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The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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氮化鎵的強大推動力及演進 - 第四章:eGaN FET和積體電路為手術用的機械人帶來精准的控制

氮化鎵的強大推動力及演進 - 第四章:eGaN FET和積體電路為手術用的機械人帶來精准的控制

本章討論由於低壓矽基氮化鎵(GaN)元件具備超快速的開關速度,因此實現了很多全新應用的出現。這些應用推動了行業的改革,例如面向全自動駕駛車輛的雷射雷達(lidar)、面向5G通信應用的波峰追蹤,以及家用和用於辦公室的大面積無線電源技術。此外,我們會探討氮化鎵功率元件如何為手術用的機械人帶來精准的控制,從而推動了醫療行業的最新發展。

Power Systems Design
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