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It's Time to Rethink Power Semiconductor Packaging

It's Time to Rethink Power Semiconductor Packaging

When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

1. Can you make the package smaller?
2. Can you reduce the package inductance?
3. Can you make the product with lower conduction losses?
4. Can you make the package more thermally efficient?
5. Can you sell the product at a lower price?
6. Can you make the package more reliable?

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Powering graphics processors from a 48-V bus

Powering graphics processors from a 48-V bus

New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 VIN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions.

Power Electronic Tips
March, 2019
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分類: 技術文章

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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分類: 技術文章

GaN 的功率和演變- 第5部分:採用eGaN FET和積體電路構建低成本、高效的12 V - 1 V 負載點轉換器

GaN 的功率和演變- 第5部分:採用eGaN FET和積體電路構建低成本、高效的12 V - 1 V 負載點轉換器

氮化鎵元件對提升主流應用的效率的貢獻很大,例如在傳統矽基12 V - 1 V負載點 DC/DC轉換器。基於eGaN積體電路的12 V轉到1 V、12 A負載轉換器在5 MHz的頻率下,可以實現78%峰值效率及1000 W/in3 功率密度,而成本則低於每瓦0.2美元。

Power Systems Design
2019年1月
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分類: 技術文章

氮化鎵的強大推動力及演進 - 第四章:eGaN FET和積體電路為手術用的機械人帶來精准的控制

氮化鎵的強大推動力及演進 - 第四章:eGaN FET和積體電路為手術用的機械人帶來精准的控制

本章討論由於低壓矽基氮化鎵(GaN)元件具備超快速的開關速度,因此實現了很多全新應用的出現。這些應用推動了行業的改革,例如面向全自動駕駛車輛的雷射雷達(lidar)、面向5G通信應用的波峰追蹤,以及家用和用於辦公室的大面積無線電源技術。此外,我們會探討氮化鎵功率元件如何為手術用的機械人帶來精准的控制,從而推動了醫療行業的最新發展。

Power Systems Design
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