宜普電源轉換公司(EPC) 擴展了其封裝兼容的ePower™ IC系列，提高功率密度和簡化設計以滿足DC/DC應用、馬達控制器和D類音頻放大器的不同功率要求。

繼早前推出的100 V、35 A功率級IC（EPC23102）之後，EPC公司新推兩款100V功率級IC，其額定電流分別為15 A(EPC23104)和25 A(EPC23103)。

With Electronic Power Steering (EPS), the hydraulic system is replaced with an electric motor that aids the driver only when needed. Its digital assistance control can be modified online to adapt to driving conditions. There are, however, several design constraints to consider. One is that the driver does not want to lack the haptic feedback from the tires, especially when a vehicle is large, such as a truck. Other constraints are determined by safety regulations, particularly for automatic guided vehicles. These constraints require adopting an efficient, accurate and redundant system. Gallium nitride technology helps the designers in all these areas.

Power Electronics News
March, 2023
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EL SEGUNDO, Calif.—  March 2023 – Efficient Power Conversion (EPC), the world’s leader in enhancement-mode gallium nitride FETs and ICs, has teamed up with SHARGE Technology (SHARGE) to design a 67 W USB PD charger with a power display screen. The Retro 67 fast charger uses EPC’s 100 V GaN FET, EPC2218, which can deliver 231 A pulsed current in a tiny footprint of 3.5 mm x 1.95 mm offering designers a significantly smaller, more efficient device than silicon MOSFET for USB PD fast chargers.

EPC2218 provides SHARGE’s All-GaN fast charger with higher efficiency, state-of-the-art power density and lower system cost.

Since the launch of GaN-on-Si enhancement mode power transistors in March 2010 there has been a slow but monotonic shift towards adoption and replacement of silicon-based power MOSFETs. Initial adoption came from risk-taker visionaries in applications such as lidar, high-end audio amplifiers, robots, vehicle headlamps, and high-performance DC-DC converters. For the expansion of GaN for power conversion to get beyond the early adopters, a more user-friendly format than the WLCP needed to be developed. This format, however, needed to preserve the key attributes of small size, low RDS(on), high speed, excellent thermal conductivity, and low cost. In other words, the best package would be the least amount of package technically possible. Enter the PQFN…

Bodo’s Power Systems
March, 2023
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With the increase in government mandates to combat climate change, automakers are moving quickly to leverage new technology to respond by switching from the internal combustion engine to electric-drive vehicles. This article presents the design of a 2 kW, two-phase 48 V/12 V bi-directional converter using GaN FETs that achieves 96% efficiency and is targeted for the 48 V mild hybrid system.

PSD North America
March, 2023
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EPC的GaN專家將在其APEC展位展示各種應用所採用的最新一代GaN FET 和 IC。

宜普電源轉換公司(EPC)是增强型氮化鎵FET和IC領域的全球領導者，將於3月19日至23日在奧蘭多舉行的IEEE APEC 2023會議上發表多項技術演講，詳情請參閱下方時間表。此外，我們還會在奧蘭治縣會議中心的732號展位展示最新一代的 eGaN^®FET和IC，其應用範圍包括高功率密度計算、電動汽車、機器人、太陽能、電池充電等。歡迎蒞臨參觀“GaN之牆”,我們提供市場上最廣泛的氮化鎵功率半導體產品組合，可現成交付。

EPC推出EPC9177，這是一種基於eGaN^®IC的高功率密度、薄型DC/DC轉換器參考設計，可滿足新型USB PD 3.1對多端口充電器和主板上從28V~48V輸入電壓轉換至12 V或20 V輸出電壓的嚴格要求。

宜普電源轉換公司(EPC)宣佈推出EPC9177，這是一款數位控制、單輸出同步降壓轉換器参考設計，工作在 720 kHz開關頻率，可轉換 48 V、36 V、28 V至稳壓12 V 輸出電壓，並提供可高達20 A的連續輸出電流。

Five times smaller than an equivalent silicon MOSFET and twice as powerful as the previous generation of eGaN devices is the new sixth generation of devices introduced by Efficient Power Conversion (EPC). We asked CEO Alex Lidow in the video.

Electroniknet.de
November 29, 2022
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宜普電源轉換公司(EPC)推出200 V、10 mΩ的EPC2307，完善了額定電壓為 100 V、150 V和200 V的6個GaN電晶體系列，提供更高的性能、更小的解決方案和易於設計的DC/DC轉換、AC/DC SMPS和充電器、太陽能優化器和微型逆變器，以及馬達控制器。

全球增强型氮化鎵FET和IC領導者EPC推出 200 V、10 mΩ的EPC2307，採用耐熱增强型QFN封裝，佔位面積僅為3 mm x 5 mm。

An exploration of a GaN-based design of a 2 kW 48V/12V bi-directional power module for 48 V mild hybrid electric vehicles.

