EPC9001 - Development Board

EPC Development Board

VDS(max), 40 V
ID(max RMS), 15 A
Half Bridge Plus Driver

The EPC9001 development board is 2” x 1.5” and contains not only two EPC2015 eGaN FET in a half bridge configuration using Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

Status: Obsolete
The GaN Experts recommend EPC90132 for new designs
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