新聞

客戶可以在我們的網頁 註冊 ,定期收取最新消息包括全新產品發佈、應用文章及更多其它資訊。如果你錯過了已發佈的消息,你可瀏覽以下的文檔。

EPC公司進一步更新了其廣受歡迎的 氮化鎵(GaN)功率電晶體及積體電路的播客系列

EPC公司進一步更新了其廣受歡迎的 氮化鎵(GaN)功率電晶體及積體電路的播客系列

宜普電源轉換公司(EPC)依據《氮化鎵電晶體–高效功率轉換元件》第三版教科書的增訂內容,更新了首7個、合共14個教程的視頻播客,與工程師分享採用氮化鎵場效應電晶體及積體電路的理論、設計基礎及應用,例如雷射雷達(光達)、DC/DC轉換及無線電源等應用。

宜普電源轉換公司(EPC)更新了其廣受歡迎的“如何使用氮化鎵元件”的視頻播客系列。該視頻系列的內容是依據最新出版的《氮化鎵電晶體–高效功率轉換元件》.第三版教科書的內容製作。合共14個教程的視頻播客系列旨在為功率系統設計工程師提供基礎技術知識及針對專有應用的工具套件,從而讓工程師學習如何採用氮化鎵電晶體及積體電路,設計出更高效的功率轉換系統。

閱讀全文
分類: 新聞稿

EPC partners with Würth Elektronik eiSos to present Trilogy of Wireless Power Transfer

EPC partners with Würth Elektronik eiSos to present Trilogy of Wireless Power Transfer

The "Trilogy of Wireless Power Transfer" consists of three parts: Basics Principles of Wireless Power Transmission, Wireless Power Transfer Systems and Applications. The first part of the book explains the basic physical principles and the different methods of contactless power transmission. Furthermore, the leading standards are presented in this part. The second part describes wireless power transfer systems, the different topologies of wireless power transmission, the right selection of transmitter and receiver coils required to increase efficiency, and the selection of transistors, for instance. The third part is dedicated to practical applications. This includes applications within the scope of the Qi standard, as well as examples of proprietary solutions. An overview of EMI-relevant topics for closely and loosely coupled systems, as well as an example of a multimode wireless power transmission system round out the practical part. The authors of the "Trilogy of Wireless Power Transfer" are Cem Som, Division Manager Wireless Power Transfer at Würth Elektronik eiSos; and Dr. Michael de Rooij, Vice President Applications Engineering at Efficient Power Conversion Corporation, Inc. The book costs 19 euros and can be ordered from Würth Elektronik eiSos or through bookstores.

Learn more

閱讀全文
分類: 技術文章

How eGaN FETs power LIDAR

How eGaN FETs power LIDAR

LIDAR is presently a subject of great interest, primarily due to its widespread adoption in autonomous navigation systems for vehicles, robots, drones, and other mobile machines. eGaN devices are one of the main factors in making affordable, high performance LIDAR possible in a small form factor thus further fueling the LIDAR revolution.

EDN
By John Glaser
Read article

閱讀全文
分類: 技術文章

eGaN FET-Based Synchronous Rectification

eGaN FET-Based Synchronous Rectification

As GaN-on-Si becomes more common in DC-DC converter designs, questions often arise from experienced designers about the impact of the unique characteristics of GaN transistors when used as synchronous rectifiers (SRs). In particular, the third quadrant off-state characteristics, better known as “body diode” conduction in Si MOSFETs, which is activated during converter dead-time, is of interest. For this article, the focus will be on the similarities and differences of Si MOSFETs and eGaN® FETs when operated as a “body diode” and outline their relative advantages and disadvantages.

Bodo’s Power Systems
By David Reusch & John Glaser
Read article

閱讀全文
分類: 技術文章

Best Practices for Integrating eGaN FETs

Best Practices for Integrating eGaN FETs

Best design practices utilize the advantages offered by eGaN FETs, including printed circuit board (PCB) layout and thermal management. As GaN transistor switching charges continue to decrease, system parasitics must also be reduced to achieve maximum switching speeds and minimize parasitic ringing typical of power converters.

Power Electronics
Read article

閱讀全文
分類: 技術文章

IEEE電力電子學會(PELS)線上研討會: “充分發揮採用晶片級封裝的氮化鎵電晶體及積體電路的優勢”

IEEE電力電子學會(PELS)線上研討會: “充分發揮採用晶片級封裝的氮化鎵電晶體及積體電路的優勢”

IEEE電力電子學會( PELS)將於2016年11月3日(星期四)舉行線上研討會,屆時將由Alex Lidow及Michael de Rooij主講並與參加者分享採用晶片級封裝的氮化鎵功率元件的設計及PCB製造方法。

氮化鎵技術領袖宜普電源轉換公司(EPC)的專家將於美國東部夏令時間(EDT)11月3日(星期四)早上11時至中午12時於IEEE電力電子學會( PELS)線上研討會中與工程師分享如何設計及使用氮化鎵電晶體。

閱讀全文
分類: 新聞稿

Thoughtful Board Design Unlocks the Promise of GaN

Thoughtful Board Design Unlocks the Promise of GaN

Power transistors with faster switching speeds will enable power supplies with smaller form factors and higher energy transfer efficiencies. Indeed, the elimination of heat sinks will give designers the ability to visualize entirely new form factors for power bricks and modules, including those enabling wireless power transfers. Gallium-nitride (GaN) transistors fabricated on silicon substrates can boost efficiencies and help shrink the footprint of power supplies.

