EPC90150: 200 V, 20 A Half-Bridge Development
Board Featuring EPC2307
The EPC90150 is a half-bridge development board with onboard gate drive featuring the 200 V rated EPC2307 eGaN®FET. The purpose of this development board is to simplify the evaluation process of the EPC2307 by including all the critical components on a single board that can be easily connected into most existing converter topologies.
The EPC90150 development board is 2” x 2” and contains two EPC2307 GaN FETs in a half bridge configuration with the On-Semi NCP51820 gate driver. The board also contains all critical components and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.