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GaN Is Revolutionizing Motor Drive Applications

GaN Is Revolutionizing Motor Drive Applications

In last month’s Safety & Compliance column in How2Power, “WBG Semiconductors Pose Safety And EMI Challenges In Motor Drive Applications,”[1]Kevin Parmenter made some assertions about the difficulties of using SiC, and to a lesser extent GaN, power semiconductors in large motor-drive applications. This commentary is a response to that article, showing that GaN can be a game changer in low-voltage integrated motors.

How2Power
February, 2021
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GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller

GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller

The combination of the Renesas dual synchronous GaN buck controller and ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enables high power density and efficiency with the same BOM size and cost as silicon.

EL SEGUNDO, Calif.—  February, 2021 — EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from EPC to achieve greater than 95% efficiency for 48 V input to 12 V regulated output conversion at 25 A.  

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GaN Reliability Testing Beyond AEC for Automotive Lidar

GaN Reliability Testing Beyond AEC for Automotive Lidar

An automotive application using GaN power devices in high volume is lidar(light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discus a novel testing mechanism developed by EPC to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

Power Systems Design
December, 2020
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Efficient Power Conversion (EPC) and BrightLoop Converters Combine Design Expertise to Produce Smaller, Lighter Converters for Performance eMotorsport Vehicles

Efficient Power Conversion (EPC) and BrightLoop Converters Combine Design Expertise to Produce Smaller, Lighter Converters for Performance eMotorsport Vehicles

EL SEGUNDO, Calif. — December 2020 — BrightLoop Converters has greatly reduced the size, cost and improved reliability of its latest BB SP DC-DC buck converters thanks to Efficient Power Conversion Corporation’s (EPC) EPC2029 enhancement-mode gallium nitride (eGaN®) FET transistors. By switching from silicon (Si) transistors to gallium nitride (GaN), BrightLoop was able to increase the switching frequency of their design from 200 kHz to 600 kHz, while keeping the same efficiency. This design change increased the power density of the solution by a factor of approximately two and this resulted in lower cost by enabling the implementation of a smaller enclosure.

EPC’s EPC2029 is an 80 V, 48 A eGaN® FET featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

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採用氮化鎵技術的功率轉換應用

採用氮化鎵技術的功率轉換應用

氮化鎵(GaN)技術已實現重大改進,而且它極具成本效益,可以替代MOSFET元件。 從2017年開始,採用氮化鎵元件的48 V DC/D轉換器開始成為市場上重要的應用。 各種拓撲諸如多相和多級降壓轉換器,實現具備更高效率的全新解決方案,可以滿足IT和汽車市場的能源需求。

Power Electronics News
2020年11月
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GaN ePower™ Ultrafast Switch with Integrated Gate Driver for Indirect Time-of-Flight Laser Drivers

GaN ePower™ Ultrafast Switch with Integrated Gate Driver for Indirect Time-of-Flight Laser Drivers

Gallium nitride FETs have continued to gain traction in many power electronic applications, but GaN technology is still in the early part of its life cycle. While there is much room to improve basic FET performance figures of merit an even more promising avenue is the development of GaN power ICs.

Bodo’s Power Systems
November, 2020
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面向快速發展的關鍵應用的GaN HEMT,它的性能優於MOSFET

面向快速發展的關鍵應用的GaN HEMT,它的性能優於MOSFET

矽功率MOSFET未能跟上電力電子行業的發展變化,而效率、功率密度和更小的外型尺寸等因素是行業的主要需求。 矽MOSFET元件的性能已達到其理論極限,並且由於電路板的空間非常寶貴,因此功率系統設計人員必需找出替代方案。 氮化鎵(GaN)元件是一種高電子遷移率電晶體(HEMT),這種半導體正為新興應用不斷增值。

EETimes
2020年8月
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GaN Reliability Testing Beyond AEC Proves Robustness for Automotive Lidar Applications

GaN Reliability Testing Beyond AEC Proves Robustness for Automotive Lidar Applications

Gallium nitride (GaN) power devices have been in volume production since March 2010 and have established a remarkable field-reliability record. An automotive application using GaN power devices in high volume is lidar (light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discuss a novel testing mechanism developed by Efficient Power Conversion (EPC) to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

eeNews Europe
July 30, 2020
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Power Product News from ‘Virtual APEC’

Power Product News from ‘Virtual APEC’

Starting on page 13 of this story, EPC discusses with David Morrison the latest GaN developments meant for APEC. Alex Lidow, CEO and co-founder of EPC, discussed his company’s new power stage ICs, their development of GaN-based reference designs using a multi-level topology and various demos that were originally bound for APEC.

