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面向多種功率應用的氮化鎵電晶體

面向多種功率應用的氮化鎵電晶體

矽功率MOSFE追不上目前功率電子業界的演進步伐 -- 業界需要具備高效、高功率密度及細小的外型尺寸的元件。業界看到矽MOSFET已經達到它的理論極限,從而需要找出全新元件。氮化鎵(GaN)是一種HEMT元件,具備附加增值的優勢,被證明為可以支持全新應用的要求。

Power Electronics News
2020年3月25日
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分類: 技術文章

Thermal design for a high density GaN-based power stage

Thermal design for a high density GaN-based power stage

eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

EDN
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分類: 技術文章

The Growing Ecosystem for eGaN FET Power Conversion

The Growing Ecosystem for eGaN FET Power Conversion

In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
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分類: 技術文章

一位科學家的自述:曾為世界節省15%的電量,如今找到矽的替代物

一位科學家的自述:曾為世界節省15%的電量,如今找到矽的替代物

這位在40年前成為博士的科學家曾為世界節省了15%電量,如今他正繼續自己的創新之旅,為人類找到了矽的全新替代材料。

我父親常常教導我:一個人的真正價值,是通過他對社會所作出的貢獻來衡量的。 1975年我進入研究生院學習,那時我的興趣在半導體領域,並且認為我對社會最大的貢獻,就是找到可以替代矽的半導體材料。我的研究生畢業課題從圍繞砷化鎵展開,但是直到在1977年獲得博士學位後,我才發現,作為一種半導體材料,砷化鎵受其基本材料特性所影響,它的應用前景非常有限,於是我轉而專注於研究如何製造出更好的矽基器件。

財富中文網 (Fortune China)
2017年6月15日
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分類: 技術文章

如何測量世界上速度最快的電源開關

氮化鎵(GaN)場效應電晶體隨時準備在電壓調節器及直流-直流電源應用替代矽功率元件。 與矽MOSFET元件相比,氮化鎵電晶體的開關速度快很多及具有更低的導通電阻(RDS(on)),從而可以實現具有更高功效的功率電源,對我們來說是好的。如果你正在使用氮化鎵元件設計功率電路,你必需理解元件的開關速度。

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分類: 技術文章

Gallium nitride based devices set to bring substantial boost to power efficiency

Gallium nitride has long been known to have useful properties when it comes to electronic components. Even so, its application has largely been confined to more exotic areas of the industry, particularly rf transistors.

But GaN is beginning to find application in what could be considered the mainstream, with some of its proponents suggesting its arrival could mark the beginning of the end for the traditional power mosfet.

By: Graham Pitcher
New Electronics
December 13, 2011
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