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EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer Applications at PCIM Europe 2021 Digital Days

EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer Applications at PCIM Europe 2021 Digital Days

Efficient Power Conversion (EPC) will showcase the company’s latest enhancement-mode gallium nitride-based FETs and ICs demonstrating how GaN technology’s superior performance is transforming power delivery for automotive, computing, and robotics at the PCIM Europe 2021 Digital Days.

EL SEGUNDO, Calif.— April 2021 — The EPC team will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3 – 7. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN® technology.

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Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) announces that the EPC2152 ePower™ Stage IC has received the 2020 Elektra Award for Semiconductor Product of the Year (Analogue).

EL SEGUNDO, Calif.— March 2021 — EPC’s ePower™ stage, EPC2152 Integrated Circuit (IC), has been honored with an Elektra Award 2020 in the Semiconductor Product of the Year – Analogue category. The award presentation was announced on March 25th during a virtual awards ceremony hosted by Electronics Weekly. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation, and contribution to the global electronics industry. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.

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GaN Is Revolutionizing Motor Drive Applications

GaN Is Revolutionizing Motor Drive Applications

In last month’s Safety & Compliance column in How2Power, “WBG Semiconductors Pose Safety And EMI Challenges In Motor Drive Applications,”[1]Kevin Parmenter made some assertions about the difficulties of using SiC, and to a lesser extent GaN, power semiconductors in large motor-drive applications. This commentary is a response to that article, showing that GaN can be a game changer in low-voltage integrated motors.

How2Power
February, 2021
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Layout Considerations for GaN Transistor Circuits

Layout Considerations for GaN Transistor Circuits

Gallium nitride (GaN) transistors have been in mass production for over 10 years. In their first few years of availability, the fast switching speed of the new devices – up to 10 times faster than the venerable Si MOSFET – was the main reason for designers to use GaN FETs. As the pricing of GaN devices normalized with the MOSFET, coupled with the expansion of a broad range of devices with different voltage ratings and power handling capabilities, much wider acceptance was realized in mainstream applications such as DC-DC converters for computers, motor drives for robots, and e-mobility bikes and scooters. The experience gained from the early adopters has led the way for later entrants into the GaN world get into production faster. This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their GaN-based designs at the lowest cost. The three topics are: (1) layout considerations; (2) thermal design for maximum power handling; and, (3) EMI reduction techniques for lowest cost.

Bodo’s Power Systems
January, 2021
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Efficient Power Conversion (EPC) Launches 40 V eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

Efficient Power Conversion (EPC) Launches 40 V eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

EPC introduces the 40 V, 3 milliohm EPC2055 eGaN® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — December 2020 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. 

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Digi-Key Electronics Partners with Efficient Power Conversion (EPC) to Host eGaN Motor Drive Webinar

Digi-Key Electronics Partners with Efficient Power Conversion (EPC) to Host eGaN Motor Drive Webinar

THIEF RIVER FALLS, Minnesota, USA – Digi-Key Electronics, the leading global electronic components distributor, announced that it has partnered with Efficient Power Conversion Corporation (EPC) to host a webinar on how to harness the power of eGaN FETS and ICs for motor drives. The webinar will take place on October 28 at 8 a.m. PST.

Register for the Harness the Power of GaN for Smaller, Lighter, More Precise Motor Drives webinar at EPC’s webinar page

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與矽MOSFET相比,宜普電源轉換公司(EPC)最新推出的100 V eGaN FET產品系列 為業界樹立了全新的性能基準

與矽MOSFET相比,宜普電源轉換公司(EPC)最新推出的100 V eGaN FET產品系列 為業界樹立了全新的性能基準

新一代100 V 氮化鎵場效應電晶體(eGaN® FET)是48 VOUT同步整流、D類音訊放大器、汽車資訊娛樂及雷射雷達系統的理想功率元件。

增強型矽基氮化鎵(eGaN)功率場效應電晶體和積體電路的全球領導廠商宜普電源轉換公司(EPC)最新推出的兩款100 V eGaN FET(EPC2218EPC2204),性能更高並且成本更低,可立即供貨。採用這些先進氮化鎵元件的應用非常廣闊,包括同步整流器、D類音訊放大器、汽車資訊娛樂系統、DC/DC轉換器(硬開關和諧振式)和面向全自動駕駛車輛、機械人及無人機的雷射雷達系統

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宜普電源轉換公司(EPC)的200 V 氮化鎵產品系列(eGaN FET)的性能提升一倍

