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面向多種功率應用的氮化鎵電晶體

面向多種功率應用的氮化鎵電晶體

矽功率MOSFE追不上目前功率電子業界的演進步伐 -- 業界需要具備高效、高功率密度及細小的外型尺寸的元件。業界看到矽MOSFET已經達到它的理論極限,從而需要找出全新元件。氮化鎵(GaN)是一種HEMT元件,具備附加增值的優勢,被證明為可以支持全新應用的要求。

Power Electronics News
2020年3月25日
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分類: 技術文章

氮化鎵(GaN)技術的最新發展是什麼?

氮化鎵(GaN)技術的最新發展是什麼?

知名企業領袖 - 宜普電源轉換公司(EPC)首席執行官Alex Lidow於2009年在市場推出第一個氮化鎵電晶體。 經過了10年的氮化鎵產品銷售,DESIGN & ELEKTRONIK 雜誌編輯Ralf Higgelke與Alex會面並談論氮化鎵技術的最新發展。

DESIGN & ELEKTRONIK雜誌
2020年2月20日
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分類: 技術文章

Development Boards Make Evaluating eGaN FETs Simple

Long talked about, wide bandgap gallium nitride-on-silicon (GaN-on-Si) transistors are now commercially available. They are being touted for replacing silicon-based MOSFETs, which are turning out to be inefficient for many high-performance power supply designs. Recently, several suppliers of GaN-on-Si-based HEMTs and FETs have emerged in the marketplace, among them Efficient Power Conversion (EPC). To expedite the evaluation of eGAN FETs for power supply designs transitioning from silicon MOSFETs to eGaN FETs, EPC has released several development boards in the last few years.

By Ashok Bindra
Digi-Key Article Library
July 15, 2014
Read the article

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分類: 技術文章

宜普電源轉換公司(EPC)將於GOMACTech研討會與工程師分享採用氮化鎵(eGaN®)電晶體的直流-直流轉換器工作在10 MHz頻率、峰值效率為89%並可在嚴峻環境下工作

宜普公司首席執行長及共同創辦人Alex Lidow 將與工程師分享專為工作在10 MHz頻率範圍而設的全新增強型氮化鎵(eGaN®)高電子遷移率電晶體系列,由於這些電晶體在經過輻射照射後仍然具高可靠性,因此它們是高可靠性應用的理想器件。

矽基增強型功率氮化鎵場效應電晶體之全球領導廠商宜普電源轉換公司將在四月三日於美國南卡羅來納州的Charleston市舉行的第39屆GOMACTech年度研討會演講。

自2010年以來,增強型氮化鎵電晶體已作 商業用途 ,並大大地提高商用及使用不同拓撲及功率級的DC-DC轉換器的效率。此外,該電晶體也被展示了可 抵受很高伽瑪劑量的輻照並通過單次事件效應(SEE)測試。 與耐受輻照的功率MOSFET器件相比,氮化鎵場效應電晶體可改善影響開關性能的品質因數達40倍,使得宇航級供電應用設計師可實現商用先進系統的效率。

Alex Lidow稱「我們很高興藉著這個機會與工程師分享宜普公司最新一代高性能氮化鎵功率電晶體以及這些器件經過輻照測試後所取得的優異成績。專為在數MHz頻率開關的轉換器應用而設的矽基氮化鎵功率電晶體可幫助設計耐輻射系統的工程師實現與商用先進系統一樣的功率密度及效率。」

關於2014年GOMACTech 研討會

GOMACTech 旨在為政府系統中的微電路應用檢討其開發專案。於1968年開始,該研討會主要關注由國防部及其他政府機構所開發的系統的進程,並公佈政府在微電子發展方面的重要建議如VHSIC及MIMIC,以及作為政府檢討專案的平臺。

 

宜普电源转换公司简介

宜普公司是基于增强型氮化镓的功率管理器件的领先供应商,为首家公司推出替代功率MOSFET器件的硅基增强型氮化镓(eGaN)场效应晶体管,其目标应用包括 直流- 直流转换器无线电源传送包络跟踪、射频传送、太阳能微型逆变器、 光学遥感技术(LiDAR)D类音频放大器 等应用,器件性能比最好的硅功率MOSFET高出很多倍。详情请浏览 我们的网站www.epc-co.com.cn 。

客户可以在我们的网页注册( http://bit.ly/EPCupdates ),定期收取EPC公司的最新产品资讯。

商标

eGaN® 是Efficient Power Conversion Corporation宜普电源转换公司的注册商标。

媒体联络人

Winnie Wong ( [email protected])

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分類: 新聞稿

Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Darnell’s Energy Summit

EPC CEO and applications experts will conduct a half-day seminar and technical presentations including an invited plenary session presentation on GaN FET technology and applications.

EL SEGUNDO, Calif. — August, 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting an educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2013. The conference will be held in Dallas, Texas from September 9th through the 12th.

This summit combines efficient power conversion, green building design and smart grid electronics into a single conference. The presentations will focus on advanced power conversion technologies needed for the successful development of next-generation power systems. It is a solutions-oriented event, with a strong emphasis on practical advances in power electronics and energy efficiency.

“It is noteworthy that the Darnell Energy Summit has selected EPC experts to conduct an educational seminar and to give technical papers focusing on GaN technology at their conference. This selection continues to demonstrate the superior performance of GaN technology has gained the interest and acceptance of those interested in improving energy efficiency,” said Alex Lidow, EPC’s co-founder and CEO.

Educational Seminar: GaN Transistors for Efficient Power Conversion
Presenter: Alex Lidow and David Reusch
Monday, September 9th (9:00 a.m. – 12:30 p.m.)

Expanding on the GaN FET technology textbook written by EPC, this seminar will explain how GaN High Electron Mobility Transistors (HEMT) work. This session will also discuss how to use these devices including showing the drivers, layout, and thermal considerations for high performance and high frequency power conversion. To showcase the real-world value of GaN technology, several applications including efficient DC-DC conversion, high frequency envelope tracking, and wireless power transfer will be presented. The seminar will conclude with a look at future of this emerging displacement technology.

Technical Presentations by EPC Experts Featuring GaN FETs:

• Plenary Session 
“GaN: Crushing Silicon One Application at a Time”
Presenter: Alex Lidow
​Tuesday, September 10th (Session 2.1, 1:45 p.m.)

• Technical Sessions 
“eGaN®FETs for High Frequency Hard-Switching Converters”
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分類: 新聞稿
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