新聞

客戶可以在我們的網頁 註冊 ,定期收取最新消息包括全新產品發佈、應用文章及更多其它資訊。如果你錯過了已發佈的消息,你可瀏覽以下的文檔。

Using GaN FETs can be as simple as using Silicon FETs – an example in 48V systems

Using GaN FETs can be as simple as using Silicon FETs – an example in 48V systems

In this article, the author introduces a GaN FET compatible analog controller that yields a low bill-of-material count and give designers the ability to design a synchronous buck converter in the same simple way as using silicon FETs, and offers superior performance for 48 V power systems.

Power Electronics News
April, 2021
Read article

閱讀全文
分類: 技術文章

面向電池供電的馬達控制應用並基於氮化鎵ePower功率級積體電路的逆變器

面向電池供電的馬達控制應用並基於氮化鎵ePower功率級積體電路的逆變器

氮化鎵電晶體和積體電路通過消除輸入濾波器中的電解電容,以提高馬達控制應用的功率密度。氮化鎵元件的卓越開關性能可消除死區時間且實現無與倫比的正弦電壓和電流波形,從而實現更平滑且沒有雜訊的操作。

Bodo’s Power Systems
2021年4月
閱讀文章

閱讀全文
分類: 技術文章

Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) announces that the EPC2152 ePower™ Stage IC has received the 2020 Elektra Award for Semiconductor Product of the Year (Analogue).

EL SEGUNDO, Calif.— March 2021 — EPC’s ePower™ stage, EPC2152 Integrated Circuit (IC), has been honored with an Elektra Award 2020 in the Semiconductor Product of the Year – Analogue category. The award presentation was announced on March 25th during a virtual awards ceremony hosted by Electronics Weekly. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation, and contribution to the global electronics industry. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.

閱讀全文
分類: 新聞稿

氮化鎵(GaN)積體電路重新定義功率轉換

氮化鎵(GaN)積體電路重新定義功率轉換

氮化鎵技術發展迅速,在開發出多代全新離散元件後,具備更高效、更小尺寸和成本更低等優勢的新世代積體電路繼續崛起。氮化鎵積體電路讓產品可以更小型化、開關更快、更高效且更易於設計。

Power Systems Design
2021年3月 (第36-39頁)
閱讀文章

閱讀全文
分類: 技術文章

How GaN Integrated Circuits Are Redefining Power Conversion

How GaN Integrated Circuits Are Redefining Power Conversion

Gallium nitride (GaN) power devices have been in production for over 10 years and, beyond just performance and cost improvements, the most significant opportunity for GaN technology to impact the power conversion market comes from the intrinsic ability to integrate multiple devices on the same substrate. This capability will allow monolithic power systems to be designed on a single chip in a more straightforward, higher efficiency, and more cost-effective way.

Power Electronic News
March, 2021
Read article

閱讀全文
分類: 技術文章

Lidar Demonstration Board Drives Lasers with Currents up to 220 A with Under 3-ns Pulses using eGaN FETs

Lidar Demonstration Board Drives Lasers with Currents up to 220 A with Under 3-ns Pulses using eGaN FETs

The ultra-fast transition EPC2034C eGaN® FETs used on the EPC9150 enables high current pulses up to 220 A and pulse widths under 3 ns, thus allowing a lidar system to see farther, faster, and better.

EL SEGUNDO, Calif.— March 2021 — Efficient Power Conversion  (EPC) announces the availability of the EPC9150, a 200 V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs provide power pulses to drive the laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET and in a small fraction of the area, energy, and cost. Thus, enhancing the overall performance, including accuracy, precision, and processing speed as well as the price of a lidar system.

閱讀全文
分類: 新聞稿

EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2219, 65 V gallium nitride transistor with integrated reverse gate clamp diode optimized for high resolution lidar systems.

EL SEGUNDO, Calif.— March 2021 — EPC announces successful AEC Q101 qualification of the 65 V EPC2219 designed for lidar systems in the automotive industry and other harsh environments. 

閱讀全文
分類: 新聞稿

Minimizing Thermo-mechanical Stress in Chipscale eGaN Devices

Minimizing Thermo-mechanical Stress in Chipscale eGaN Devices

Enhancement-mode gallium nitride (eGaN) FETs have demonstrated excellent thermomechanical reliability in actual operation in the field or when tested according to AEC or JEDEC standards. This is because of the inherent simplicity of the “package,” the lack of wire bonds, dissimilar materials, or mold compound. Recently, an extensive study of underfill products was conducted to experimentally generate lifetime predictions. A finite element analysis at the end of this section explains the experimental results and generates guidelines for selection of underfill based on key material properties.

Bodo's Power
March, 2021
Read article

閱讀全文
分類: 技術文章

宜普電源轉換公司(EPC)eToF 雷射驅動器IC 助力革新光達系統設計

宜普電源轉換公司(EPC)eToF 雷射驅動器IC 助力革新光達系統設計

宜普電源轉換公司(EPC)推出氮化鎵(GaN)積體電路(IC)系列,實現性能更高、更小巧且採用飛行時間(ToF)技術的光達應用,包括機器人、無人機、3D感測器和自動駕駛車輛等應用。

宜普電源轉換公司(EPC)宣佈推出雷射驅動器IC(EPC21601),在單個晶片上集成了40 V、10 A 場效應電晶體、閘極驅動器和3.3 V邏輯電平輸入,面向採用飛時測距(ToF)技術的光達系統,用於機器人、監控保安系統、無人機、全自動駕駛車輛和吸塵器。

閱讀全文
分類: 新聞稿

EPC’s ePower Stage EPC2152 Integrated Circuit Named Finalist in Prestigious Elektra Awards

EPC’s ePower Stage EPC2152 Integrated Circuit Named Finalist in Prestigious Elektra Awards

EPC’s ePower™ Stage EPC2152 Integrated Circuit has been selected as a finalist in the Semiconductor Product of the Year – Analogue category, in this year’s Elektra Awards.  These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation and contribution to the global electronics industry.

