VDS(max), 200 V
ID(max RMS), 5 A
Half Bridge Plus Driver
The EPC9003 development board is 2” x 1.5” and contains not only two EPC2010 eGaN FET in a half bridge configuration using Texas Instruments LM5114 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.
The GaN Experts recommend EPC90124 for new designs