新聞

客戶可以在我們的網頁 註冊 ,定期收取最新消息包括全新產品發佈、應用文章及更多其它資訊。如果你錯過了已發佈的消息,你可瀏覽以下的文檔。

EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2219, 65 V gallium nitride transistor with integrated reverse gate clamp diode optimized for high resolution lidar systems.

EL SEGUNDO, Calif.— March 2021 — EPC announces successful AEC Q101 qualification of the 65 V EPC2219 designed for lidar systems in the automotive industry and other harsh environments. 

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氮化鎵的雷霆威力及演變

氮化鎵的雷霆威力及演變

從2010年開始,自矽基氮化鎵(GaN)電晶體商用化後,低壓氮化鎵電晶體推動了很多全新應用的發展。氮化鎵元件具備超快速開關,推動全新市場諸如雷射雷達、波峰追蹤及無線電源市場的出現。這些全新應用進一步實現更強大的供應鏈、低製造成本及元件前所未有的高可靠性。這些優勢使得比較保守的設計工程師在DC/DC轉換器、AC/DC轉換器及車載等各種應用開始對氮化鎵元件進行評估。在本文章系列,我們將討論多種發揮氮化鎵元件優勢的應用,實現最終產品差異化的競爭優勢。首先,我們會探討是甚麼因素加快了氮化鎵元件的普及。

Power Systems Design
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宜普電源轉換公司(EPC)推出比等效MOSFET小型化8倍的 40 V氮化鎵功率電晶體

宜普電源轉換公司(EPC)推出比等效MOSFET小型化8倍的 40 V氮化鎵功率電晶體

宜普公司為功率系統設計師提供比等效MOSFET小型化8倍的40 V、5 mΩ氮化鎵功率電晶體(EPC2049),應用於負載點(POL)轉換器、雷射雷達(LiDAR)及具低電感的馬達驅動器。

宜普電源轉換公司(EPC)宣佈推出EPC2049功率電晶體,應用於負載點(POL)轉換器雷射雷達(LiDAR)波峰追蹤電源D類音頻放大器及具低電感的馬達驅動器。 EPC2049電晶體的額定電壓為40 V、最大導通阻抗為5 mΩ及脈衝輸出電流為175 A。

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EPC推出影片系列《GaN如何改變我們的生活方式》

EPC推出影片系列《GaN如何改變我們的生活方式》

宜普電源轉換公司(EPC)與工程師分享經過專業製作的6個影片,展示出在最終用戶端的應用,例如無線充電桌面、高性能雷射雷達、48 V–1.8 V DC/DC單級轉換,以及利用氮化鎵電晶體及積體電路實現準確控制的馬達驅動器等應用。

宜普電源轉換公司(www.epc-co.com.tw)製作了6個精簡影片,展示出在最終用戶端採用eGaN® FET及積體電路的應用。這些影片描述氮化鎵技術正在改變我們的生活方式,並挑戰功率系統設計工程師如何在他們新一代的功率系統設計中,發揮高效氮化鎵場效應電晶體及積體電路的優勢。

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宜普電源轉換公司(EPC)宣佈位於美國維吉尼亞州Blacksburg的eGaN FET及 IC應用中心落成啟用並聘任Suvankar Biswas博士為高級應用工程師

宜普電源轉換公司(EPC)宣佈位於美國維吉尼亞州Blacksburg的eGaN FET及 IC應用中心落成啟用並聘任Suvankar Biswas博士為高級應用工程師

為了進一步擴大eGaN FET及IC的應用範圍、加大研發力度及幫助客戶使用eGaN®FET及IC並對元件進行評估,宜普公司宣佈Blacksburg應用中心落成啟用及聘任Suvankar Biswas博士為高級應用工程師。

宜普電源轉換公司(EPC)宣佈位於美國維吉尼亞州(Virginia)的Blacksburg應用中心落成。該中心進一步支持增強型氮化鎵電晶體及積體電路的研發及應用,從而擴大潛在市場的覆蓋率。除了基於傳統的場效應電晶體及積體電路的功率轉換應用外,氮化鎵技術推動新興應用的出現,包括無線電源傳輸、應用於全自動駕駛車的雷射雷達技術及支援4G和5G通訊標準的 波峰追蹤應用。

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採用eGaN FET設計的波峰追蹤電源支援20 MHz LTE頻寬

採用eGaN FET設計的波峰追蹤電源支援20 MHz LTE頻寬

本篇文章闡述面向使用第四代移動通信技術(4G)LTE頻寬的無線通訊基站基礎設施並採用EPC8004高頻氮化鎵場效應電晶體設計的波峰追蹤電源。基於eGaN® FET並採用四相位拓撲的軟開關降壓轉換器可以準確地跟蹤峰均比(PAPR)為7 dB的20 MHz LTE包絡信號,提供60 W以上的平均負載功率,而總效率可高達92%。這種設計的可擴展性能可以支援不同的功率級別,工程師只需選擇不同的EPC場效應電晶體設計不同的系統,從而可以滿足不同功率級別的要求。

Bodo’s Power Systems
張遠哲博士及 Michael de Rooij博士
2016年3月
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標籤: 波峰追蹤

IEEE Power Electronics Society (PELS) Webinar, “Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters”

On September 3rd IEEE PELS will offer a webinar by Dr. Johan Strydom discussing the contribution of gallium nitride power transistors to meet the demanding system bandwidth requirements of envelope tracking applications.

