EPC90135: 80 V, 45 A GaN-based half-bridge development board

EPC90135: 80 V, 45 A Parallel Evaluation for High Current Applications EPC2218

EPC90135 Development Board

The EPC90135 development board with onboard gate driver, features the 100 V rated EPC2218 eGaN® FET. The purpose of this board is to simplify the evaluation process of paralleled EPC2218’s for high current operation by including all the critical components on a single board that can be easily integrated into most existing converter topologies.

The EPC90135 development board measures 2” x 2” and contains eight EPC2218 GaN FETs in four half bridge configurations. The EPC90135 features the uPI Semiconductor uP1966E gate driver. The board contains all critical components, and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

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