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宜普電源轉換公司(EPC)於半導體展與工程師會面、釋放創新力量

宜普電源轉換公司(EPC)於半導體展與工程師會面、釋放創新力量

針對DC/DC、雷射雷達(LiDAR)、無線電源及其他很多應用的客戶群正在不斷地擴大,宜普電源轉換公司(EPC)繼續其創新之路,在2019年3月及4月裡,於全球著名展覽會與設計工程師會面並答疑解難,旨在幫助工程師發揮氮化鎵技術的優勢,攜手打造共創共贏的局面。

宜普電源轉換公司(EPC)的專家於全球展覽會與設計工程師會面,希望加深與氮化鎵技術相關的知識交流,使得工程師可以利用基於氮化鎵元件的解決方案,創新新一代的設計。

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Powering graphics processors from a 48-V bus

Powering graphics processors from a 48-V bus

New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 VIN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions.

Power Electronic Tips
March, 2019
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分類: 技術文章

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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分類: 技術文章

GaN 的功率和演變- 第5部分:採用eGaN FET和積體電路構建低成本、高效的12 V - 1 V 負載點轉換器

GaN 的功率和演變- 第5部分:採用eGaN FET和積體電路構建低成本、高效的12 V - 1 V 負載點轉換器

氮化鎵元件對提升主流應用的效率的貢獻很大,例如在傳統矽基12 V - 1 V負載點 DC/DC轉換器。基於eGaN積體電路的12 V轉到1 V、12 A負載轉換器在5 MHz的頻率下,可以實現78%峰值效率及1000 W/in3 功率密度,而成本則低於每瓦0.2美元。

Power Systems Design
2019年1月
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分類: 技術文章
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