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面向快速發展的關鍵應用的GaN HEMT,它的性能優於MOSFET

面向快速發展的關鍵應用的GaN HEMT,它的性能優於MOSFET

矽功率MOSFET未能跟上電力電子行業的發展變化,而效率、功率密度和更小的外型尺寸等因素是行業的主要需求。 矽MOSFET元件的性能已達到其理論極限,並且由於電路板的空間非常寶貴,因此功率系統設計人員必需找出替代方案。 氮化鎵(GaN)元件是一種高電子遷移率電晶體(HEMT),這種半導體正為新興應用不斷增值。

EETimes
2020年8月
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分類: 技術文章

EPC eGaN的性能進一步接近完美功率元件的性能

EPC eGaN的性能進一步接近完美功率元件的性能

宜普電源轉換公司(EPC)的第五代(Gen5)產品改善了製程、性能而同時降低可買到的氮化鎵電晶體的成本,以及縮小其晶片和電路板的尺寸。

EPC首席執行長及共同創辦人Alex Lidow與他的團隊再次發揮專業精神,為設計師提供面向全新市場的獨特、可選的、需要比基於矽基元件更高效的功率解決方案。 團隊不僅僅在技術方面各有所長,並深入地瞭解製造工藝的量子力學,從而提高產品性能而同時縮小EPC解決方案的尺寸及降低其成本。

EDN
2017年3月15日
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分類: 技術文章

氮化鎵元件製造商EPC公司在實現替代矽基晶片方面大步向前走

氮化鎵元件製造商EPC公司在實現替代矽基晶片方面大步向前走

3300億美元的矽晶片市場是所有電力電子行業的發展基礎。但成熟技術引發一輪併購後,該業界的發展步伐緩慢下來。

這就是為什麼創新者和主力推動利用氮化鎵替代矽材料的Alex Lidow認為目前是氮化鎵時代。他的宜普電源轉換公司(EPC)推出新一代eGaN晶片,比之前的晶片的尺寸小50%和性能高出很多倍。

VentureBeat
2017年3月15日
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分類: 技術文章

Thoughtful Board Design Unlocks the Promise of GaN

Thoughtful Board Design Unlocks the Promise of GaN

Power transistors with faster switching speeds will enable power supplies with smaller form factors and higher energy transfer efficiencies. Indeed, the elimination of heat sinks will give designers the ability to visualize entirely new form factors for power bricks and modules, including those enabling wireless power transfers. Gallium-nitride (GaN) transistors fabricated on silicon substrates can boost efficiencies and help shrink the footprint of power supplies.

Electronic Design
March, 2016
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How to get 500W in an eighth-brick converter with GaN, part 1

How to get 500W in an eighth-brick converter with GaN, part 1

DC-DC “brick” converters are familiar to many engineers, and have wide usage in telecommunications, networking, data centers, and many other applications. This is due in large part to adoption of a common footprint defined by the Distributed-power Open Standards Alliance (DOSA) and generally accepted input/output voltage ranges. These converters provide isolation and voltage step-down, and have become increasingly sophisticated, with features that enable advanced system optimization and control.

EDN Network
November 23, 2015
By: John Glaser
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Why Consolidation In The Chip Industry Matters To You

Why Consolidation In The Chip Industry Matters To You

If expanding industries typically indicate vibrancy, a race to acquire and consolidate is generally reflective of the opposite – a period of slowed growth in mature, often once high-flying categories. And while many industries experience a period of stardom, followed by a sharp and steady decline, we should be extremely worried when they occur in industries that are fundamentally central to our socio-economic vitality.

Forbes
June 26, 2015
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WiGaN: eGaN FETs in Wide Load Range High Efficiency Wireless Power

Practical wireless power systems need to address the convenience factor of such systems. Standards such as the A4WP Class 3 have defined a broad coil impedance range that address the convenience factor and can be used as a starting point to compare the performance of the amplifiers. In this installment of WiGaN both the ZVS Class-D and Class-E amplifiers will be tested at 6.78 MHz to the A4WP Class 3 standard.

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如何使用氮化鎵器件: 驅動氮化鎵場效應電晶體及版圖方面的考慮

本專欄已經討論了氮化鎵場效應電晶體的優勢及與矽MOSFET器件相比, 它們具備可以實現更高效率及開關速度的潛力。 本章將討論使用氮化鎵場效應電晶體時,在驅動器及版圖方面的考慮,以提高性能。

EEWeb
八月份: 驅動氮化鎵場效應電晶體及版圖方面的考慮

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Driving eGaN™ Transistors for Maximum Performance

The recent introduction of enhancement mode GaN transistors (eGaN™) as power MOSFET/ IGBT replacements in power management applications enables many new products that promise to add great system value. In general, an eGaN transistor behaves much like a power MOSFET with a quantum leap in performance, but to extract all of the newly-available eGaN transistor performance requires designers to understand the differences in drive requirements.

By Johan Strydom and Alex Lidow
September, 2010

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