EL SEGUNDO, Calif.— August 2014 — An Efficient Power Conversion Corporation (EPC) expert on the application of gallium nitride transistors in envelope tracking power circuit design will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on September 3rd from 11:00 AM to 12:00 AM (EDT).

Discrete GaN power devices offer superior hard-switching performance over MOSFETs and are crucial for the development of switching converters for envelope tracking. In this seminar, the latest family of high frequency enhancement-mode gallium nitride power transistors on silicon (eGaN® FETs) will be presented in a few multi-megahertz buck converters. The different system-level parasitics will be discussed and their impact evaluated based upon the experimental results.

The presenter will be Johan Strydom, EPC Vice President of Applications Engineering. Dr. Strydom is widely published in the industry, including being co-author of GaN Transistors for Efficient Power Conversion, the first textbook on the design and applications of gallium nitride transistors.

Webinar Registration Information:

Title: Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters
Date: Wednesday, September 3, 2014
Time: 11:00 AM – 12:00 AM (EDT)
Registration:http://www.ieee-pels.org/products/pels-upcoming-webinars/2483-ieee-pels-webinar-series-using-egan-fets-for-envelope-tracking-buck-converters-by-johan-strydom
Fee: Free of Charge

About IEEE Power Electronics Society (PELS)

The Power Electronics Society is one of the fastest growing technical societies of the Institute of Electrical and Electronics Engineers (IEEE). For over 20 years, PELS has facilitated and guided the development and innovation in power electronics technology. This technology encompasses the effective use of electronic components, the application of circuit theory and design techniques, and the development of analytical tools toward efficient conversion, control and condition of electric power.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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宜普電源轉換公司將在2014年APEC®研討會分享支持高頻諧振轉換器及波峰追蹤供電的氮化鎵(GaN)技術

於2014年IEEE的APEC功率電力電子業界研討會中,宜普電源轉換公司的應用技術專家將分享氮化鎵場效應電晶體技術如何于應用中比矽功率MOSFET器件優勝。

矽基增強型功率氮化鎵場效應電晶體之全球領導廠商宜普電源轉換公司將於2014年APEC技術研討會以應用為主題進行三場技術演講,與參與者分享高頻諧振轉換器及高頻、硬開關功率轉換器設計。研討會將於3月16日至20日在德克薩斯州的Fort Worth舉行。

首屈一指的APEC研討會以功率電子業務的實用及應用方面為主題,深受功率電子業界專業人員愛戴,討論的範圍涵蓋使用、設計、製造及推廣所有種類的功率電子元件及設備,詳情請訪問 http://www.apec-conf.org/

宜普電源轉換公司共同創辦人及首席執行長Alex Lidow博士稱「我們非常榮幸得到APEC2014年技術覆核委員會選出EPC專家的技術文章,於APEC的年度研討會發表,這是支持我們相信功率系統工程師對高性能氮化鎵技術感到興趣並獲得他們的贊同。」

EPC專家以GaN FET技術為題的演講:

與會的工程師如果想與我們的應用專家會面,請發要求會面的郵件至 [email protected]與我們聯繫。

宜普電源轉換公司簡介

宜普公司是基於增強型氮化鎵的功率管理器件的領先供應商,為首家公司推出替代功率MOSFET器件的矽基增強型氮化鎵(eGaN)場效應電晶體,其目標應用包括 直流-直流轉換器無線電源傳送波峰追蹤、射頻傳送、太陽能微型逆變器、 光學遙感技術(LiDAR)D類音訊放大器 等應用,器件性能比最好的矽功率MOSFET高出很多倍。詳情請流覽我們的網站www.epc-co.com.tw 。

客戶可以在我們的網頁註冊(http://bit.ly/EPCupdates),定期收取EPC公司的最新產品資訊,也可以在Twitter網頁(http://twitter.com/#!/EPC_CORP)及面書(http://www.facebook.com/EPC.Corporation)與我們聯繫或給我們一個“讃”!

