新聞

客戶可以在我們的網頁 註冊 ,定期收取最新消息包括全新產品發佈、應用文章及更多其它資訊。如果你錯過了已發佈的消息,你可瀏覽以下的文檔。

Efficient Power Conversion (EPC) Expands 40 V eGaN FET Product Line with Device Ideal for High Power Density Telecom, Netcom, and Computing Solutions

Efficient Power Conversion (EPC) Expands 40 V eGaN FET Product Line with Device Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC introduces the 40 V, 1.6 milliohm EPC2069 eGaN® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — September 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2069 (1.6 mΩ typical, 40 V) eGaN FET. 

閱讀全文
分類: 新聞稿

EPC新推80 V和200 V eGaN FET,擴大其高性能eGaN系列的產品陣容

EPC新推80 V和200 V eGaN FET,擴大其高性能eGaN系列的產品陣容

這些新一代氮化鎵場效應電晶體(eGaN FET) 滿足了目前電動出行(eMobility)、交付和物流機器人,以及無人機市場所需的緊凑型 BLDC 電機驅動器和具成本效益、高解析度的飛行時間(ToF)的新需求。

宜普電源轉換公司(EPC)是增强型矽基氮化鎵 (eGaN) 功率電晶體和積體電路的全球領導者。新推的EPC2065 和 EPC2054具備更高的性能和更低的成本等優勢。

閱讀全文
分類: 新聞稿

Efficient Power Conversion (EPC) Announces New Family of Radiation-Hardened Enhancement-Mode Gallium Nitride (eGaN) Transistors and Integrated Circuits for Demanding Space Applications

Efficient Power Conversion (EPC) Announces New Family of Radiation-Hardened Enhancement-Mode Gallium Nitride (eGaN) Transistors and Integrated Circuits for Demanding Space Applications

Efficient Power Conversion (EPC) introduces a new family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments.

EL SEGUNDO, Calif.— June 2021 — EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.

閱讀全文
分類: 新聞稿

EPC公司將在2021年APEC虛擬會議暨博覽會上,展示在多種應用中 使用eGaN FET和積體電路的高功率密度解决方案

EPC公司將在2021年APEC虛擬會議暨博覽會上,展示在多種應用中 使用eGaN FET和積體電路的高功率密度解决方案

宜普電源轉換公司(EPC) 的氮化鎵專家將在APEC展示最新的增强型氮化鎵場效應電晶體和積體電路的發展,並探討氮化鎵技術的卓越性能如何改變了具高功率密度的運算、車用、電動運輸和機器人等應用的電源供電。

EPC團隊將在6月14日至17 日舉行的APEC虛擬會議暨博覽會上,進行多個關於氮化鎵 (GaN) 技術和應用的技術演示和網絡研討會,並且提供相關的教育教程。此外,EPC公司也參加了此次活動的虛擬展覽,展示出其客戶的終端產品中採用了最新的 eGaN FET和積體電路,從而推動了氮化鎵(eGaN)技術的普及。

閱讀全文
分類: 新聞稿

EPC推出超高功率密度1226 W/in3、1 kW的48 V/12 V LLC轉換器

EPC推出超高功率密度1226 W/in3、1 kW的48 V/12 V LLC轉換器

宜普電源轉換公司(EPC)宣佈推出新型EPC9149演示板。該板爲一款可提供1 kW功率的48 V输入、12 V输出的LLC轉換器,可作爲直流變壓器,轉換比爲4:1。EPC9149採用額定電壓爲100 V的EPC2218氮化鎵場效應電晶體(eGaN FET)和額定電壓爲40 V的EPC2024

EPC9149的尺寸是根據DOSA標準的1/8磚型,僅爲58.4 mm x 22.9 mm。輸出功率是1 kW時,EPC9149比基於硅元件的解決方案要小得多,後者的尺寸通常是1/4磚或大兩倍。不帶散熱器的轉換器的總厚度僅爲10 mm。爲了讓工程師能够輕鬆地複製這個设计,該電路板的所有設計資源,包括原理圖、物料清單和Gerber文件,都可以在EPC網站上找到。

閱讀全文
分類: 新聞稿

EPC推出由氮化鎵場效應電晶體驅動且可擴展的 1.5 kW 48 V/12 V DC/DC演示板,為輕混電動車和電池備用裝置提供 更高效、更小、更快的雙向轉換器

EPC推出由氮化鎵場效應電晶體驅動且可擴展的 1.5 kW 48 V/12 V DC/DC演示板,為輕混電動車和電池備用裝置提供 更高效、更小、更快的雙向轉換器

EPC9137是一款兩相是48 V/12 V雙向轉換器,以小型化解决方案提供1.5 kW功率,效率爲97%,適用於輕混電動車和電池電源備用裝置。

宜普電源轉換公司(EPC)宣佈推出EPC9137,這是一款1.5 kW的兩相48 V/12 V雙向轉換器,占板面積小,效率爲97%。 該演示板的設計是可擴展的 – 並聯兩個轉換器可實現3 kW,或者並聯3個轉換器可實現4.5 kW。該板使用4個100 V的eGaN®FET(EPC2206),幷且由一個包括Microchip dsPIC33CK256MP503 16位數字控制器的模組控制。

