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Design Higher Resolution Lidar Systems with New Automotive-Qualified GaN FET for Advanced Autonomy from EPC

Design Higher Resolution Lidar Systems with New Automotive-Qualified GaN FET for Advanced Autonomy from EPC

EPC introduces the 80 V, AEC-Q101-qualified EPC2252 GaN FET, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive-grade lidar, 48 V – 12 V DC-DC conversion, and low inductance motor drives.

EL SEGUNDO, Calif. — January 2023 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of the 80 V, 11 mΩ EPC2252 that delivers 75 A pulsed current in a 1.5 mm x 1.5 mm footprint. The EPC2252 offers power system designers significantly smaller and more efficient devices than silicon MOSFETs for automotive-grade lidar found in autonomous driving and other ADAS applications, 48  V – 12 V DC-DC conversion, and low inductance motor drives.

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新型80 V、15 A eToF™雷射驅動器GaN IC 可實現更高功率密度和更具成本效益的光達系統設計

新型80 V、15 A eToF™雷射驅動器GaN IC 可實現更高功率密度和更具成本效益的光達系統設計

宜普電源轉換公司(EPC)推出新型氮化鎵積體電路EPC21701,這是一款 80 V雷射驅動器IC,可提供15 A脉衝電流,適用於飛行時間(ToF)光達應用,包括真空吸塵器、機器人、3D安全攝像頭和 3D感測器。

EPC 宣佈推出EPC21701,這是一款單晶片雷射驅動器,包含80 V、40 A FET、閘極驅動器和3.3邏輯電平輸入,用於飛行時間光達系統,包括用於機器人、監控系統和真空吸塵器。 它專為用於手勢識別、飛行時間 (ToF)測量、機器人視覺或工業安全的光達系統量身定制。

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分類: 新聞稿

立錡科技與宜普電源轉換携手推出小型化、140 W快充解决方案

立錡科技與宜普電源轉換携手推出小型化、140 W快充解决方案

宜普電源轉換公司(EPC)和立錡科技(Richtek)携手推出新型快充參考設計,使用RT6190降壓-升壓控制器和氮化鎵場效應電晶體EPC2204,可實現超過98%的效率。

宜普電源轉換公司和立錡科技宣佈推出4開關雙向降壓-升壓控制器參考設計,可將12 V~24 V的輸入電壓轉換爲5 V~20 V的穩壓輸出電壓,並提供高達5 A的連續電流和6.5 A的最大電流。與高功率密度應用的傳統解決方案相比,新型RT6190控制器與EPC的超高效氮化鎵場效應電晶體EPC2204相結合,使得解決方案尺寸可縮小20%以上,而且在20 V和12 V輸出電壓下,可實現超過98%的效率。在不需使用散熱器和5 A連續電流下,20 V轉5 V的最大升溫低於攝氏15度,而12 V轉20 V的最高升溫則低於·攝氏55度。

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Richtek and EPC team up to create small 140-watt fast-charging solution

Richtek and EPC team up to create small 140-watt fast-charging solution

Richtek, the global leading analog IC design company has teamed up with EPC, the leading provider of gallium nitride (GaN)-based power management technology to launch a new reference design for fast charging applications, achieving high power density and up to 98% efficiency.

DigiTimes
January, 2023
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分類: 技術文章

GaN’s Evolution from Science Project to Mainstream Power Conductor

GaN’s Evolution from Science Project to Mainstream Power Conductor

Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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分類: 技術文章

Lowest On-resistance 150 V and 200 V Transistors on the Market Now Shipping from GaN Leader EPC

Lowest On-resistance 150 V and 200 V Transistors on the Market Now Shipping from GaN Leader EPC

Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

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分類: 新聞稿

eBook: The Next Silicon Frontier

eBook: The Next Silicon Frontier

Despite the continued progress in traditional transistor scaling, the semiconductor industry has reached an inflection point. The demand for faster, smaller, smarter, and more energy-efficient chips calls for new design and manufacturing paradigms. This eBook includes contributions from technology and market experts Malcolm Penn, Future Horizons; Tim Burgess and Bernd Westhoff, Renesas Electronics; Jean-Christophe Eloy, Yole Group; Luc Van den hove, imec; Ezgi Dogmus, Poshun Chiu, and Taha Ayari, Yole Intelligence; Alex Lidow, Efficient Power Conversion; Victor Veliadis, PowerAmerica; Richard Collins and Yu-Han Chang, IDTechEx; and Jean-René Lèquepeys, CEA-Leti.

EETimes
December, 2022
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分類: 技術文章

eGaN FETs Enable More Than 4-kW/in3 Power Density for 48 V to 12 V Power Conversion

eGaN FETs Enable More Than 4-kW/in3 Power Density for 48 V to 12 V Power Conversion

Growing computational power and miniaturization of electronics in computing and data centers is increasingly putting pressure on 48-V power delivery and conversion systems. High-efficiency and high-power–density converters enable a reduction in power losses at the system level while allowing smaller form factors. In this context, LLC resonant topologies combined with GaN technology succeed to deliver outstanding performance, as it has been demonstrated with multiple examples. This article will show the key design parameters and components to achieve beyond 4 kW/in3 of power density in a 48-V to 12-V LLC converter using eGaN® FETs.

