EPC2066: 40 V, 639 A Enhancement Mode GaN Power Transistor

VDS, 40 V
RDS(on), 1.1 mΩ
ID, 90 A
Pulsed ID, 639 A

EPC2066 Enhancement Mode GaN Power Transistor
Die Size: 6.05 mm x 2.3 mm


  • High density DC-DC conversion
  • BLDC motor drives
  • Industrial automation
  • Point-of-load converters
  • Synchronous rectification
  • Inrush protection


  • Ultra-high efficiency
  • High switching frequency
  • Very low RDS(on), QG, QGD, QOSS and zero reverse recovery (QRR)
  • Small footprint
Status: Preferred
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