How2Power Today
April, 2020
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學習利用氮化鎵(GaN)技術設計最先進的人工智慧、機械人、無人機、 自動駕駛車輛及高音質音訊系統

學習利用氮化鎵(GaN)技術設計最先進的人工智慧、機械人、無人機、 自動駕駛車輛及高音質音訊系統

EPC公司進一步更新了其廣受歡迎的教育視頻播客系列,上載了6個影片,針對元件可靠性及基於氮化鎵場效應電晶體及積體電路的各種先進應用,包括面向人工智慧的高功率密度運算應用,面向機械人、無人機及車載應用的雷射雷達系統,以及D類放音訊放大器。

宜普電源轉換公司(EPC)更新了其廣受歡迎的“如何使用氮化鎵元件”的影片播客系列。剛剛上載的六個影片主要分享實用範例,目的是幫助設計師利用氮化鎵技術設計面向人工智慧伺服器及超薄筆記型電腦的先進DC/DC轉換器、面向機械人、無人機及自動駕駛車輛的雷射雷達系統,以及實現有可能是具有最高音質的音訊系統

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氮化鎵與48 V應用 – 目前的發展及何去何從?

氮化鎵與48 V應用 – 目前的發展及何去何從?

中壓氮化鎵場效應電晶體(eGaN FET)的成本在三年前已經比等效額定功率MOSFET器件的成本更低。當時,EPC公司決心利用氮化鎵場效應電晶體的性能及成本效益優勢,積極研發及支持48 V輸入或輸出的應用。車用及電腦應用的48 V 轉換逐漸成為全新的架構,也成為了功率系統的全新標準。

Power Systems Design
2020年3月31日
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氮化鎵(GaN)技術的最新發展是什麼?

氮化鎵(GaN)技術的最新發展是什麼?

知名企業領袖 - 宜普電源轉換公司(EPC)首席執行官Alex Lidow於2009年在市場推出第一個氮化鎵電晶體。 經過了10年的氮化鎵產品銷售,DESIGN & ELEKTRONIK 雜誌編輯Ralf Higgelke與Alex會面並談論氮化鎵技術的最新發展。

DESIGN & ELEKTRONIK雜誌
2020年2月20日
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宜普電源轉換公司(EPC)推出基於車規級氮化鎵(eGaN )技術的飛行時間(ToF)演示板,可在高達28 A並具1.2納秒脈寬的脈衝電流驅動雷射

宜普電源轉換公司(EPC)推出基於車規級氮化鎵(eGaN )技術的飛行時間(ToF)演示板,可在高達28 A並具1.2納秒脈寬的脈衝電流驅動雷射

EPC9144演示板內的車規級EPC2216氮化鎵場效應電晶體(eGaN® FET)可支援大電流納秒脈衝的應用,提供高速的大電流脈衝 – 電流可高達28 A、脈寬则可低至1.2納秒,從而使得飛行時間及flash雷射雷達系統更準確、更精確及更快速。

宜普電源轉換公司(EPC)宣佈推出15 V、28 A大電流脈衝雷射二極體驅動電路板(EPC9144)。

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採用GaN技術的電源轉換

採用GaN技術的電源轉換

當矽技術已經到了性能極限,採用氮化鎵元件的全新設計使得氮化鎵技術得以繼續普及。氮化鎵元件的發展還是剛剛起步,它的性能將得以繼續提升、積體電路也將會更具優勢,以及將有更多全新的氮化鎵產品推出市場。

Electronics Weekly
2019年12月
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Go-ahead for GaN

Go-ahead for GaN

It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow. There are many reasons to use GaN-on-Si power transistors such as eGaN FETs, in telecoms, vehicles, healthcare and computing. Smaller, faster, lower cost, and more integrated, GaN-on-Si devices have spent a decade gaining the confidence and trust of designers across the spectrum of power conversion applications.

Electronic Specifier
November 20, 2019
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Executive Interview with Alex Lidow on Winning GaN Applications

Executive Interview with Alex Lidow on Winning GaN Applications

Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Alex Lidow’s thoughts on where the GaN market is now and where he sees the potential applications for the future. Dr. Lidow is the CEO and Co-founder of Efficient Power Conversion (EPC).

Bodo’s Power Systems
November, 2019
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功率半導體戰爭開始了

功率半導體戰爭開始了

氮化鎵(GaN)及碳化矽(SiC)元件的價格下調,對客戶而言,更為吸引。多家供應商推出基於氮化鎵及碳化矽的功率半導體,摩拳擦掌,正在爆發新一輪的半導體大戰,全速進攻傳統矽基元件的市場份額。

Semiconductor Engineering
2019年10月
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