Power Electronics News
December, 2022
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分類: 技術文章

New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving.

EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.

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分類: 新聞稿

宜普電源轉換公司與世界先進公司宣布合作生產八吋氮化鎵晶圓

宜普電源轉換公司與世界先進公司宣布合作生產八吋氮化鎵晶圓

宜普電源轉換公司(EPC) 與世界先進積體電路股份有限公司(VIS) 攜手合作生產八吋氮化鎵晶圓,透過VIS高品質的製造能力,進一步强化EPC在氮化鎵功率轉換市場的領導地位。

發佈單位:宜普電源轉換公司、世界先進公司

發佈日期:111年12月6日

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GaN-Based Low-Voltage Inverter for Electric Scooter Drive System

GaN-Based Low-Voltage Inverter for Electric Scooter Drive System

This paper deals with the application of the latest generation low voltage (up to 80 V) Gallium Nitride (GaN) devices for motor drive applications in the field of electric micro-mobility. A two-level inverter topology oriented to light electric traction (such as electric scooters) with a power rate of 1500 W has been considered. An experimental board using two GaN FETs in parallel connection for each switch of an inverter leg has been arranged. The intrinsic parameters spread of the device, as well as the leakage inductances of both the circuit and the PCB, to evaluate the impact on the current share during both the transient phase and in the steady state have been investigated. In the paper, several simulation runs have been carried out and described. Furthermore, the inverter experimental board has been used to evaluate the phase voltages and currents at different load conditions. Finally, the temperature limits versus phase current variation have been evaluated.

IEEE 2022 AEIT International Annual Conference (AEIT)
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Note: This site requires IEEE membership to access full paper.

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分類: 技術文章

Podcast: GaN Devices for Space Applications

Podcast: GaN Devices for Space Applications

GaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. The electrical and thermal performance of GaN has also demonstrated superior operation in a space environment. In this podcast, Bel Lazar, Chief Executive Officer of EPC Space, will analyze the importance of GaN for the space industry. In addition to his role as CEO of EPC Space, Bel currently serves as COO of Efficient Power Conversion (EPC).

EETimes
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EPC Launches a New Generation of eGaN Technology that Doubles Performance

EPC Launches a New Generation of eGaN Technology that Doubles Performance

Efficient Power Conversion (EPC) introduces the 80 V, 4 mOhm EPC2619 GaN FET in tiny 1.5 mm x 2.5 mm footprint, offering higher performance and smaller solution size than traditional MOSFETs for high power density applications, including DC-DC conversion, motor drives, and synchronous rectification for 12 V – 20 V.

EL SEGUNDO, Calif.— November 2022 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products.

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The True Cost of Global Energy

The True Cost of Global Energy

EPC’s mission is to make GaN power devices that are higher performance and lower cost compared to silicon. GaN devices increase power density, improve efficiency and enable new applications and with the rising cost of energy globally, it is no surprise that the adoption rate of our GaN devices is accelerating dramatically.

Bodo’s Power Systems
November, 2022
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分類: 技術文章

Podcast: GaN and Silicon Carbide | Meeting New Efficiency Standards in The Green Revolution

Podcast: GaN and Silicon Carbide | Meeting New Efficiency Standards in The Green Revolution

As energy efficiency standards increase, high-voltage Silicon Carbide and low-voltage GaN are replacing traditional silicon, enabling cooler, lighter, and more powerful electronics. Join Guy Moxey and Alex Lidow, EPC CEO and Co-founder, and explore how Wolfspeed and EPC technologies complement one another in the race towards a more sustainable future.

Wolfspeed
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分類: 訪問文稿

Solarnative Uses GaN Devices to Solve the Challenge of Solar Power Installation with its New Microinverter that Integrates into the Module Frame

Solarnative Uses GaN Devices to Solve the Challenge of Solar Power Installation with its New Microinverter that Integrates into the Module Frame

GaN FETs help Solarnative achieve industry-leading power density for solar microinverters, enabling module frame integration to solve the challenges of solar power installation.

EL SEGUNDO, Calif.— November 2022 Solarnative uses GaN devices in its new microinverter to achieve industry-best power density.  The Power Stick is the smallest inverter in the world, with dimensions of 23.9 by 23,2 by 404 millimeters. With an AC output power of 350 W, the volume of 0.19 liters corresponds to a power density of 1.6 kW per liter. By comparison, the IQ 7A microinverter from a market leading supplier delivers 349 watts with a volume of 1.12 liters, corresponding to 0.31 kW per liter – not even one-fifth of the Solarnative device. Despite the extreme size reduction, the European efficiencies are quite comparable, at 96.0 percent for the Power Stick and 96.5 percent for the IQ 7A.

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