新聞

客戶可以在我們的網頁 註冊 ,定期收取最新消息包括全新產品發佈、應用文章及更多其它資訊。如果你錯過了已發佈的消息,你可瀏覽以下的文檔。

GaN Reliability Testing Beyond AEC Proves Robustness for Automotive Lidar Applications

GaN Reliability Testing Beyond AEC Proves Robustness for Automotive Lidar Applications

Gallium nitride (GaN) power devices have been in volume production since March 2010 and have established a remarkable field-reliability record. An automotive application using GaN power devices in high volume is lidar (light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discuss a novel testing mechanism developed by Efficient Power Conversion (EPC) to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

eeNews Europe
July 30, 2020
Read article

閱讀全文
分類: 技術文章

宜普電源轉換公司(EPC)發佈第十一階段可靠性測試報告 - 從失效性測試看到氮化鎵器件的穩定性比矽功率MOSFET器件更具優勢

宜普電源轉換公司(EPC)發佈第十一階段可靠性測試報告 -  從失效性測試看到氮化鎵器件的穩定性比矽功率MOSFET器件更具優勢

第一至第十階段可靠性測試報告後,EPC公司的第十一階段可靠性測試報告進一步豐富知識庫。此報告對受測元件進行超過1230億元件-小時應力測試,並且展示氮化鎵元件的穩定性是矽功率元件所不能實現的。

EPC公司發佈第十一階段可靠性測試報告,與工程師分享受測元件如何實現優越的現場可靠性的策略 - 在廣闊測試條件下,採用失效性測試元件(test-to-fail)的反覆測試方法,從而知道如何構建更穩固的產品以達到應用所需,例如面向全自動駕駛車輛的雷射雷達LTE通信基站、汽車的車頭燈及衛星等應用。

閱讀全文
分類: 新聞稿

測試氮化鎵元件在何時開始失效

測試氮化鎵元件在何時開始失效

從2010年3月起,氮化鎵(GaN)功率元件已經實現高可靠性並進行量產。本章詳細闡析如何測試出元件在何時開始失效,從而瞭解數據手冊給出的元件工作條件,距離其工作極限值還有多少餘量。而最重要的是,找出元件固有的失效機理,瞭解其失效的根本原因、恒常操作情況、溫度、電氣應力或機械應力等,從而知道產品在一般工作條件下,它的安全使用壽命。

Power Systems Design
2020年3月
閱讀全文

閱讀全文
分類: 技術文章

Evaluation of measurement techniques for high speed GaN transistors

Evaluation of measurement techniques for high speed GaN transistors

The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture important details of high-speed waveforms. This article focuses on how to leverage the measurement equipment for the user’s requirement and measurement techniques to accurately evaluate high performance GaN transistors. The article also evaluates high bandwidth differential probes for use with non-ground-referenced waveforms.

EDN Network
By Suvankar Biswas , David Reusch & Michael de Rooij
Read article

閱讀全文
分類: 技術文章
RSS