Electronics Today
January, 2023
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This panel discussion from Electronica 2022 discusses the benefits and challenges for SiC and GaN in multiple application contexts, as well as the last barriers to overcome for widespread adoption, such as large-volume capabilities and prices.

Power Electronic News
January, 2023
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EPC推出80 V、通過AEC-Q101 認證的氮化鎵場效應電晶體（GaN FET）EPC2252，為設計人員提供比矽MOSFET更小和更高效的解決方案，用於車規級光達、48 V/12 V DC/DC轉換和低電感馬達控制器。

作為增强型氮化鎵 (eGaN^®)FET和IC的全球領導者，宜普電源轉換公司（EPC）進一步擴大已有現貨供應的車規級氮化鎵電晶體系列，推出80 V、11 mΩ、在 1.5 mm x 1.5 mm封裝內提供75 A脉衝電流的EPC2252，比矽MOSFET更小和更高效，適用於自動駕駛和其他先進駕駛輔助系統應用中的車規級光達、48 V/12 V DC/DC轉換和低電感馬達控制器。

Aiming at laser time-of-flight lidar, Efficient Power Conversion (EPC) has introduced an 80V 15A pulse laser driver IC.

Electronics Weekly
January, 2023
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宜普電源轉換公司(EPC)推出新型氮化鎵積體電路EPC21701，這是一款 80 V雷射驅動器IC，可提供15 A脉衝電流，適用於飛行時間(ToF)光達應用，包括真空吸塵器、機器人、3D安全攝像頭和 3D感測器。

EPC 宣佈推出EPC21701，這是一款單晶片雷射驅動器，包含80 V、40 A FET、閘極驅動器和3.3邏輯電平輸入，用於飛行時間光達系統，包括用於機器人、監控系統和真空吸塵器。 它專為用於手勢識別、飛行時間 (ToF)測量、機器人視覺或工業安全的光達系統量身定制。

宜普電源轉換公司（EPC）和立錡科技（Richtek）携手推出新型快充參考設計，使用RT6190降壓-升壓控制器和氮化鎵場效應電晶體EPC2204，可實現超過98%的效率。

宜普電源轉換公司和立錡科技宣佈推出4開關雙向降壓-升壓控制器參考設計，可將12 V~24 V的輸入電壓轉換爲5 V~20 V的穩壓輸出電壓，並提供高達5 A的連續電流和6.5 A的最大電流。與高功率密度應用的傳統解決方案相比，新型RT6190控制器與EPC的超高效氮化鎵場效應電晶體EPC2204相結合，使得解決方案尺寸可縮小20%以上，而且在20 V和12 V輸出電壓下，可實現超過98%的效率。在不需使用散熱器和5 A連續電流下，20 V轉5 V的最大升溫低於攝氏15度，而12 V轉20 V的最高升溫則低於·攝氏55度。

Richtek, the global leading analog IC design company has teamed up with EPC, the leading provider of gallium nitride (GaN)-based power management technology to launch a new reference design for fast charging applications, achieving high power density and up to 98% efficiency.

DigiTimes
January, 2023
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Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

Despite the continued progress in traditional transistor scaling, the semiconductor industry has reached an inflection point. The demand for faster, smaller, smarter, and more energy-efficient chips calls for new design and manufacturing paradigms. This eBook includes contributions from technology and market experts Malcolm Penn, Future Horizons; Tim Burgess and Bernd Westhoff, Renesas Electronics; Jean-Christophe Eloy, Yole Group; Luc Van den hove, imec; Ezgi Dogmus, Poshun Chiu, and Taha Ayari, Yole Intelligence; Alex Lidow, Efficient Power Conversion; Victor Veliadis, PowerAmerica; Richard Collins and Yu-Han Chang, IDTechEx; and Jean-René Lèquepeys, CEA-Leti.

EETimes
December, 2022
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Growing computational power and miniaturization of electronics in computing and data centers is increasingly putting pressure on 48-V power delivery and conversion systems. High-efficiency and high-power–density converters enable a reduction in power losses at the system level while allowing smaller form factors. In this context, LLC resonant topologies combined with GaN technology succeed to deliver outstanding performance, as it has been demonstrated with multiple examples. This article will show the key design parameters and components to achieve beyond 4 kW/in3 of power density in a 48-V to 12-V LLC converter using eGaN^® FETs.

Power Electronics News
December, 2022
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