EPC9055 : 100 V Half-Bridge Development Board
The EPC9055 development board is a 100 V maximum device voltage, 3 A maximum output current, in a half-bridge topology with onboard gate drives, featuring the EPC2106 enhancement mode (eGaN®) field effect transistor (FET).
The purpose of this development board is to simplify the evaluation process of the EPC2106 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.