48 V = GaN

48 V = GaN

更高效、更小型化、成本更低

GaN is redefining power conversion…eGaN® FETs and ICs increase the efficiency, shrink the size, and reduce system cost for 48 V power conversion.

The EPC2152 power stage operating at 1 MHz (blue line) has an overall power loss (including inductor and control IC) at 10 A that is 50% lower than the best Si MOSFET solution (black X) when operated with 48 VIN and 12 VOUT. The green line shows the comparative performance when the power stage is fabricated with discrete GaN FETs driven by a silicon IC.

宜普電源轉換公司(EPC)為業界提供最廣泛的氮化鎵元件系列,從15 V至350 V、從低於1 A至590 A。
詳情請參看EPC產品系列。

EPC2152 More Efficient, Smaller, Lower Cost

樣品申請:產品型號EPC2152(最多5個)

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