宜普電源轉換公司(EPC)的200 V 氮化鎵產品系列(eGaN FET)的性能提升一倍

新一代200 V 氮化鎵場效應電晶體(eGaN® FET)是48 VOUT同步整流、D類音訊放大器、太陽能微型逆變器和功率優化器,以及多電平、高壓AC / DC轉換器的理想功率元件。

增強型矽基氮化鎵(eGaN)功率場效應電晶體和積體電路的全球領導廠商宜普電源轉換公司(EPC)最新推出的兩款200 V eGaN FET(EPC2215EPC2207 ),性能更高而同時成本更低,目前已有供貨。採用這些領先氮化鎵元件的應用十分廣闊,包括D類音訊放大器、同步整流器、太陽能最大功率點追蹤器(MPPT)、DC/DC轉換器(硬開關和諧振式),以及多電平高壓轉換器。

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宜普電源轉換公司(EPC)推出ePower 功率級積體電路系列,重新定義功率轉換

宜普電源轉換公司(EPC)推出ePower 功率級積體電路系列,重新定義功率轉換

宜普電源轉換公司(EPC)推出全新積體電路(IC)系列的首個產品,為高功率密度應用諸如DC/DC轉換、電機驅動及D類放大器,提供更高性能及更小型化的解決方案。

宜普電源轉換公司(EPC)宣佈推出80 V、12.5 A的功率級積體電路,專為48 V DC/DC轉換而設計,用於具有高功率密度的運算應用及針對電動車的電機驅動器。

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Qualifying and Quantifying GaN Devices for Power Applications

Qualifying and Quantifying GaN Devices for Power Applications

It’s okay to start using gallium-nitride (GaN) devices in your new designs. GaN transistors have become extremely popular in recent years. These wide-bandgap devices have been replacing LDMOS transistors in many power applications. For example, GaN devices are broadly being adopted for new RF power amplifiers used in cellular base stations, radar, satellites, and other high-frequency applications. In general, their ability to endure higher voltages and operate at frequencies well into the millimeter-wave (mmWave) range have them replacing traditional RF power transistors in most amplifier configurations.

Electronic Design
November, 2019
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宜普電源轉換公司提供氮化鎵(eGaN)功率元件的晶圓

宜普電源轉換公司提供氮化鎵(eGaN)功率元件的晶圓

為了使得客戶易於集成功率系統,宜普電源轉換公司(EPC)為客戶提供領導業界的氮化鎵功率元件的晶圓。

EPC公司宣佈推出領導業界的增強型氮化鎵元件的晶圓,使得客戶易於集成功率系統。EPC公司的氮化鎵場效應電晶體(eGaN® FET)及積體電路一直以來都是以單個並包含錫條或錫球的晶片級元件出售。

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Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion

Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion

EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

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宜普電源轉換公司(EPC)推出面向48 V DC/DC電源轉換、馬達控制及雷射雷達應用的100 V氮化鎵(eGaN)功率電晶體

宜普電源轉換公司(EPC)推出面向48 V DC/DC電源轉換、馬達控制及雷射雷達應用的100 V氮化鎵(eGaN)功率電晶體

專為功率系統設計師而設的EPC2052功率電晶體是一種100 V、13.5 mΩ並採用超小型晶片級封裝的電晶體,可實現74 A脈衝輸出電流。面向48 V-12 V DC/DC功率轉換器,這些新一代氮化鎵場效應電晶體工作在500 kHz頻率下,可實現超過97%的效率。如果工作在1 MHz時,則實現超過96%的效率。

宜普電源轉換公司(EPC)宣佈推出100 V的EPC2052氮化鎵場效應電晶體,其占板面積只是2.25平方毫米、最大導通阻抗(RDS(on))為13.5 mΩ及脈衝輸出電流高達74 A 以支援高效功率轉換。

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於無刷式直流伺服馬達,採用矽器件與採用氮化鎵場效應電晶體的功率逆變器的比較

由於德國航空太空中心的機械人及機械電子研究院(Robotics and Mechatronics Institute )對改善感測器及功率電子的興趣很大,我們利用開發全新機械人的機會來評估宜普電源轉換公司(EPC)的全新增強型氮化鎵場效應電晶體技術並與我們目前最優秀的逆變器設計進行比較。

雜誌 :Bodo’s Power Systems
作者:德國航空太空中心 (DLR) Robin Gruber
日期:2014年3月

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