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Data center power in 2019

Data center power in 2019
It is expected that there will be more than 175 zettabytes of data by 2025. Data center construction and deployment, as well as upgrading efforts in existing older ones, is booming with the advent of 5G, starting in earnest at the 2020 Olympics in Japan (6G is already being discussed for future development) and the growth of artificial intelligence (AI) and machine learning (ML). It makes so much sense to me that GaN should be the power transistor of choice in Data Center power architectures where size, efficiency and speed are critical. In all the topologies with 48 VIN, the highest ... 閱讀全文
分類: 技術文章

EPC及Spirit Electronics提供eGaN功率元件的資料包

EPC及Spirit Electronics提供eGaN功率元件的資料包

EPC及Spirit Electronics公司攜手為客戶提供領導業界的氮化鎵功率元件的特定製造批次的資料服務。

宜普電源轉換公司(EPC)宣佈與Spirit Electronics公司攜手為客戶提供一系列氮化鎵功率元件的特定批次的數據。

宜普公司首席執行長及共同創辦人Alex Lidow說:「Spirit Electronics具備與國防及宇航客戶的豐富合作經驗,我們攜手為嚴峻應用環境所需,為客戶增值而提供氮化鎵(eGaN)功率半導體的特定批次的資料包。」

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氮化鎵正面攻擊矽功率MOSFET元件

氮化鎵正面攻擊矽功率MOSFET元件

目前的氮化鎵場效應電晶體在尺寸及性能方面以飛快的速度發展,而目前為業界樹立基準的氮化鎵元件的性能還可以提升多300倍。

最早採用氮化鎵元件的應用是利用氮化鎵的超快速開關速度,例如面向全自動駕駛車輛和無人機的雷射雷達系統、機械人,以及4G/LTE基站。氮化鎵元件的產量一直在增加,而其價格跟開關速度更慢、尺寸更大型和日益陳舊的MOSFET元件相約。因此,目前正是氮化鎵元件正面攻擊MOSET的時候!。

Bodo’s Power Systems
2019年6月
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分類: 技術文章

宜普電源轉換公司提供氮化鎵(eGaN)功率元件的晶圓

宜普電源轉換公司提供氮化鎵(eGaN)功率元件的晶圓

為了使得客戶易於集成功率系統,宜普電源轉換公司(EPC)為客戶提供領導業界的氮化鎵功率元件的晶圓。

EPC公司宣佈推出領導業界的增強型氮化鎵元件的晶圓,使得客戶易於集成功率系統。EPC公司的氮化鎵場效應電晶體(eGaN® FET)及積體電路一直以來都是以單個並包含錫條或錫球的晶片級元件出售。

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Efficient Power Conversion (EPC) CEO and Co-Founder Inducted into the ISPSD Hall of Fame 2019

Efficient Power Conversion (EPC) CEO and Co-Founder Inducted into the ISPSD Hall of Fame 2019
EPC proudly announces the induction of Dr. Alex Lidow, CEO and co-founder into the ISPSD Hall of Fame 2019 El Segundo, Calif. – May 2019 – Efficient Power Conversion (EPC) Corporation proudly announces that Dr. Alex Lidow, CEO and co-founder, is inducted into the ISPSD Hall of Fame 2019. This prestigious honor is bestowed upon an honored contributor to advancing power semiconductor technology and sustaining the success of ISPSD. This Hall of Fame award was announced on May 20th, 2019 at 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2019 at ... 閱讀全文
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jjPlus Showcasing Next Generation Wireless Power and WiFi Solutions at Computex 2019

jjPlus Showcasing Next Generation Wireless Power and WiFi Solutions at Computex 2019

Unleash the full potential of your solutions with jjPlus wireless technologies!

TAIPEI, Taiwan, May 21, 2019 — jjPLus Corp. a Taiwan design manufacturer of high quality wireless communications and wireless power embedded solutions, will showcase the next generation Wireless Power Transfer as well as new WiFi solutions at COMPUTEX 2019 in Nangang Exhibition Center, Hall 1, at K1024 booth during May 28 - June 1 in Taipei, Taiwan..

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Thermal design for a high density GaN-based power stage

Thermal design for a high density GaN-based power stage
eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters. EDN Read article 閱讀全文
分類: 技術文章

The Amazing New World of Gallium Nitride

The Amazing New World of Gallium Nitride
From the heart of Silicon Valley comes a new buzzword. Gallium nitride is the future of power technology. Tech blogs are touting gallium nitride as the silicon of the future, and you are savvy enough to get in on the ground floor. Knowing how important gallium nitride is makes you a smarter, better consumer. You are at the forefront of your peer group because you know of an up and coming technology, and this one goes by the name of gallium nitride. HACKADAY Read article 閱讀全文
分類: 技術文章

