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基氮化鎵功率元件如何把矽基功率MOSFET逐出?

基氮化鎵功率元件如何把矽基功率MOSFET逐出?

專為高效電源轉換而設的氮化鎵功率電晶體已經投產7年多了。全新的市場例如雷射雷達、波峰追蹤及無線電源,都成為氮化鎵的新興市場,因為氮化鎵具備超高速的的開關速度。這些市場使得氮化鎵產品得以量產、成本更低及具備優越的可靠性。這些優勢為比較保守的設計工程師提供更大的利好條件,因此,DC/DC轉換器工程師、AC/DC轉換器及車載應用工程師都開始對氮化鎵器件進行評估。要把120億美元的矽基MOSFET市場轉為氮化鎵市場,還有什麼壁壘呢?就是信心的問題。設計工程師、製造工程師、採購經理及管理層都必需對氮化鎵技術的優勢有足夠的信心、相信氮化鎵技術可以解決設計師對採用全新技術的風險的疑問。讓我們看看3個主要構成風險的因素:供應鏈、成本及產品的可靠性。

IEEE Spectrum
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歐洲PCIM研討會的 Podium Session為採納氮化鎵功率元件的步伐譜出新章

歐洲PCIM研討會的 Podium Session為採納氮化鎵功率元件的步伐譜出新章

氮化鎵功率製造商的管理層代表雲集歐洲PCIM研討會,包括EPC、Transphorm、GaN Systems、 Infineon 及Navitas,展示他們的重大發展,為氮化鎵技術成為主流技術及為批量應用推進。從五個演講內容來看,預期業界加速採納氮化鎵元件有三個主要原因。

Bodo’s Power Systems
2016年6月1日
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Yole發表關於誰主矽基氮化鎵市場報告

Yole Développement市場研究公司將於本星期發表關於“矽襯底氮化鎵基技術及LED與功率電子市場”研究報告。分析員相信功率電子應用將普遍採納矽基氮化鎵技術。功率電子市場所涵蓋的應用包括交流-直流或直流-交流電源轉換,這些應用皆面對很大的電源損耗並隨著更高功率及更高工作頻率而增加。由於目前的矽基技術已接近其極限,因此很困難達到業界所需的更高要求。

詳情請訪問 http://powerelectronicsworld.net/article/0/79693-yole-power-to-dominate-gan-on-silicon-market.html

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EPC Addresses Global GaN Power Management Product Demand; Leverages Digi-Key for Global Distribution

Global electronic components distributor Digi-Key Corporation, the industry leader in electronic component selection, availability and delivery, today announced new inventory of Gallium Nitride (GaN) power management products, available for immediate shipment as part of an exclusive global distribution agreement with Efficient Power Conversion (EPC) http://www.digikey.com/us/en/press-release/epc-gan-global-distribution-agreement.html

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矽、氮化鎵與碳化矽器件的比拼:我的功率設計應該選用哪一個製程及供應商?

雜誌:EDN
作者:Steve Taranovich
日期:2013年3月15日

隨著功率元件不斷的演進,領先開發者之間的競賽更趨白熱化。業界專家認為在2013年中大約有一半的氮化鎵、矽及碳化矽器件的供應商將在製程方面取得進展、提供全新結構及性能,進而為業界提供全新選擇及開發工具。詳情請瀏覽http://www.edn.com/design/power-management/4409627/1/Si-vs--GaN-vs--SiC--Which-process-and-supplier-are-best-for-my-power-design-

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矽基氮化鎵場效應電晶體促進全新應用的出現

作者 :Ashok Bindra
雜誌 :How2Power Today (2012年12月刊)

在過去的數年間雖然有很多討論關於基於氮化鎵的功率電晶體可以替代普遍使用的矽MOSFET器件,但矽基氮化鎵的功率場效應電晶體可能需要較長的時間才可以在電源轉換領域成為主流器件。目前數個全新應用的出現將有望實現氮化鎵技術所提供的優勢。除了具備商用及高可靠性的條件,氮化鎵器件的獨有特性正在促進全新應用的出現。

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Huge Expectations for GaN Market Growth

The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies (IRF & EPC Corp.) are selling products on the open market. However, the overall GaN activity has seen extra revenues as R&D contracts, qualification tests and sampling for qualified customers was extremely buoyant.

http://www.news10.com/story/17735484/power-gan-2012?clienttype=printable

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加快eGaN 發展,EPC稱矽FET已走到盡頭

eGaN® FET 的高性能正在更快地被DC/DC 電源轉換、負載點轉換器、D類音訊放大器及高頻電路等應用採用,而TI推出業界首款100V半橋GaN FET驅動器(LM5113),經過優化,配合氮化鎵場效應電晶體使用,則更進一步推動eGaN FET在高性能電信、網路以及數據通信中心的應用。

詳情請瀏覽:

電子設計技術(2012年4月書刊)

EDN 電子雜誌2012年第04期

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法國Yole公司預測氮化鎵功率器件在2012年的銷售額將達一千萬美元

Written by Peter Clarke - 3/7/2012 2:20 PM EST

LONDON - The market for power devices implemented in gallium nitride was less than $2.5 million in 2011, according to market research firm Yole Developpement (Lyon, France). However, there is a great deal of R&D activity and Yole sees the power GaN market growing to nearly $0 million in 2012 and $500 million in 2016.

International Rectifier Corp. (El Segundo, Calif.) and Efficient Power Conversion Corp. (El Segundo, Calif.) are likely to remain the two main vendors of GaN power devices in early 2012 and the annual market is likely to say below $10 million, Yole said.

The year of 2013 should see a transition from product qualification to production for a number of GaN power chip companies as the annual market climbs to $50 million. The availability in 2015 power devices built using processes with +600-V breakdown specifications should open the market to off-mains applications by which time 12 to 15 companies should be sharing consumption of more than 100,000 6-inch equivalent wafers.

Beyond 2015 the qualification of GaN for the electric vehicle sector would allow the GaN device business to approach $1 billion in annual value, according to Philippe Roussel, power electronics business unit manager at Yole. Nonetheless that will depend on how and when automobile makers choose between silicon, silicon-carbide, and GaN technology.

A number of alternative substrates are being pursued including GaN-on-Sapphire, GaN-on-SiC, GaN-on-GaN, GaN-on-AlN and GaN-on-silicon. Yole takes the position that GaN-on-silicon is likely to dominate production as 6-inch wafers topped with 7-micron thick GaN epi are already available. Similar wafers of 200-mm diameter are under qualification and their availability will likely make this technology the economic choice, Yole said.

Some LED players, who already use GaN, are looking at GaN power as a means of diversification for their manufacturing capacity, Yole said.

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Gallium nitride based devices set to bring substantial boost to power efficiency

Gallium nitride has long been known to have useful properties when it comes to electronic components. Even so, its application has largely been confined to more exotic areas of the industry, particularly rf transistors.

But GaN is beginning to find application in what could be considered the mainstream, with some of its proponents suggesting its arrival could mark the beginning of the end for the traditional power mosfet.

By: Graham Pitcher
New Electronics
December 13, 2011
Read the article

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