EPC9004C : 200 V Half-Bridge Development Board
The EPC9004C development board has a 200 V maximum device voltage, 2 A maximum output current, in a half-bridge topology with onboard gate drives, featuring the EPC2012C enhancement-mode (eGaN®) field effect transistor (FET)
The purpose of this development board is to simplify the evaluation process of the EPC2012C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.
Status: Obsolete
Fully assembled reference design developed for testing and performance validation only, not available for sale.
For additional assistance, please contact a GaN Expert.