronics Society is an open competition to build a (much) smaller power inverter, with a $1,000,000 prize. eGaN® FETs are ideal for this type of application due to their small size, high power handling capability, and ultra fast switching speeds.

Why GaN?

  • Higher Switching Frequency – Capacitance and inductance impede switching speed. eGaN FETs’ small size and lateral structure give ultra low capacitance while the Land Grid Array (LGA) package gives low inductance enabling unprecedented switching performance in terms of speed, voltage overshoot and ringing. Zero QRR also reduces losses at high frequency.
  • Lower Losses - eGaN FET’s switching performance enables higher power density, higher frequency, higher switching precision, higher bus voltage, and less voltage overhead.
  • Smaller – GaN is a wide bandgap device with superior conductivity compared to traditional silicon transistors resulting in smaller devices and lower capacitance for the same RDS(on).

How GaN?

  • Concept for multi-level inverter
    • Multi-level inverter using EPC2010, 200 V eGaN FETs
    • Inverter efficiency estimated at 98% at 150 kHz

  • Application Note - eGaN® FETs for Photo-Voltaic Inverter Applications
  • How to GaN Seminar - The "How to GaN" educational series is designed to accelerate your learning curve for gallium nitride technology. Theory and real world application of high performance GaN power transistors are explored.
  • Assembly Resources - EPC’s eGaN FETs are in a chipscale Land Grind Array (LGA) package. This format reduces board space, stray inductance, and parasitic resistance. These resources discuss how to reliably mount these LGA packages on to a printed circuit board.
  • Discounted Samples - We are happy to offer a special discount on the 200 V eGaN FET devices presented in our application note.