閱讀全文
分類: 新聞稿

EPC公司推出用於更高效、運行更安靜和尺寸更小的馬達 且基於氮化鎵集成功率級的400 W馬達控制器演示板

EPC公司推出用於更高效、運行更安靜和尺寸更小的馬達 且基於氮化鎵集成功率級的400 W馬達控制器演示板

EPC9146演示板展示EPC2152 ePower™功率級使能高性能且低成本的BLDC馬達, 從而實現具有更高的性能和更小型化的解決方案。

宜普電源轉換公司(EPC)宣佈推出400 W馬達控制器演示板(EPC9146),包含三個獨立控制的半橋電路,採用集成了閘極驅動器的單片式EPC2152ePower™功率級,其最大電壓為80 V和最大輸出電流為15 A(10 ARMS)。板的尺寸僅為81 mm x 75 mm,在輸出功率為400 W時,可實現超過98.4%的效率。

閱讀全文
分類: 新聞稿

EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer Applications at PCIM Europe 2021 Digital Days

EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer Applications at PCIM Europe 2021 Digital Days

Efficient Power Conversion (EPC) will showcase the company’s latest enhancement-mode gallium nitride-based FETs and ICs demonstrating how GaN technology’s superior performance is transforming power delivery for automotive, computing, and robotics at the PCIM Europe 2021 Digital Days.

EL SEGUNDO, Calif.— April 2021 — The EPC team will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3 – 7. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN® technology.

閱讀全文
分類: 新聞稿

Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) announces that the EPC2152 ePower™ Stage IC has received the 2020 Elektra Award for Semiconductor Product of the Year (Analogue).

EL SEGUNDO, Calif.— March 2021 — EPC’s ePower™ stage, EPC2152 Integrated Circuit (IC), has been honored with an Elektra Award 2020 in the Semiconductor Product of the Year – Analogue category. The award presentation was announced on March 25th during a virtual awards ceremony hosted by Electronics Weekly. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation, and contribution to the global electronics industry. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.

閱讀全文
分類: 新聞稿

宜普電源轉換公司(EPC)擴大eToF 雷射驅動器IC系列, 助力擴增實境(AR)的發展

宜普電源轉換公司(EPC)擴大eToF 雷射驅動器IC系列, 助力擴增實境(AR)的發展

宜普電源轉換公司(EPC)宣佈擴大氮化鎵(GaN)積體電路(IC)系列,實現性能更高、更小巧且採用飛行時間(ToF)技術的雷射雷達應用,包括機器人、無人機、3D感測器,遊戲和自動駕駛汽車等應用。

宜普電源轉換公司(EPC)宣佈推出雷射驅動器IC(EPC21603),在單個晶片上集成了40 V、10 A 場效應電晶體、閘極驅動器和LVDS邏輯電平輸入,面向飛行時間(ToF)雷射雷達系統,用於機器人、無人機、擴增實境和遊戲等應用。

閱讀全文
分類: 新聞稿

Lidar Demonstration Board Drives Lasers with Currents up to 220 A with Under 3-ns Pulses using eGaN FETs

Lidar Demonstration Board Drives Lasers with Currents up to 220 A with Under 3-ns Pulses using eGaN FETs

The ultra-fast transition EPC2034C eGaN® FETs used on the EPC9150 enables high current pulses up to 220 A and pulse widths under 3 ns, thus allowing a lidar system to see farther, faster, and better.

EL SEGUNDO, Calif.— March 2021 — Efficient Power Conversion  (EPC) announces the availability of the EPC9150, a 200 V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs provide power pulses to drive the laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET and in a small fraction of the area, energy, and cost. Thus, enhancing the overall performance, including accuracy, precision, and processing speed as well as the price of a lidar system.

閱讀全文
分類: 新聞稿

EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2219, 65 V gallium nitride transistor with integrated reverse gate clamp diode optimized for high resolution lidar systems.

EL SEGUNDO, Calif.— March 2021 — EPC announces successful AEC Q101 qualification of the 65 V EPC2219 designed for lidar systems in the automotive industry and other harsh environments. 

