新聞

客戶可以在我們的網頁 註冊 ,定期收取最新消息包括全新產品發佈、應用文章及更多其它資訊。如果你錯過了已發佈的消息,你可瀏覽以下的文檔。

GaN ePower™ Ultrafast Switch with Integrated Gate Driver for Indirect Time-of-Flight Laser Drivers

分類: 技術文章
GaN ePower™ Ultrafast Switch with Integrated Gate Driver for Indirect Time-of-Flight Laser Drivers

Gallium nitride FETs have continued to gain traction in many power electronic applications, but GaN technology is still in the early part of its life cycle. While there is much room to improve basic FET performance figures of merit an even more promising avenue is the development of GaN power ICs.

Bodo’s Power Systems
November, 2020
Read article