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面向快速發展的關鍵應用的GaN HEMT,它的性能優於MOSFET

面向快速發展的關鍵應用的GaN HEMT,它的性能優於MOSFET

矽功率MOSFET未能跟上電力電子行業的發展變化,而效率、功率密度和更小的外型尺寸等因素是行業的主要需求。 矽MOSFET元件的性能已達到其理論極限,並且由於電路板的空間非常寶貴,因此功率系統設計人員必需找出替代方案。 氮化鎵(GaN)元件是一種高電子遷移率電晶體(HEMT),這種半導體正為新興應用不斷增值。

EETimes
2020年8月
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分類: 技術文章

面向宇航應用的氮化鎵電晶體

面向宇航應用的氮化鎵電晶體

氮化鎵功率電晶體是面向嚴苛航太任務的功率和射頻應用的理想元件。 通過全新基於eGaN®元件的解決方案,EPC Space公司提供專門為商業衛星關鍵應用而設計的氮化鎵元件,可確保元件的耐輻射性能和對單粒子效應的免疫能力。 這些元件具有極高的電子遷移率、低溫度系數和非常低的導通阻抗。

EETimes
2020年7月
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分類: 技術文章

EPC和VPT宣佈成立合資公司EPC Space 針對關鍵任務應用的抗輻射功率電子市場

EPC和VPT宣佈成立合資公司EPC Space 針對關鍵任務應用的抗輻射功率電子市場

針對關鍵航太應用及其他高可靠性應用環境,合資公司EPC Space為客戶提供先進、高可靠性的氮化鎵功率轉換解決方案,從而確保更可靠的操作和任務成功。

宜普電源轉換公司(EPC)與VPT公司(海科航空公司旗下公司、NYSE交易代號為HEI.A及HEI)宣佈成立合資公司EPC Space LLC,針對衛星及高可靠性應用,從事設計和製造抗輻射、採用封裝、通過測試和經認證合格的矽基氮化鎵電晶體和積體電路。

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GaN in Space

GaN in Space

This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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GaN Powers Small Satellites

GaN Powers Small Satellites

Small satellites bring a more cost-effective approach to low-Earth-orbit (LEO) missions, helping to deliver low-cost internet access across the globe. For this application, GaN FETs partnered with a radiation tolerant pulse width modulation controller and GaN fet driver allow more efficient switching, higher frequency operation, reduced gate drive voltage and smaller solution sizes compared to the traditional silicon counterparts.

Electronics Weekly
July, 2019
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分類: 技術文章

Intersil採用氮化鎵電源轉換積體電路,進一步擴大其業界領先、面向衛星應用的耐輻射產品系列

Intersil採用氮化鎵電源轉換積體電路,進一步擴大其業界領先、面向衛星應用的耐輻射產品系列

美國加州MILPITAS - 2016年5月 25日美通社專訊 --佔領電源管理和精確模擬解決方案的市場領導地位的Intersil Corporation (納斯達克指數NASDAQ代號: ISIL) 宣佈計劃進一步擴大其業界領先、面向衛星應用的耐輻射產品系列,在衛星及其他惡劣環境採用具備高可靠性的氮化鎵(GaN)電源轉換積體電路。

美通社
2016年5月25日
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分類: 技術文章

Freebird Semiconductor Partners with EPC for Development of Radiation Hardened Gallium Nitride Power Conversion Systems for Satellite and Harsh Environment Applications

Freebird Semiconductor Partners with EPC for Development of Radiation Hardened Gallium Nitride Power Conversion Systems for Satellite and Harsh Environment Applications

Freebird Semiconductor and Efficient Power Conversion (EPC) have entered into an agreement whereby Freebird will develop products for use in high reliability space and harsh environment applications based upon eGaN® power transistors and integrated circuits.

NORTH ANDOVER, MA. — April 2016 — Freebird Semiconductor Corporation, North Andover, Massachusetts announces the signing of an agreement with Efficient Power Conversion Corporation (EPC), the leading provider of enhancement-mode gallium nitride power transistors to develop products for use in high reliability, space, and harsh environment applications based upon EPC’s eGaN® technology.

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