Companies are invited to enter individual categories and must demonstrate how innovative their product is, how it addresses its intended application better than incumbent products and what additional applications or markets could be opened-up.  Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.  Due to the current COVID restrictions the Elektra Awards ceremony this year will be held virtually on 25th March and the winners announced during the event.

閱讀全文
分類: 新聞稿

GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller

GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller

The combination of the Renesas dual synchronous GaN buck controller and ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enables high power density and efficiency with the same BOM size and cost as silicon.

EL SEGUNDO, Calif.—  February, 2021 — EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from EPC to achieve greater than 95% efficiency for 48 V input to 12 V regulated output conversion at 25 A.  

閱讀全文
分類: 新聞稿

Podcast - Spirit Behind the Screen: EPC's Alex Lidow and GaN Reliability

Podcast - Spirit Behind the Screen: EPC's Alex Lidow and GaN Reliability

In this episode, Alex Lidow and Marti McCurdy discusses EPC’s test-to-failure method in improving gallium nitride (GaN) devices. According to Alex, testing to failure has allowed EPC to tease out the exact stressors that cause failure and improve EPC’s GaN devices 10-100 times the reliability of commercial devices, and even 100 times reliability in space applications.

Alex and Marti discuss:

(1:30) Why test to fail
(4:14) Learning from failure data and stressors
(11:38) Safe Operating Area
(14:30) Mechanical stressors
(17:45) EPC Space

Listen now

閱讀全文
分類: 訪問文稿

Thermal Management of Chip-Scale GaN Devices

Thermal Management of Chip-Scale GaN Devices

This article discusses the challenges that thermal management raises due to increase power density, especially with chip-scale packaging (CSP). What is sometimes overlooked, however, is that CSP eGaN® power FETs and integrated circuits have excellent thermal performance when mounted on standard printed circuit board (PCBs) with simple methods for attaching heat sinks. Simulations, supported by experimental verification, examine the effect of various parameters and heat flow paths to provide guidance on designing for performance versus cost.

Bodo’s Power Systems
February, 2021
Read article

閱讀全文
分類: 技術文章

The 48 V Revolution: Why GaN Plus Digital Control for Ultra-thin Laptops

The 48 V Revolution: Why GaN Plus Digital Control for Ultra-thin Laptops

This article discusses how GaN-based solutions coupled with digital control increase efficiency, shrink the size, and reduce system costs for high density computing applications like ultra-thin laptops and high-end gaming systems. As computers, displays, smartphones and other consumer electronics systems become thinner and more powerful over the past decade, there is increasing demand for addressing the challenge of thinner solutions while extracting more power out of limited space. To address this challenge, the comparative advantages of various non-isolated DC-DC step-down topologies for ultra-thin 48 V – 20 V power solutions that are designed to fit inside a notebook computer or an ultra-thin display are examined.

Power Electronics News
January, 2021
Read article

閱讀全文
分類: 技術文章

EPC Releases Physics-Based Models That Project eGaN Device Lifetime in New Reliability Report

EPC Releases Physics-Based Models That Project eGaN Device Lifetime in New Reliability Report

Efficient Power Conversion (EPC) publishes Phase-12 Reliability Report adding to the extensive knowledge found in their first eleven reports. With this report, EPC demonstrates field experience of 226 billion eGaN ® device hours and a robustness capability unmatched by silicon power devices.

EL SEGUNDO, Calif.— January 2021 — EPC announces its Phase-12 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. eGaN devices have been in volume production for more than eleven years and have demonstrated very high reliability in over 226 billion hours of operation, most of which are in vehicles, LTE base stations, and satellites, to name just a few applications with rigorous operating conditions.

閱讀全文
分類: 新聞稿

Layout Considerations for GaN Transistor Circuits

Layout Considerations for GaN Transistor Circuits

Gallium nitride (GaN) transistors have been in mass production for over 10 years. In their first few years of availability, the fast switching speed of the new devices – up to 10 times faster than the venerable Si MOSFET – was the main reason for designers to use GaN FETs. As the pricing of GaN devices normalized with the MOSFET, coupled with the expansion of a broad range of devices with different voltage ratings and power handling capabilities, much wider acceptance was realized in mainstream applications such as DC-DC converters for computers, motor drives for robots, and e-mobility bikes and scooters. The experience gained from the early adopters has led the way for later entrants into the GaN world get into production faster. This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their GaN-based designs at the lowest cost. The three topics are: (1) layout considerations; (2) thermal design for maximum power handling; and, (3) EMI reduction techniques for lowest cost.

Bodo’s Power Systems
January, 2021
Read article

閱讀全文
分類: 技術文章

Intrinsic Failure Mechanisms in GaN-on-Si Power Transistors

Intrinsic Failure Mechanisms in GaN-on-Si Power Transistors

Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles. The goal of qualification testing is to have zero failures out of a large group of parts tested. By testing parts to the point of failure, an understanding of the amount of margin between the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.

IEEE Power Electronics Magazine
December, 2020
Read article

閱讀全文
分類: 技術文章
RSS
123456789