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客戶可以在我們的網頁 註冊 ,定期收取最新消息包括全新產品發佈、應用文章及更多其它資訊。如果你錯過了已發佈的消息,你可瀏覽以下的文檔。

Digi-Key Electronics Partners with Efficient Power Conversion (EPC) to Host eGaN Motor Drive Webinar

Digi-Key Electronics Partners with Efficient Power Conversion (EPC) to Host eGaN Motor Drive Webinar

THIEF RIVER FALLS, Minnesota, USA – Digi-Key Electronics, the leading global electronic components distributor, announced that it has partnered with Efficient Power Conversion Corporation (EPC) to host a webinar on how to harness the power of eGaN FETS and ICs for motor drives. The webinar will take place on October 28 at 8 a.m. PST.

Register for the Harness the Power of GaN for Smaller, Lighter, More Precise Motor Drives webinar at EPC’s webinar page

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Gallium Nitride Integration: Breaking Down Technical Barriers Quickly

Gallium Nitride Integration: Breaking Down Technical Barriers Quickly

An integrated circuit made using GaN-on-Si substrates has been in production for over five years. The ultimate goal is to achieve a single component IC that merely requires a simple digital input from a microcontroller and produces a power output that drives a load efficiently, reliably under all conditions, in the smallest space possible, and economically. Discrete power transistors, whether silicon-based or GaN-on-Si, are entering their final chapter. Integrated GaN-on-Si can offer higher performance in a smaller footprint with significantly reduced engineering required.

IEEE Power Electronics Magazine
March 2020
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宜普電源轉換公司(EPC)推出ePower 功率級積體電路系列,重新定義功率轉換

宜普電源轉換公司(EPC)推出ePower 功率級積體電路系列,重新定義功率轉換

宜普電源轉換公司(EPC)推出全新積體電路(IC)系列的首個產品,為高功率密度應用諸如DC/DC轉換、電機驅動及D類放大器,提供更高性能及更小型化的解決方案。

宜普電源轉換公司(EPC)宣佈推出80 V、12.5 A的功率級積體電路,專為48 V DC/DC轉換而設計,用於具有高功率密度的運算應用及針對電動車的電機驅動器。

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採用與氮化鎵場效應電晶體匹配的驅動器積體電路可以提升低壓負載點轉換器的性能

採用與氮化鎵場效應電晶體匹配的驅動器積體電路可以提升低壓負載點轉換器的性能

本文闡析面向12 V輸入電壓轉到1 V輸出電壓的負載點轉換器,如果採用與氮化鎵場效應電晶體匹配的驅動器,可以顯著提升性能。從文章中展示的uPI1966D設計範例可以看到,EPC公司的不對稱氮化鎵半橋場效應電晶體EPC2100與uPI半導體公司的雙通道同步驅動器積體電路是非常匹配的。

How2Power Today
2019年12月
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jjPlus Showcasing Next Generation Wireless Power and WiFi Solutions at Computex 2019

jjPlus Showcasing Next Generation Wireless Power and WiFi Solutions at Computex 2019

Unleash the full potential of your solutions with jjPlus wireless technologies!

TAIPEI, Taiwan, May 21, 2019 — jjPLus Corp. a Taiwan design manufacturer of high quality wireless communications and wireless power embedded solutions, will showcase the next generation Wireless Power Transfer as well as new WiFi solutions at COMPUTEX 2019 in Nangang Exhibition Center, Hall 1, at K1024 booth during May 28 - June 1 in Taipei, Taiwan..

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The Growing Ecosystem for eGaN FET Power Conversion

The Growing Ecosystem for eGaN FET Power Conversion

In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
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宜普電源轉換公司(EPC)的專家攜手與工程師發揮氮化鎵元件及積體電路的最高性能,不僅替代MOSFET元件,更為市場帶來創新設計

宜普電源轉換公司(EPC)的專家攜手與工程師發揮氮化鎵元件及積體電路的最高性能,不僅替代MOSFET元件,更為市場帶來創新設計

EPC公司在3月14至16日於中國深圳及上海各大論壇及展會亮相,展示氮化鎵技術的卓越性能如何為整個半導體業界帶來全新電源轉換設計思路,包括無線充電、DC/DC、雷射雷達及汽車等應用領域。

EPC公司的管理及技術團隊在中國深圳及上海於3月14至16日舉行的各大業界論壇及展會上,與工程師會面並作技術交流。EPC團隊分享了如何發揮氮化鎵場效應電晶體(GaN FET)及積體電路的最高性能、創新設計,從而為工程師及其客戶,打造共創共贏新局面。

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EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost

EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost

EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size.

EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and are available in low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die.

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GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.

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Why experts believe cheaper, better lidar is right around the corner

Why experts believe cheaper, better lidar is right around the corner

This article takes a deep dive into lidar technology. It explains how the technology works and the challenges technologists face as they try to build lidar sensors that meet the demanding requirements for commercial self-driving cars.

The bottom line is that while bringing lidar costs down will take a significant amount of difficult engineering work, there don't seem to be any fundamental barriers to bringing the cost of high-quality lidar down below $1,000—and eventually below $100. That means the technology—and ultimately, self-driving vehicles that depend on lidar—should be well within reach for ordinary consumers.

Ars Techinca
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eGaN技術的可靠性及元件失效的物理原因 – 閘極電壓應力測試

eGaN技術的可靠性及元件失效的物理原因 – 閘極電壓應力測試

本系列的第四章中,我們探討了採用晶圓級晶片尺寸封裝的eGaN元件的熱機械可靠性。同樣重要的是,我們需要瞭解有閘極偏置時,元件有可能發生的故障模式。本章探討氮化鎵(GaN)場效應電晶體的閘極在偏置電壓時失效的物理原因。我們把eGaN FET的閘極控制電壓提升至特定的最大極限值和極限值以上,從而分析該元件在失效前的性能。

Planet Analog
Chris Jakubiec
2016年11月29日
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部落格(4):eGaN技術的可靠性及元件失效的物理原因

部落格(4):eGaN技術的可靠性及元件失效的物理原因

在本系列的第一、二及第三章中,我們詳細講解了關於EPC增強型氮化鎵場效應電晶體(eGaN FET)及積體電路(IC)的現場可靠性及它們被認證通過應力測試。在應用中,我們把元件置於預期的工作條件下並施加應力,其測試結果引證了氮化鎵元件的現場可靠性。同樣重要的是明白eGaN元件固有的物理特性,它如何在被施加應力後並超出預期工作條件時(例如數據表的參數及安全工作區(SOA))而失效。本章將進一步深入探討失效的物理原因 -- 採用晶圓級晶片尺寸封裝(WLCSP)的eGaN元件的熱機械可靠性。

Planet Analog
Chris Jakubiec
2016年9月7日
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部落格(3):eGaN技術的可靠性及元件失效的物理原因

部落格(3):eGaN技術的可靠性及元件失效的物理原因

在本系列的第一及第二章,我們詳細講解了關於EPC的增強型氮化鎵場效應電晶體(eGaN®FET)及積體電路(IC)的現場可靠性報告。具備優越的現場可靠性的eGaN元件展示出通過基於應力的認證測試可確保客戶的應用也可以非常可靠。本章將闡釋EPC元件在認證之前被置於及通過的各種應力測試。

Planet Analog
Chris Jakubiec
2016年7月9日
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eGaN技術的可靠性及元件失效的物理原因–確證eGaN FET的現場可靠性

eGaN技術的可靠性及元件失效的物理原因–確證eGaN FET的現場可靠性

宜普電源轉換公司(EPC)的增強型氮化鎵場效應電晶體(eGaN® FET)及積體電路正在驅動最終用戶應用的發展,包括LiDAR、無線充電、DC/DC電源轉換、射頻發射基站、衛星系統及音訊放大器等應用。

從現場可靠性數據可以確證eGaN® FET及積體電路於客戶應用的品質。在本章節,我們分享eGaN® FET的可靠性及現場數據的概述,包括在過去六年間我們對量產及已經付運的eGaN產品所收集的可靠性現場數據,以及分析超過170億小時受測元件的現場數據。最後所得的FIT比率(109小時內發生失效的元件)大約是0.24,這是目前最好的現場可靠性測試結果。

Plant Analog
作者:Chris Jakubiec
2016年5月1 日
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