Electronic Design
March, 2016
Read article

閱讀全文
分類: 技術文章

Radiated EMI Filter Design for an eGaN FET Based ZVS Class D Amplifier in 6.78MHz Wireless Power Transfer

Radiated EMI Filter Design for an eGaN FET Based ZVS Class D Amplifier in 6.78MHz Wireless Power Transfer

In this installment, we present a method to design a suitable EMI filter that can reduce unwanted frequencies to levels within radiated EMI specifications, and do this without negatively impacting the performance of the wireless power coil. In addition, the overall radiated EMI design aspects will also be covered.

EEWeb - Wireless & RF Magazine
Michael de Rooij, Ph.D.
February, 1, 2016
Read article

閱讀全文
分類: 技術文章

Getting from 48 V to load voltage

Getting from 48 V to load voltage

Improving low-voltage DC/DC converter performance with GaN transistors:
The emergence of commercially available and cost-effective gallium nitride (GaN) power transistors begins a new age in power electronics. There are significant benefits in using enhancement-mode gallium nitride FET (eGaN FET) devices in power converters for existing data center and telecommunications architectures centering around an input voltage of 48 VDC with load voltages as low as 1 VDC. High-performance GaN power transistors can enable new approaches to power data center and telecommunications systems with higher efficiency and higher power density than possible with previous Si MOSFET based architectures.

Power Systems Design
David Reusch, Ph.D., and John Glaser, Ph.D.
January, 25, 2016
Read article

閱讀全文
分類: 技術文章

How to get 500W in an eighth-brick converter with GaN, part 1

How to get 500W in an eighth-brick converter with GaN, part 1

DC-DC “brick” converters are familiar to many engineers, and have wide usage in telecommunications, networking, data centers, and many other applications. This is due in large part to adoption of a common footprint defined by the Distributed-power Open Standards Alliance (DOSA) and generally accepted input/output voltage ranges. These converters provide isolation and voltage step-down, and have become increasingly sophisticated, with features that enable advanced system optimization and control.

EDN Network
November 23, 2015
By: John Glaser
Read article

閱讀全文
分類: 技術文章

宜普電源轉換公司(EPC)出版關於如何發揮氮化鎵電晶體優勢的實用指南--《DC/DC轉換手册》

宜普電源轉換公司(EPC)出版關於如何發揮氮化鎵電晶體優勢的實用指南--《DC/DC轉換手册》

宜普公司的《DC/DC轉換手册》與工程師分享如何在數據通訊設備及其他功率轉換應用中利用氮化鎵(GaN)功率電晶體提高效率及功率密度。

現今世界對訊息的需求史無前例地快速增長,而社會對通訊、計算及下載技術的渴求進一步驅使我們對訊息的需求量上升。新興技術諸如雲端運算及物聯網的出現,加上全球每分鐘估計有高達300小時的錄像被上載至YouTube平臺,可見要求更多、更快速的信息存取的趨勢不會慢下來。這個挑戰推動了我們編撰這本實用工程知識手册--《DC/DC轉換 -《氮化鎵電晶體—高效功率轉換元件》的增刊 》

本書闡述功率轉換系統如何持續改善,從而跟上正在快速提升的運算能力的發展步伐,以及應對社會對高效數據中心的需求。此外,本書的焦點是如何發揮高效氮化鎵技術並逐步分析如何利用氮化鎵元件設計出高效的功率轉換解決方案。該分析對用於功率轉換系統中的傳統先進矽功率電晶體和氮化鎵電晶體進行比較。

閱讀全文
分類: 新聞稿

Practical Layout Techniques to Fully Extract the Benefits of eGaN FETs

Practical Layout Techniques to Fully Extract the Benefits of eGaN FETs

The trend for electronics is to continually push towards miniaturization while increasing performance. With silicon MOSFET technology fast approaching its theoretical limit, enhancement mode gallium nitride (eGaN®) FETs from EPC have emerged to offer a step change improvement in power FET switching performance, enabling next generation power density possibilities by decreasing size and boosting efficiency. This article will explore the recommended layout techniques required to fully extract the benefits of EPC’s eGaN FETs.

By: Ivan Chan & David Reusch, Ph.D.
EEWeb –Modern Printed Circuits
August, 2015
Read Article

閱讀全文
分類: 技術文章
RSS