Gallium nitride (GaN) transistors and integrated circuits (ICs) offer fundamental advantages over silicon. GaN-based solutions exceed the performance capabilities of silicon in speed, temperature, and power handling. These improvements offer greater efficiency, significantly reduced size and weight, reduced cost, and improved thermal performance.
For more information on EPC’s GaN technology, download our Technology Brief
0 V - 40 V
41 V - 100 V
101 V - 350 V
Use our interactive parametric selection tool to identify the best possible eGaN® solution for your power conversion system.
For guidance on assembly techniques click here for more information.