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採用與氮化鎵場效應電晶體匹配的驅動器積體電路可以提升低壓負載點轉換器的性能

採用與氮化鎵場效應電晶體匹配的驅動器積體電路可以提升低壓負載點轉換器的性能

本文闡析面向12 V輸入電壓轉到1 V輸出電壓的負載點轉換器,如果採用與氮化鎵場效應電晶體匹配的驅動器,可以顯著提升性能。從文章中展示的uPI1966D設計範例可以看到,EPC公司的不對稱氮化鎵半橋場效應電晶體EPC2100與uPI半導體公司的雙通道同步驅動器積體電路是非常匹配的。

How2Power Today
2019年12月
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分類: 技術文章

GaN 的功率和演變- 第5部分:採用eGaN FET和積體電路構建低成本、高效的12 V - 1 V 負載點轉換器

GaN 的功率和演變- 第5部分:採用eGaN FET和積體電路構建低成本、高效的12 V - 1 V 負載點轉換器

氮化鎵元件對提升主流應用的效率的貢獻很大,例如在傳統矽基12 V - 1 V負載點 DC/DC轉換器。基於eGaN積體電路的12 V轉到1 V、12 A負載轉換器在5 MHz的頻率下,可以實現78%峰值效率及1000 W/in3 功率密度,而成本則低於每瓦0.2美元。

Power Systems Design
2019年1月
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分類: 技術文章

宜普電源轉換公司(EPC)推出比等效MOSFET小型化8倍的 40 V氮化鎵功率電晶體

宜普電源轉換公司(EPC)推出比等效MOSFET小型化8倍的 40 V氮化鎵功率電晶體

宜普公司為功率系統設計師提供比等效MOSFET小型化8倍的40 V、5 mΩ氮化鎵功率電晶體(EPC2049),應用於負載點(POL)轉換器、雷射雷達(LiDAR)及具低電感的馬達驅動器。

宜普電源轉換公司(EPC)宣佈推出EPC2049功率電晶體,應用於負載點(POL)轉換器雷射雷達(LiDAR)波峰追蹤電源D類音頻放大器及具低電感的馬達驅動器。 EPC2049電晶體的額定電壓為40 V、最大導通阻抗為5 mΩ及脈衝輸出電流為175 A。

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EPC eGaN技術在性能及成本上實現質的飛躍

EPC eGaN技術在性能及成本上實現質的飛躍

EPC公司宣佈推出EPC2045及EPC2047氮化鎵場效應電晶體(eGaN®FET),對比前一代的產品,這些電晶體的尺寸減半,而且性能顯著提升。

全球增强型氮化鎵電晶體領袖廠商、致力於開發創新的矽基功率場效應電晶體(eGaN FET)及積體電路的宜普電源轉換公司(EPC)宣佈推出全新的EPC2045 (7 mΩ、100 V)及EPC2047(10 mΩ、200 V)電晶體,在提升產品性能的同時也可以降低成本。100 V的EPC2045應用於開放式服務器架構以實現48 V至負載的單級電源轉換、負載點(POL)轉換器、USB-C及 雷射雷達(LiDAR)等應用。200 V的EPC2047的應用例子包括無綫充電、多級AC/DC電源供電、機械人應用及太陽能微型逆變器

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Highlights from APEC 2016 – GaN, 48V POL, wireless charging and more!

Highlights from APEC 2016 – GaN, 48V POL, wireless charging and more!

Emerging applications such as 48V-to-point-of-load (POL), wireless power and USB Type-C had a lot of interest. Google joined the Open Compute Project a few weeks ago and proposed a computer server-rack architecture based on a 48V power-distribution bus to improve overall system efficiency. While the 48V bus has been around for a long time, the push (and challenge) is for high-efficiency 48V-to-POL voltage regulators. EPC showcased TI’s 48V-to-1V EVM which uses the LMG5200 GaN module (driver and FETs), announced at APEC last year, and a new TI analog controller (TPS53632G).

TI E2E Community
Pradeep Shenoy
Mar 28, 2016
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分類: 技術文章

Getting from 48 V to load voltage

Getting from 48 V to load voltage

Improving low-voltage DC/DC converter performance with GaN transistors:
The emergence of commercially available and cost-effective gallium nitride (GaN) power transistors begins a new age in power electronics. There are significant benefits in using enhancement-mode gallium nitride FET (eGaN FET) devices in power converters for existing data center and telecommunications architectures centering around an input voltage of 48 VDC with load voltages as low as 1 VDC. High-performance GaN power transistors can enable new approaches to power data center and telecommunications systems with higher efficiency and higher power density than possible with previous Si MOSFET based architectures.

Power Systems Design
David Reusch, Ph.D., and John Glaser, Ph.D.
January, 25, 2016
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The eGaN FET-Silicon Power Shoot-Out: Part 2 – Drivers, Layout

eGaN FETs differ from silicon MOSFETs in part because of their significantly faster switching speeds. In the second article of this series, we explore the different requirements for gate drive, layout, and thermal management.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
January 1, 2011

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High Step-Down Ratio Buck Converters With eGaN Devices

The intermediate bus architecture (IBA) is currently the most popular power system architecture in computing and telecommunications equipment. It typically consists of a +48 V system power distribution bus that feeds on-board bus converters, which in turn supply power to nonisolated, dc-dc converters. These nonisolated converters generate the low supply voltages required to power the various logic circuits. Because of their proximity to the circuits they power, these converters are commonly referred to as point-of-load converters (POLs).

By Johan Strydom, EPC, El Segundo, Calif. and Bob White, Embedded Power Labs, Highlands Ranch, Colo.
How2Power
November, 2010

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