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How to GaN: Generation 4 eGaN FETs – Widening the Performance Gap with the Aging MOSFET

分類: Articles

In this installment of the ‘How to GaN’ series we will discuss a new family of eGaN FETs that is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOFET in high frequency power conversion.

EEWeb
By: Alex Lidow
October, 2014