The ultimate aim of Artificial Intelligence is to provide machines the ability to operate autonomously. One such area which is projected to grow exponentially over the next decade is Autonomous Vehicles. With Artificial Intelligence coupled with the rapid advances in electronics and computer technology, the word driverless will soon take over the roads.

AI Time Journal
October, 2020
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離散式功率電晶體，無論它是矽基還是矽基氮化鎵，都進入了最後發展階段。 矽基氮化鎵積體電路可以在較小的佔板面積內實現更高的性能，並且顯著降低成本和減少所需的元件工程。 本文詳細闡析氮化鎵元件的崛起和矽基氮化鎵積體電路如何重新定義功率轉換。

Bodo’s Power Systems
2020年10月
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Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles, with the goal of demonstrating zero failures. By testing parts to the point of failure, an understanding of the amount of margin beyond the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.

Bodo’s Power Systems
September, 2020
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矽功率MOSFET未能跟上電力電子行業的發展變化，而效率、功率密度和更小的外型尺寸等因素是行業的主要需求。 矽MOSFET元件的性能已達到其理論極限，並且由於電路板的空間非常寶貴，因此功率系統設計人員必需找出替代方案。 氮化鎵（GaN）元件是一種高電子遷移率電晶體（HEMT），這種半導體正為新興應用不斷增值。

EETimes
2020年8月
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氮化鎵技术幫助業界實現從使用內燃機汽車改為電動及智慧汽車的轉變。

Power Systems Design
2020年7月/8月刊 – 第39頁
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In this inaugural episode, guests are Alex Lidow, CEO of Efficient Power Conversion Corp., and Dinesh Ramanathan, co-CEO of NexGen Power Systems. EPC and NexGen both have expertise with gallium nitride technology and GaN power devices. EETimes speaks with both about the technology and about the market for GaN power devices.

EETimes
August, 2020
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Gallium nitride (GaN) power devices have been in volume production since March 2010 and have established a remarkable field-reliability record. An automotive application using GaN power devices in high volume is lidar (light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discuss a novel testing mechanism developed by Efficient Power Conversion (EPC) to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

eeNews Europe
July 30, 2020
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就像生活要面對現實一樣，老年人離開舞臺而讓位給年輕人，矽元件也是需要向現實低頭。 隨著氮化鎵元件的問世和普及，正逐步淘汰舊有可靠的矽元件。 在過去的四十年中，隨著功率MOSFET元件的結構、技術和電路拓撲的創新與不斷增長的電力需求同步發展，電源管理的效率和成本一直以來得以穩步改善。 但是，在業界發展的新時代，隨著矽功率MOSFET元件接近其理論極限，其演進速度下降了很多。 同時，新材料氮化鎵的理論性能極限穩步發展，其性能極限比老化的MOSFET元件高出6,000倍，並且比目前市場上最好的氮化鎵產品高出300倍。

EEWeb
2020年7 月16日
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在EEWorld “虛擬圓桌會議” 關於D類音訊的討論的第二部份中，我們的小組成員深入探討了新興氮化鎵元件（GaN）對D類設計的影響：矽元件在哪方面仍然佔主導地位？ 在D類放大器中使用GaN的性能優勢是什麼？ D類放大器中GaN與矽的未來預期趨勢如何？

參加這個虛擬圓桌會議包括Analog Devices公司音訊系統架構師Joshua LeMaire（JL）、 宜普電源轉換公司（EPC）戰略技術銷售副總裁Steve Colino（SC）和 英飛淩（Infineon ）D類音訊應用工程主管Jens Tybo Jensen（JTJ）。

EEWorld Online
2020年7月
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氮化鎵功率電晶體是面向嚴苛航太任務的功率和射頻應用的理想元件。 通過全新基於eGaN^®元件的解決方案，EPC Space公司提供專門為商業衛星關鍵應用而設計的氮化鎵元件，可確保元件的耐輻射性能和對單粒子效應的免疫能力。 這些元件具有極高的電子遷移率、低溫度系數和非常低的導通阻抗。

EETimes
2020年7月
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A high power 1/16^th brick converter using GaN FETs could increase maximum load current in these designs.

Electronics Specifier
July, 2020
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增強型氮化鎵（eGaN^®）技術使能新一代功率轉換器，讓轉換器能夠在更高的頻率、更高的效率和前所未有的高功率密度下工作。 與矽MOSFET元件相比，eGaN元件還具有更優越的耐輻射性能。

Bodo’s Power Systems
2020年7月
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這些元件為什麼越來越受歡迎？還有什麼方面需要改善的？氮化鎵(GaN)和碳化矽(SiC)功率元件的製造商將推出下一代具備全新性能和高規格的產品。但是，在系統中採用這些元件之前必需證明它們是可靠的。

Semiconductor Engineering
2020年6月
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在超過四十年中，隨著功率MOSFET元件的結構、技術和電路拓撲的創新，可滿足不斷增長的電力需求，因此改善了電源管理的效率和成本。 然而，在這新世紀的發展，隨著矽功率MOSFET元件已經接近其理論極限，其改進速度已大為減慢。 與此同時，一種全新材料 - 氮化鎵（GaN）- 正朝著新的理論性能領域的方向，穩步發展，其性能是老化的MOSFET元件的6,000倍，以及是目前市場的最優越GaN元件的300倍。

EETimes
2020年6月
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Over the past decade computers, displays, smart phones and other consumer electronics systems have become thinner while also becoming more powerful. As a result, the market continues to increase its demand for thinner power supply solutions with greater power density. This article examines the feasibility of adopting various non-isolated dc-dc stepdown topologies for an ultra-thin 48-V to 20-V, 250-W power solution.

How2Power
May, 2020
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Brushless DC (BLDC) motors are a popular choice and are finding increasing application in robotics, drones, electric bicycles, and electric scooters. All these applications are particularly sensitive to size, weight, cost, and efficiency. A monolithically integrated GaN power stage is demonstrated powering a 400 W capable BLDC motor with low switching losses and significant savings in size and weight.

Power Electronics Europe
May, 2020
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Beyond just performance and cost improvement, the most significant opportunity for GaN technology to impact the power conversion market comes from its intrinsic ability to integrate multiple devices on the same substrate. GaN technology, as opposed to standard silicon IC technology, allows designers to implement monolithic power systems on a single chip in a more straightforward and cost-effective way.

Bodo’s Power Systems
May, 2020
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Starting on page 13 of this story, EPC discusses with David Morrison the latest GaN developments meant for APEC. Alex Lidow, CEO and co-founder of EPC, discussed his company’s new power stage ICs, their development of GaN-based reference designs using a multi-level topology and various demos that were originally bound for APEC.

How2Power Today
April, 2020
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中壓氮化鎵場效應電晶體（eGaN FET）的成本在三年前已經比等效額定功率MOSFET器件的成本更低。當時，EPC公司決心利用氮化鎵場效應電晶體的性能及成本效益優勢，積極研發及支持48 V輸入或輸出的應用。車用及電腦應用的48 V 轉換逐漸成為全新的架構，也成為了功率系統的全新標準。

Power Systems Design
2020年3月31日
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An integrated circuit made using GaN-on-Si substrates has been in production for over five years. The ultimate goal is to achieve a single component IC that merely requires a simple digital input from a microcontroller and produces a power output that drives a load efficiently, reliably under all conditions, in the smallest space possible, and economically. Discrete power transistors, whether silicon-based or GaN-on-Si, are entering their final chapter. Integrated GaN-on-Si can offer higher performance in a smaller footprint with significantly reduced engineering required.

IEEE Power Electronics Magazine
March 2020
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