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GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller

GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller

The combination of the Renesas dual synchronous GaN buck controller and ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enables high power density and efficiency with the same BOM size and cost as silicon.

EL SEGUNDO, Calif.—  February, 2021 — EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from EPC to achieve greater than 95% efficiency for 48 V input to 12 V regulated output conversion at 25 A.  

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氮化鎵與48 V應用 – 目前的發展及何去何從?

氮化鎵與48 V應用 – 目前的發展及何去何從?

中壓氮化鎵場效應電晶體(eGaN FET)的成本在三年前已經比等效額定功率MOSFET器件的成本更低。當時,EPC公司決心利用氮化鎵場效應電晶體的性能及成本效益優勢,積極研發及支持48 V輸入或輸出的應用。車用及電腦應用的48 V 轉換逐漸成為全新的架構,也成為了功率系統的全新標準。

Power Systems Design
2020年3月31日
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分類: 技術文章

EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package.  These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.

EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

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