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EPC新推80 V和200 V eGaN FET,擴大其高性能eGaN系列的產品陣容

EPC新推80 V和200 V eGaN FET,擴大其高性能eGaN系列的產品陣容

這些新一代氮化鎵場效應電晶體(eGaN FET) 滿足了目前電動出行(eMobility)、交付和物流機器人,以及無人機市場所需的緊凑型 BLDC 電機驅動器和具成本效益、高解析度的飛行時間(ToF)的新需求。

宜普電源轉換公司(EPC)是增强型矽基氮化鎵 (eGaN) 功率電晶體和積體電路的全球領導者。新推的EPC2065 和 EPC2054具備更高的性能和更低的成本等優勢。

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Efficient Power Conversion (EPC) Announces New Family of Radiation-Hardened Enhancement-Mode Gallium Nitride (eGaN) Transistors and Integrated Circuits for Demanding Space Applications

Efficient Power Conversion (EPC) Announces New Family of Radiation-Hardened Enhancement-Mode Gallium Nitride (eGaN) Transistors and Integrated Circuits for Demanding Space Applications

Efficient Power Conversion (EPC) introduces a new family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments.

EL SEGUNDO, Calif.— June 2021 — EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.

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EPC公司將在2021年APEC虛擬會議暨博覽會上,展示在多種應用中 使用eGaN FET和積體電路的高功率密度解决方案

EPC公司將在2021年APEC虛擬會議暨博覽會上,展示在多種應用中 使用eGaN FET和積體電路的高功率密度解决方案

宜普電源轉換公司(EPC) 的氮化鎵專家將在APEC展示最新的增强型氮化鎵場效應電晶體和積體電路的發展,並探討氮化鎵技術的卓越性能如何改變了具高功率密度的運算、車用、電動運輸和機器人等應用的電源供電。

EPC團隊將在6月14日至17 日舉行的APEC虛擬會議暨博覽會上,進行多個關於氮化鎵 (GaN) 技術和應用的技術演示和網絡研討會,並且提供相關的教育教程。此外,EPC公司也參加了此次活動的虛擬展覽,展示出其客戶的終端產品中採用了最新的 eGaN FET和積體電路,從而推動了氮化鎵(eGaN)技術的普及。

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EPC推出超高功率密度1226 W/in3、1 kW的48 V/12 V LLC轉換器

EPC推出超高功率密度1226 W/in3、1 kW的48 V/12 V LLC轉換器

宜普電源轉換公司(EPC)宣佈推出新型EPC9149演示板。該板爲一款可提供1 kW功率的48 V输入、12 V输出的LLC轉換器,可作爲直流變壓器,轉換比爲4:1。EPC9149採用額定電壓爲100 V的EPC2218氮化鎵場效應電晶體(eGaN FET)和額定電壓爲40 V的EPC2024

EPC9149的尺寸是根據DOSA標準的1/8磚型,僅爲58.4 mm x 22.9 mm。輸出功率是1 kW時,EPC9149比基於硅元件的解決方案要小得多,後者的尺寸通常是1/4磚或大兩倍。不帶散熱器的轉換器的總厚度僅爲10 mm。爲了讓工程師能够輕鬆地複製這個设计,該電路板的所有設計資源,包括原理圖、物料清單和Gerber文件,都可以在EPC網站上找到。

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EPC推出由氮化鎵場效應電晶體驅動且可擴展的 1.5 kW 48 V/12 V DC/DC演示板,為輕混電動車和電池備用裝置提供 更高效、更小、更快的雙向轉換器

EPC推出由氮化鎵場效應電晶體驅動且可擴展的 1.5 kW 48 V/12 V DC/DC演示板,為輕混電動車和電池備用裝置提供 更高效、更小、更快的雙向轉換器

EPC9137是一款兩相是48 V/12 V雙向轉換器,以小型化解决方案提供1.5 kW功率,效率爲97%,適用於輕混電動車和電池電源備用裝置。

宜普電源轉換公司(EPC)宣佈推出EPC9137,這是一款1.5 kW的兩相48 V/12 V雙向轉換器,占板面積小,效率爲97%。 該演示板的設計是可擴展的 – 並聯兩個轉換器可實現3 kW,或者並聯3個轉換器可實現4.5 kW。該板使用4個100 V的eGaN®FET(EPC2206),幷且由一個包括Microchip dsPIC33CK256MP503 16位數字控制器的模組控制。

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Product roundup: GaN power semiconductors gain traction

(Image: Yole)

Product roundup: GaN power semiconductors gain traction

Manufacturers of GaN power semiconductors showcased their latest products, from 100 V to 650-V devices at PCIM Europe. PCIM Europe showcased several presentations about the benefits and use cases of wide bandgap (WGG) semiconductors, including gallium nitride (GaN) and silicon carbide (SiC). Several manufacturers, including EPC, GaN Systems, Infineon, Nexperia, and STMicroelectronics announced several new families of GaN power semiconductors during the week.