EPC: Ahead of the Pack

EPC: Ahead of the Pack

EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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PCIM Europe – where power is at the core of innovation

PCIM Europe – where power is at the core of innovation
This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe. Showing the potential that GaN has already realised, Efficient Power Conversion (EPC) had a stand that was well-stocked with examples of the eGaN FET technology that the company introduced in 2009. Electronic Specifier Read article 閱讀全文
分類: 技術文章

EPC於歐洲PCIM展會展示基於eGaN技術、面向汽車、運算及其他多種應用、具高功率密度的高效DC/DC功率轉換

EPC於歐洲PCIM展會展示基於eGaN技術、面向汽車、運算及其他多種應用、具高功率密度的高效DC/DC功率轉換

宜普電源轉換公司(EPC)將於歐洲PCIM展會現場演示優越的氮化鎵技術如何提升多種應用所需的電源供電效率,包括運算、通信及運輸行業。

EPC團隊將於5月7日至9日在德國的Nuremberg、歐洲PCIM展覽及研討會的會場,進行7場關於氮化鎵(GaN)技術及應用的演講,並於7號展館、335展覽攤位與工程師會面並分享最新的、基於eGaN® FET及積體電路的終端客戶產品。

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車規級80 V EPC2214 eGaN FET使得雷射雷達系統看得更清晰

車規級80 V EPC2214 eGaN FET使得雷射雷達系統看得更清晰

宜普電源轉換公司(EPC)進一步擴大車規級氮化鎵產品系列 -- 全新成員是面向具有高解析度的雷射雷達系統、80 V的EPC2214氮化鎵場效應電晶體,該元件成功通過國際汽車電子協會所制定的AEC Q101應力測試認證。

宜普電源轉換公司(EPC)宣佈再多一個車用氮化鎵(eGaN)元件(80 V的EPC2214)成功通過AEC Q101測試認證,可在車用及其他嚴峻環境支持多種全新應用。

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氮化鎵技術可以提升面向伺服器及汽車應用的48 V DC/DC 功率轉換的效率

氮化鎵技術可以提升面向伺服器及汽車應用的48 V DC/DC 功率轉換的效率

宜普電源轉換公司(EPC)推出兩個全新100 V氮化鎵元件,可以支援伺服器及汽車應用的48 V轉換的要求。 我將在處理器、車用及能量存儲系統等方面探討48 V伺服器的功率轉換解決方案(可參考我的文章 “雙向DC/DC電源供電: 我們應該如何取向?”),未來將在EDN文章中看到。氮化鎵功率電晶體必需是這些不同架構的一部份 -- 我相信沒有其他更優越的元件可以替代氮化鎵元件了 。

Planet Analog
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EPC partners with Würth Elektronik eiSos to present Trilogy of Wireless Power Transfer

EPC partners with Würth Elektronik eiSos to present Trilogy of Wireless Power Transfer
The "Trilogy of Wireless Power Transfer" consists of three parts: Basics Principles of Wireless Power Transmission, Wireless Power Transfer Systems and Applications. The first part of the book explains the basic physical principles and the different methods of contactless power transmission. Furthermore, the leading standards are presented in this part. The second part describes wireless power transfer systems, the different topologies of wireless power transmission, the right selection of transmitter and receiver coils required to increase efficiency, and the selection of transistors, for ... 閱讀全文
分類: 技術文章

Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion

Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion
EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion. EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) ... 閱讀全文
分類: 新聞稿

宜普電源轉換公司(EPC)推出面向48 V DC/DC電源轉換、馬達控制及雷射雷達應用的100 V氮化鎵(eGaN)功率電晶體

宜普電源轉換公司(EPC)推出面向48 V DC/DC電源轉換、馬達控制及雷射雷達應用的100 V氮化鎵(eGaN)功率電晶體

專為功率系統設計師而設的EPC2052功率電晶體是一種100 V、13.5 mΩ並採用超小型晶片級封裝的電晶體,可實現74 A脈衝輸出電流。面向48 V-12 V DC/DC功率轉換器,這些新一代氮化鎵場效應電晶體工作在500 kHz頻率下,可實現超過97%的效率。如果工作在1 MHz時,則實現超過96%的效率。

宜普電源轉換公司(EPC)宣佈推出100 V的EPC2052氮化鎵場效應電晶體,其占板面積只是2.25平方毫米、最大導通阻抗(RDS(on))為13.5 mΩ及脈衝輸出電流高達74 A 以支援高效功率轉換。

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It's Time to Rethink Power Semiconductor Packaging

It's Time to Rethink Power Semiconductor Packaging

When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

1. Can you make the package smaller?
2. Can you reduce the package inductance?
3. Can you make the product with lower conduction losses?
4. Can you make the package more thermally efficient?
5. Can you sell the product at a lower price?
6. Can you make the package more reliable?

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分類: 技術文章
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