EPC9047 - Development Board

EPC9047 : 150 V Half-Bridge Development Board

The EPC9047 development board is a 150 V maximum device voltage, 12 A maximum output current, half bridge with onboard gate drives, featuring the EPC2033 enhancement mode (eGaN^®) field effect transistor (FET).

The purpose of this development board is to simplify the evaluation process of the EPC2033 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

Status: Obsolete
The GaN Experts recommend EPC9098 for new designs

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Waveforms for operation as a 110 V to 5 V/ 12 A (100kHz) buck converter
CH1: V_PWM Input voltage – CH2: (I_OUT) Switch node current – CH4: (V_OUT) Switch node voltage

(1) Maximum input voltage depends on inductive loading, maximum switch node ringing must be kept under 150 V for EPC2033.
(2) Maximum current depends on die temperature – actual maximum current is affected by switching frequency, bus voltage and thermal cooling.
(3) When using the on board logic buffers, refer to the NCP51820 datasheet when bypassing the logic buffers.
(4) Limited by time needed to ‘refresh’ high side bootstrap supply voltage.

EPC9047 - Development Board

EPC9047 : 150 V Half-Bridge Development Board

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