Manufacturers of GaN power semiconductors showcased their latest products, from 100 V to 650-V devices at PCIM Europe. PCIM Europe showcased several presentations about the benefits and use cases of wide bandgap (WGG) semiconductors, including gallium nitride (GaN) and silicon carbide (SiC). Several manufacturers, including EPC, GaN Systems, Infineon, Nexperia, and STMicroelectronics announced several new families of GaN power semiconductors during the week.

Electronic Products
May, 2021
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Efficient Power Conversion (EPC) will showcase the company’s latest enhancement-mode gallium nitride-based FETs and ICs demonstrating how GaN technology’s superior performance is transforming power delivery for automotive, computing, and robotics at the PCIM Europe 2021 Digital Days.

EL SEGUNDO, Calif.— April 2021 — The EPC team will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3 – 7. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN^® technology.

氮化鎵電晶體和積體電路通過消除輸入濾波器中的電解電容，以提高馬達控制應用的功率密度。氮化鎵元件的卓越開關性能可消除死區時間且實現無與倫比的正弦電壓和電流波形，從而實現更平滑且沒有雜訊的操作。

Bodo’s Power Systems
2021年4月
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Efficient Power Conversion (EPC) announces that the EPC2152 ePower™ Stage IC has received the 2020 Elektra Award for Semiconductor Product of the Year (Analogue).

EL SEGUNDO, Calif.— March 2021 — EPC’s ePower™ stage, EPC2152 Integrated Circuit (IC), has been honored with an Elektra Award 2020 in the Semiconductor Product of the Year – Analogue category. The award presentation was announced on March 25^th during a virtual awards ceremony hosted by Electronics Weekly. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation, and contribution to the global electronics industry. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.

氮化鎵技術發展迅速，在開發出多代全新離散元件後，具備更高效、更小尺寸和成本更低等優勢的新世代積體電路繼續崛起。氮化鎵積體電路讓產品可以更小型化、開關更快、更高效且更易於設計。

Power Systems Design
2021年3月 (第36-39頁)
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Gallium nitride (GaN) power devices have been in production for over 10 years and, beyond just performance and cost improvements, the most significant opportunity for GaN technology to impact the power conversion market comes from the intrinsic ability to integrate multiple devices on the same substrate. This capability will allow monolithic power systems to be designed on a single chip in a more straightforward, higher efficiency, and more cost-effective way.

Power Electronic News
March, 2021
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New family of laser driver IC products will enable faster adoption and increased ubiquity of ToF solutions across a wider array of end-user applications.

How2Power
March, 2021
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宜普電源轉換公司（EPC）推出氮化鎵（GaN）積體電路（IC）系列，實現性能更高、更小巧且採用飛行時間（ToF）技術的光達應用，包括機器人、無人機、3D感測器和自動駕駛車輛等應用。

宜普電源轉換公司（EPC）宣佈推出雷射驅動器IC(EPC21601)，在單個晶片上集成了40 V、10 A 場效應電晶體、閘極驅動器和3.3 V邏輯電平輸入，面向採用飛時測距（ToF）技術的光達系統，用於機器人、監控保安系統、無人機、全自動駕駛車輛和吸塵器。

EPC’s ePower™ Stage EPC2152 Integrated Circuit has been selected as a finalist in the Semiconductor Product of the Year – Analogue category, in this year’s Elektra Awards.  These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation and contribution to the global electronics industry.

Companies are invited to enter individual categories and must demonstrate how innovative their product is, how it addresses its intended application better than incumbent products and what additional applications or markets could be opened-up.  Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.  Due to the current COVID restrictions the Elektra Awards ceremony this year will be held virtually on 25th March and the winners announced during the event.

THIEF RIVER FALLS, Minnesota, USA – Digi-Key Electronics, the leading global electronic components distributor, announced that it has partnered with Efficient Power Conversion Corporation (EPC) to host a webinar on how to harness the power of eGaN FETS and ICs for motor drives. The webinar will take place on October 28 at 8 a.m. PST.

Register for the Harness the Power of GaN for Smaller, Lighter, More Precise Motor Drives webinar at EPC’s webinar page

An integrated circuit made using GaN-on-Si substrates has been in production for over five years. The ultimate goal is to achieve a single component IC that merely requires a simple digital input from a microcontroller and produces a power output that drives a load efficiently, reliably under all conditions, in the smallest space possible, and economically. Discrete power transistors, whether silicon-based or GaN-on-Si, are entering their final chapter. Integrated GaN-on-Si can offer higher performance in a smaller footprint with significantly reduced engineering required.

IEEE Power Electronics Magazine
March 2020
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宜普電源轉換公司（EPC）推出全新積體電路(IC)系列的首個產品，為高功率密度應用諸如DC/DC轉換、電機驅動及D類放大器，提供更高性能及更小型化的解決方案。

宜普電源轉換公司（EPC）宣佈推出80 V、12.5 A的功率級積體電路，專為48 V DC/DC轉換而設計，用於具有高功率密度的運算應用及針對電動車的電機驅動器。

本文闡析面向12 V輸入電壓轉到1 V輸出電壓的負載點轉換器，如果採用與氮化鎵場效應電晶體匹配的驅動器，可以顯著提升性能。從文章中展示的uPI1966D設計範例可以看到，EPC公司的不對稱氮化鎵半橋場效應電晶體EPC2100與uPI半導體公司的雙通道同步驅動器積體電路是非常匹配的。

How2Power Today
2019年12月
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Unleash the full potential of your solutions with jjPlus wireless technologies!

TAIPEI, Taiwan, May 21, 2019 — jjPLus Corp. a Taiwan design manufacturer of high quality wireless communications and wireless power embedded solutions, will showcase the next generation Wireless Power Transfer as well as new WiFi solutions at COMPUTEX 2019 in Nangang Exhibition Center, Hall 1, at K1024 booth during May 28 - June 1 in Taipei, Taiwan..

宜普電源轉換公司的基於氮化鎵的元件乃前沿技術。在本影片，宜普公司的首席執行長Alex Lidow於APEC展會現場與 Alix Paultre分享多個design in項目，從而展示基於氮化鎵的元件的各種優勢。

Embedded Computer Design
觀看影片

宜普電源轉換公司首席執行長兼共同創辦人Alex Lidow於APEC 2019展覽會的Ridley Engineering展覽攤位進行演講，題目是“矽已經死亡”。

觀看影片

In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
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EPC公司在3月14至16日於中國深圳及上海各大論壇及展會亮相，展示氮化鎵技術的卓越性能如何為整個半導體業界帶來全新電源轉換設計思路，包括無線充電、DC/DC、雷射雷達及汽車等應用領域。

EPC公司的管理及技術團隊在中國深圳及上海於3月14至16日舉行的各大業界論壇及展會上，與工程師會面並作技術交流。EPC團隊分享了如何發揮氮化鎵場效應電晶體（GaN FET）及積體電路的最高性能、創新設計，從而為工程師及其客戶，打造共創共贏新局面。

EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size.

EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN^® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and are available in low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die.

Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN^® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.