Electronic Products
May, 2021
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EPC公司推出用於更高效、運行更安靜和尺寸更小的馬達 且基於氮化鎵集成功率級的400 W馬達控制器演示板

EPC公司推出用於更高效、運行更安靜和尺寸更小的馬達 且基於氮化鎵集成功率級的400 W馬達控制器演示板

EPC9146演示板展示EPC2152 ePower™功率級使能高性能且低成本的BLDC馬達, 從而實現具有更高的性能和更小型化的解決方案。

宜普電源轉換公司(EPC)宣佈推出400 W馬達控制器演示板(EPC9146),包含三個獨立控制的半橋電路,採用集成了閘極驅動器的單片式EPC2152ePower™功率級,其最大電壓為80 V和最大輸出電流為15 A(10 ARMS)。板的尺寸僅為81 mm x 75 mm,在輸出功率為400 W時,可實現超過98.4%的效率。

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於嚴峻情況下氮化鎵元件如何工作 – 將eGaN FET置於遠高於數據手冊的電壓和電流限值下工作

於嚴峻情況下氮化鎵元件如何工作 – 將eGaN FET置於遠高於數據手冊的電壓和電流限值下工作

最近,EPC公司對其氮化鎵場效應電晶體(eGaN FET)進行了一系列測試,把它置於超出數據手冊的限值下工作,從而量化和發表這些元件通過電壓和電流極端應力測試的結果。

Bodo’s Power Systems
2021年5月
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EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer Applications at PCIM Europe 2021 Digital Days

EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer Applications at PCIM Europe 2021 Digital Days

Efficient Power Conversion (EPC) will showcase the company’s latest enhancement-mode gallium nitride-based FETs and ICs demonstrating how GaN technology’s superior performance is transforming power delivery for automotive, computing, and robotics at the PCIM Europe 2021 Digital Days.

EL SEGUNDO, Calif.— April 2021 — The EPC team will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3 – 7. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN® technology.

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Using GaN FETs can be as simple as using Silicon FETs – an example in 48V systems

Using GaN FETs can be as simple as using Silicon FETs – an example in 48V systems

In this article, the author introduces a GaN FET compatible analog controller that yields a low bill-of-material count and give designers the ability to design a synchronous buck converter in the same simple way as using silicon FETs, and offers superior performance for 48 V power systems.

Power Electronics News
April, 2021
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面向電池供電的馬達控制應用並基於氮化鎵ePower功率級積體電路的逆變器

面向電池供電的馬達控制應用並基於氮化鎵ePower功率級積體電路的逆變器

氮化鎵電晶體和積體電路通過消除輸入濾波器中的電解電容,以提高馬達控制應用的功率密度。氮化鎵元件的卓越開關性能可消除死區時間且實現無與倫比的正弦電壓和電流波形,從而實現更平滑且沒有雜訊的操作。

Bodo’s Power Systems
2021年4月
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Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) announces that the EPC2152 ePower™ Stage IC has received the 2020 Elektra Award for Semiconductor Product of the Year (Analogue).

EL SEGUNDO, Calif.— March 2021 — EPC’s ePower™ stage, EPC2152 Integrated Circuit (IC), has been honored with an Elektra Award 2020 in the Semiconductor Product of the Year – Analogue category. The award presentation was announced on March 25th during a virtual awards ceremony hosted by Electronics Weekly. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation, and contribution to the global electronics industry. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.

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宜普電源轉換公司(EPC)擴大eToF 雷射驅動器IC系列, 助力擴增實境(AR)的發展

宜普電源轉換公司(EPC)擴大eToF 雷射驅動器IC系列, 助力擴增實境(AR)的發展

宜普電源轉換公司(EPC)宣佈擴大氮化鎵(GaN)積體電路(IC)系列,實現性能更高、更小巧且採用飛行時間(ToF)技術的雷射雷達應用,包括機器人、無人機、3D感測器,遊戲和自動駕駛汽車等應用。

宜普電源轉換公司(EPC)宣佈推出雷射驅動器IC(EPC21603),在單個晶片上集成了40 V、10 A 場效應電晶體、閘極驅動器和LVDS邏輯電平輸入,面向飛行時間(ToF)雷射雷達系統,用於機器人、無人機、擴增實境和遊戲等應用。

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氮化鎵(GaN)積體電路重新定義功率轉換

氮化鎵(GaN)積體電路重新定義功率轉換

氮化鎵技術發展迅速,在開發出多代全新離散元件後,具備更高效、更小尺寸和成本更低等優勢的新世代積體電路繼續崛起。氮化鎵積體電路讓產品可以更小型化、開關更快、更高效且更易於設計。

Power Systems Design
2021年3月 (第36-39頁)
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How GaN Integrated Circuits Are Redefining Power Conversion

How GaN Integrated Circuits Are Redefining Power Conversion

Gallium nitride (GaN) power devices have been in production for over 10 years and, beyond just performance and cost improvements, the most significant opportunity for GaN technology to impact the power conversion market comes from the intrinsic ability to integrate multiple devices on the same substrate. This capability will allow monolithic power systems to be designed on a single chip in a more straightforward, higher efficiency, and more cost-effective way.

Power Electronic News
March, 2021
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Lidar Demonstration Board Drives Lasers with Currents up to 220 A with Under 3-ns Pulses using eGaN FETs

Lidar Demonstration Board Drives Lasers with Currents up to 220 A with Under 3-ns Pulses using eGaN FETs

The ultra-fast transition EPC2034C eGaN® FETs used on the EPC9150 enables high current pulses up to 220 A and pulse widths under 3 ns, thus allowing a lidar system to see farther, faster, and better.

EL SEGUNDO, Calif.— March 2021 — Efficient Power Conversion  (EPC) announces the availability of the EPC9150, a 200 V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs provide power pulses to drive the laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET and in a small fraction of the area, energy, and cost. Thus, enhancing the overall performance, including accuracy, precision, and processing speed as well as the price of a lidar system.

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EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2219, 65 V gallium nitride transistor with integrated reverse gate clamp diode optimized for high resolution lidar systems.

EL SEGUNDO, Calif.— March 2021 — EPC announces successful AEC Q101 qualification of the 65 V EPC2219 designed for lidar systems in the automotive industry and other harsh environments. 

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