閱讀全文
分類: 新聞稿

宜普電源轉換公司(EPC)eToF 雷射驅動器IC 助力革新光達系統設計

宜普電源轉換公司(EPC)eToF 雷射驅動器IC 助力革新光達系統設計

宜普電源轉換公司(EPC)推出氮化鎵(GaN)積體電路(IC)系列,實現性能更高、更小巧且採用飛行時間(ToF)技術的光達應用,包括機器人、無人機、3D感測器和自動駕駛車輛等應用。

宜普電源轉換公司(EPC)宣佈推出雷射驅動器IC(EPC21601),在單個晶片上集成了40 V、10 A 場效應電晶體、閘極驅動器和3.3 V邏輯電平輸入,面向採用飛時測距(ToF)技術的光達系統,用於機器人、監控保安系統、無人機、全自動駕駛車輛和吸塵器。

閱讀全文
分類: 新聞稿

EPC’s ePower Stage EPC2152 Integrated Circuit Named Finalist in Prestigious Elektra Awards

EPC’s ePower Stage EPC2152 Integrated Circuit Named Finalist in Prestigious Elektra Awards

EPC’s ePower™ Stage EPC2152 Integrated Circuit has been selected as a finalist in the Semiconductor Product of the Year – Analogue category, in this year’s Elektra Awards.  These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation and contribution to the global electronics industry.

Companies are invited to enter individual categories and must demonstrate how innovative their product is, how it addresses its intended application better than incumbent products and what additional applications or markets could be opened-up.  Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.  Due to the current COVID restrictions the Elektra Awards ceremony this year will be held virtually on 25th March and the winners announced during the event.

閱讀全文
分類: 新聞稿

GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller

GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller

The combination of the Renesas dual synchronous GaN buck controller and ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enables high power density and efficiency with the same BOM size and cost as silicon.

EL SEGUNDO, Calif.—  February, 2021 — EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from EPC to achieve greater than 95% efficiency for 48 V input to 12 V regulated output conversion at 25 A.  

閱讀全文
分類: 新聞稿

EPC Releases Physics-Based Models That Project eGaN Device Lifetime in New Reliability Report

EPC Releases Physics-Based Models That Project eGaN Device Lifetime in New Reliability Report

Efficient Power Conversion (EPC) publishes Phase-12 Reliability Report adding to the extensive knowledge found in their first eleven reports. With this report, EPC demonstrates field experience of 226 billion eGaN ® device hours and a robustness capability unmatched by silicon power devices.

EL SEGUNDO, Calif.— January 2021 — EPC announces its Phase-12 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. eGaN devices have been in volume production for more than eleven years and have demonstrated very high reliability in over 226 billion hours of operation, most of which are in vehicles, LTE base stations, and satellites, to name just a few applications with rigorous operating conditions.

閱讀全文
分類: 新聞稿

宜普電源轉換公司(EPC)於全數位國際消費電子展(CES) 展示基於氮化鎵技術的消費電子應用

宜普電源轉換公司(EPC)於全數位國際消費電子展(CES) 展示基於氮化鎵技術的消費電子應用

歡迎您與氮化鎵(GaN)技術專家一起在CES的EPC虛擬展臺中,探索基於更高效、更小尺寸和更低成本的氮化鎵場效應電晶體和積體電路的解決方案,如何增強消費電子產品的功能和性能。

宜普電源轉換公司(EPC)宣佈在1月11日至14日舉行的全數位國際消費電子展(CES)展示其eGaN®技術如何改變了消費電子應用的遊戲規則,並且提高產品性能,包括全自動駕駛車輛、電動交通運輸、無人機、機器人和48 V電源轉換等應用。

閱讀全文
分類: 新聞稿

Efficient Power Conversion (EPC) Launches 40 V eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

Efficient Power Conversion (EPC) Launches 40 V eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

EPC introduces the 40 V, 3 milliohm EPC2055 eGaN® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — December 2020 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. 

閱讀全文
分類: 新聞稿

Efficient Power Conversion (EPC) and BrightLoop Converters Combine Design Expertise to Produce Smaller, Lighter Converters for Performance eMotorsport Vehicles

Efficient Power Conversion (EPC) and BrightLoop Converters Combine Design Expertise to Produce Smaller, Lighter Converters for Performance eMotorsport Vehicles

EL SEGUNDO, Calif. — December 2020 — BrightLoop Converters has greatly reduced the size, cost and improved reliability of its latest BB SP DC-DC buck converters thanks to Efficient Power Conversion Corporation’s (EPC) EPC2029 enhancement-mode gallium nitride (eGaN®) FET transistors. By switching from silicon (Si) transistors to gallium nitride (GaN), BrightLoop was able to increase the switching frequency of their design from 200 kHz to 600 kHz, while keeping the same efficiency. This design change increased the power density of the solution by a factor of approximately two and this resulted in lower cost by enabling the implementation of a smaller enclosure.

EPC’s EPC2029 is an 80 V, 48 A eGaN® FET featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

閱讀全文
分類: 新聞稿
RSS
12345678910 Last