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Discovering GaN for Power Design in Space — An Interview with Alex Lidow

分類: Interviews
Discovering GaN for Power Design in Space — An Interview with Alex Lidow

Unlike silicon, whereby specific manufacturing processes and packaging are required to insulate semiconductors from the effects of radiation, GaN devices are largely resistant to the damage caused by space radiation due to their physical characteristics and structure. In an interview with Alex Lidow, CEO at EPC, Power Electronic News have discovered the features of GaN for space applications.

Power Electronics News
September, 2021
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