商標

eGaN® 是Efficient Power Conversion Corporation宜普電源轉換公司的註冊商標。

媒體聯絡人

Winnie Wong ([email protected])

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Efficient Power Conversion Corporation (EPC) Expands High Frequency eGaN® Power Transistor Family Capable of Amplification into the Multiple GHz Range

EPC8010 100 V gallium nitride FET is optimized for high frequency applications with positive gain into the 3 GHz range.

EL SEGUNDO, Calif. – January 2014 – Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS. Optimized for high speed switching, the EPC8010 has a maximum RDS(on) of 160 milliohms and input gate charge in the hundreds of pico-coulombs.

This device has switching transition speeds in the sub nano-second range, making it uniquely capable of hard-switching applications above 10 MHz. Even beyond the 10MHz for which they were designed, this product exhibits very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications.

Applications benefiting from the low power, compact, high frequency EPC8010 include hard-switching power converters operating in the multi-megahertz range for envelope tracking, RF power amplifiers, and highly resonant wireless power transfer systems for wireless charging of mobile devices.

“The EPC8010 is an excellent addition to our family of ultra high-speed eGaN FETs. It takes EPC and gallium nitride transistor technology to a level of performance that enables applications beyond the capability of the aging MOSFET. These eGaN FETs can be used in both power switching and RF applications,” noted Alex Lidow, co-founder and CEO.

Additionally, an EPC9030 development board featuring two EPC8010 devices in a half-bridge configuration with minimum switching frequency of 500 kHz is available now. The purpose of this development board is to simplify the evaluation process of the EPC8010, providing a single board that can be easily connected into any existing converter.

Evaluation units of the EPC8010 are immediately available in 2- and 10-piece packs starting at $40 through Digi-Key Corporation at http://bit.ly/EPC8010DK

The EPC9030 development board is available now for $150 through Digi-Key Corporation at http://bit.ly/EPC9030DK

Design Information and Support for eGaN FETs:

 

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as

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GaN — Still Crushing Silicon One Application at a Time

Enhancement-mode gallium nitride transistors have been commercially available for over four years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. There are many benefits derived from the latest generation eGaN® FETs in new emerging applications such as highly resonant wireless power transfer, RF envelope tracking, and class-D audio. This article will examine the rapidly evolving trend of conversion from power MOSFETs to gallium nitride transistors in these new applications.

Power Pulse
By: Alex Lidow
February, 2014

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Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Darnell’s Energy Summit

EPC CEO and applications experts will conduct a half-day seminar and technical presentations including an invited plenary session presentation on GaN FET technology and applications.

EL SEGUNDO, Calif. — August, 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting an educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2013. The conference will be held in Dallas, Texas from September 9th through the 12th.

This summit combines efficient power conversion, green building design and smart grid electronics into a single conference. The presentations will focus on advanced power conversion technologies needed for the successful development of next-generation power systems. It is a solutions-oriented event, with a strong emphasis on practical advances in power electronics and energy efficiency.

“It is noteworthy that the Darnell Energy Summit has selected EPC experts to conduct an educational seminar and to give technical papers focusing on GaN technology at their conference. This selection continues to demonstrate the superior performance of GaN technology has gained the interest and acceptance of those interested in improving energy efficiency,” said Alex Lidow, EPC’s co-founder and CEO.

Educational Seminar: GaN Transistors for Efficient Power Conversion
Presenter: Alex Lidow and David Reusch
Monday, September 9th (9:00 a.m. – 12:30 p.m.)

Expanding on the GaN FET technology textbook written by EPC, this seminar will explain how GaN High Electron Mobility Transistors (HEMT) work. This session will also discuss how to use these devices including showing the drivers, layout, and thermal considerations for high performance and high frequency power conversion. To showcase the real-world value of GaN technology, several applications including efficient DC-DC conversion, high frequency envelope tracking, and wireless power transfer will be presented. The seminar will conclude with a look at future of this emerging displacement technology.

Technical Presentations by EPC Experts Featuring GaN FETs:

• Plenary Session 
“GaN: Crushing Silicon One Application at a Time”
Presenter: Alex Lidow
​Tuesday, September 10th (Session 2.1, 1:45 p.m.)

• Technical Sessions 
“eGaN®FETs for High Frequency Hard-Switching Converters”
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eGaN®FET與矽功率器件比拼第八章:波峰追蹤的應用

作者:宜普公司產品應用副總裁Johan Strydom博士
日期:在2012年4月30日刊載於Power Electronics Technology 雜誌

在射頻功率放大器的波峰追蹤不是新技術。但隨著社會對電源產業日益增長的需求如增長手機的電池壽命、提高基站的能效及增加高成本的射頻傳輸器的輸出功率,通過波峰追蹤來提高射頻功率放大器系統的效率已經成為科研的一個重要議題。

我們在這篇文章展示了在大功率輸出的波峰追蹤應用中的降壓轉換器,如何使用eGaN FET實現功率及效率方面可達到的成效。

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